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Title: Nanocrystalline Tetragonal Tantalum Thin Films

 [1];  [1];  [1];  [2];  [2]
  1. University of Tennessee, Knoxville (UTK)
  2. ORNL
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Shared Research Equipment Collaborative Research Center
Sponsoring Org.:
USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE Office of Science (SC)
OSTI Identifier:
DOE Contract Number:
Resource Type:
Journal Article
Resource Relation:
Journal Name: Scripta Materialia; Journal Volume: 57; Journal Issue: 57
Country of Publication:
United States

Citation Formats

Zhang, M., Zhang, Y. F., Rack, P. D., Miller, Michael K, and Nieh, Tai-Gang. Nanocrystalline Tetragonal Tantalum Thin Films. United States: N. p., 2007. Web. doi:10.1016/j.scriptamat.2007.07.041.
Zhang, M., Zhang, Y. F., Rack, P. D., Miller, Michael K, & Nieh, Tai-Gang. Nanocrystalline Tetragonal Tantalum Thin Films. United States. doi:10.1016/j.scriptamat.2007.07.041.
Zhang, M., Zhang, Y. F., Rack, P. D., Miller, Michael K, and Nieh, Tai-Gang. Mon . "Nanocrystalline Tetragonal Tantalum Thin Films". United States. doi:10.1016/j.scriptamat.2007.07.041.
title = {Nanocrystalline Tetragonal Tantalum Thin Films},
author = {Zhang, M. and Zhang, Y. F. and Rack, P. D. and Miller, Michael K and Nieh, Tai-Gang},
abstractNote = {},
doi = {10.1016/j.scriptamat.2007.07.041},
journal = {Scripta Materialia},
number = 57,
volume = 57,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2007},
month = {Mon Jan 01 00:00:00 EST 2007}
  • Nanocrystalline tantalum thin film was prepared by radio frequency magnetron sputtering on a glass substrate. Structure and mechanical properties of the as-deposited thin film were investigated by X-ray diffraction, transmission electron microscopy, and nanoindentation. The salient feature in the present tantalum thin film with a grain size of 76.5 nm is the remarkable enhancement of hardness, about one order of magnitude higher than that of bulk coarse-grained tantalum.
  • Nanocrystalline vanadium dioxide (VO{sub 2}) thin films were prepared on glass substrates at different deposition temperatures by oxidizing sputtered vanadium films. Atomic force microscope, x-ray diffraction, and Raman scattering were employed to characterize the films. It was confirmed that low deposition temperature resulted in improving oxygen atom diffusion and VO{sub 2} nanograin growth in the thermal oxidation process. Investigation of the electrical properties revealed that the amplitude of semiconductor-metal transition and transition temperature decreased, whereas the Hall mobility and carrier concentration increased as the deposition temperature elevated. Optical investigations were carried out in the ultraviolet-visible-near-infrared region. Narrow optical band gapsmore » were observed in these films.« less
  • We have fabricated thin films of La{sub 1{minus}{ital x}}Ca{sub {ital x}}MnO{sub {delta}} with tetragonal symmetry. For low temperatures and magnetic fields the measured magnetoresistance is anisotropic: initially positive for applied magnetic field perpendicular to the film plane and negative for field applied parallel to the film plane. At high temperatures the magnetoresistance is negative for all fields and field orientations. We also observe an in-plane magnetoresistance anisotropy with an angular dependence corresponding to that observed in transition metal ferromagnets. We suggest an interpretation requiring a substantial spin-orbit interaction in the material. {copyright} {ital 1996 American Institute of Physics.}