Novel High Efficiency Photovoltaic Devices Based on the III-N Material System: Final Technical Report, 7 December 2005 - 29 August 2008
The research shows that InGaN material system can be used to realize high-efficiency solar cells, making contributions to growth, modeling, understanding of loss mechanisms, and process optimization.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC36-99-GO10337
- OSTI ID:
- 940680
- Report Number(s):
- NREL/SR-520-44186; XEJ-6-55157-01; TRN: US200824%%292
- Resource Relation:
- Related Information: Work performed by the University of Delaware, Newark, Delaware
- Country of Publication:
- United States
- Language:
- English
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