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Title: Carrier Concentration Tuning of Bandgap-Reduced p-Type ZnO Films by Co-Doping of Cu and Ga for Improving Photoelectrochemical Response

Abstract

In this study, the synthesis of p-type ZnO films with similar bandgaps but varying carrier concentrations through codoping of Cu and Ga is reported. The ZnO:(Cu,Ga) films are synthesized by rf magnetron sputtering in O{sub 2} gas ambient at room temperature, followed by postdeposition annealing at 500 C in air for 2 h. The bandgap reduction and p-type conductivity are caused by the incorporation of Cu. The tuning of carrier concentration is realized by varying the Ga concentration. The carrier concentration tuning does not significantly change the bandgap and crystallinity. However, it can optimize the carrier concentration to significantly enhance the photoelectrochemical response for bandgap-reduced p-type ZnO thin films.

Authors:
; ; ; ; ; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
940666
DOE Contract Number:  
AC36-99-GO10337
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 103; Journal Issue: 7, 2008; Related Information: Article No. 073504; Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; AIR; ANNEALING; MAGNETRONS; SPUTTERING; SYNTHESIS; THIN FILMS; TUNING; Solar Energy - Photovoltaics

Citation Formats

Shet, S, Ahn, K -S, Yan, Y, Deutsch, T, Chrustowski, K M, Turner, J, Al-Jassim, M, and Nuggehalli, R. Carrier Concentration Tuning of Bandgap-Reduced p-Type ZnO Films by Co-Doping of Cu and Ga for Improving Photoelectrochemical Response. United States: N. p., 2008. Web. doi:10.1063/1.2888578.
Shet, S, Ahn, K -S, Yan, Y, Deutsch, T, Chrustowski, K M, Turner, J, Al-Jassim, M, & Nuggehalli, R. Carrier Concentration Tuning of Bandgap-Reduced p-Type ZnO Films by Co-Doping of Cu and Ga for Improving Photoelectrochemical Response. United States. https://doi.org/10.1063/1.2888578
Shet, S, Ahn, K -S, Yan, Y, Deutsch, T, Chrustowski, K M, Turner, J, Al-Jassim, M, and Nuggehalli, R. Tue . "Carrier Concentration Tuning of Bandgap-Reduced p-Type ZnO Films by Co-Doping of Cu and Ga for Improving Photoelectrochemical Response". United States. https://doi.org/10.1063/1.2888578.
@article{osti_940666,
title = {Carrier Concentration Tuning of Bandgap-Reduced p-Type ZnO Films by Co-Doping of Cu and Ga for Improving Photoelectrochemical Response},
author = {Shet, S and Ahn, K -S and Yan, Y and Deutsch, T and Chrustowski, K M and Turner, J and Al-Jassim, M and Nuggehalli, R},
abstractNote = {In this study, the synthesis of p-type ZnO films with similar bandgaps but varying carrier concentrations through codoping of Cu and Ga is reported. The ZnO:(Cu,Ga) films are synthesized by rf magnetron sputtering in O{sub 2} gas ambient at room temperature, followed by postdeposition annealing at 500 C in air for 2 h. The bandgap reduction and p-type conductivity are caused by the incorporation of Cu. The tuning of carrier concentration is realized by varying the Ga concentration. The carrier concentration tuning does not significantly change the bandgap and crystallinity. However, it can optimize the carrier concentration to significantly enhance the photoelectrochemical response for bandgap-reduced p-type ZnO thin films.},
doi = {10.1063/1.2888578},
url = {https://www.osti.gov/biblio/940666}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 7, 2008,
volume = 103,
place = {United States},
year = {2008},
month = {1}
}