Control of Ferromagnetism via Electron Doping in In2O3:Cr
Carrier-induced ferromagnetism in wide-gap transparent conductive oxides has been widely discussed and debated, leading to confusion and skepticism regarding whether dilute magnetic oxides exist at all. We show from density-functional calculations within a band-gap corrected approach that ferromagnetic Cr-Cr coupling can be switched on and off via electron doping in the wide-gap transparent n-type conductive oxide In{sub 2}O{sub 3}. We show that (1) Cr does not produce in In{sub 2}O{sub 3} any free electrons and renders the system an insulating paramagnet. (2) Extrinsic n-type doping of In{sub 2}O{sub 3}:Cr via Sn produces free electrons, whose concentration is controllable via the oxygen partial pressure. Such additional carriers stabilize a strong long-range Cr-Cr ferromagnetic coupling.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC36-99-GO10337
- OSTI ID:
- 940643
- Journal Information:
- Physical Review Letters, Vol. 101, Issue 2, 11 July 2008; Related Information: Article No. 027203; ISSN 0031-9007
- Country of Publication:
- United States
- Language:
- English
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