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Title: Band Coupling Model of Electron and Hole Mediated Ferromagnetism in Semiconductors: The Case of GaN

Abstract

Transition metal (TM) doped diluted magnetic semiconductors (DMSs) have many unique physical properties that can be used for magneto-optical and spintronic applications. The DMSs exhibit a wide range of magnetic ordering behavior. For example, Mn doped GaN can be either ferromagnetic or antiferromagnetic, depending on the Mn concentration, carrier density, or pressure. A unified band coupling model based on the p-d and d-d level repulsions between the TM and host elements are developed to explain the hole-induced ferromagnetism. We show that kinetic s-d coupling can be introduced through chemical ordering and strain, thus leading to electron-mediated ferromagnetism. Moreover, by using rare-earth elements (e.g., Gd) as magnetic dopants, the symmetry-allowed s-f coupling can also lead to a large splitting at the conduction band edge, producing electron-mediated ferromagnetism. Our model, therefore, provides a simple guideline for future band structure engineering of magnetic semiconductors.

Authors:
;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
940608
DOE Contract Number:  
AC36-99-GO10337
Resource Type:
Journal Article
Journal Name:
Gallium Nitride Materials and Devices III: Proceedings of the SPIE Photonics West Conference, 21 January 2008, San Jose, California
Additional Journal Information:
Journal Volume: 6894; Related Information: Paper No. 68940L
Publisher:
Bellingham, WA: SPIE - The International Society for Optical Engineering
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARRIER DENSITY; ELECTRONS; FERROMAGNETISM; GALLIUM NITRIDES; KINETICS; MAGNETIC SEMICONDUCTORS; PHYSICAL PROPERTIES; RECOMMENDATIONS; TRANSITION ELEMENTS; Materials Science and Semiconductors

Citation Formats

Wei, S H, and Dalpian, G M. Band Coupling Model of Electron and Hole Mediated Ferromagnetism in Semiconductors: The Case of GaN. United States: N. p., 2008. Web. doi:10.1117/12.763494.
Wei, S H, & Dalpian, G M. Band Coupling Model of Electron and Hole Mediated Ferromagnetism in Semiconductors: The Case of GaN. United States. https://doi.org/10.1117/12.763494
Wei, S H, and Dalpian, G M. Tue . "Band Coupling Model of Electron and Hole Mediated Ferromagnetism in Semiconductors: The Case of GaN". United States. https://doi.org/10.1117/12.763494.
@article{osti_940608,
title = {Band Coupling Model of Electron and Hole Mediated Ferromagnetism in Semiconductors: The Case of GaN},
author = {Wei, S H and Dalpian, G M},
abstractNote = {Transition metal (TM) doped diluted magnetic semiconductors (DMSs) have many unique physical properties that can be used for magneto-optical and spintronic applications. The DMSs exhibit a wide range of magnetic ordering behavior. For example, Mn doped GaN can be either ferromagnetic or antiferromagnetic, depending on the Mn concentration, carrier density, or pressure. A unified band coupling model based on the p-d and d-d level repulsions between the TM and host elements are developed to explain the hole-induced ferromagnetism. We show that kinetic s-d coupling can be introduced through chemical ordering and strain, thus leading to electron-mediated ferromagnetism. Moreover, by using rare-earth elements (e.g., Gd) as magnetic dopants, the symmetry-allowed s-f coupling can also lead to a large splitting at the conduction band edge, producing electron-mediated ferromagnetism. Our model, therefore, provides a simple guideline for future band structure engineering of magnetic semiconductors.},
doi = {10.1117/12.763494},
url = {https://www.osti.gov/biblio/940608}, journal = {Gallium Nitride Materials and Devices III: Proceedings of the SPIE Photonics West Conference, 21 January 2008, San Jose, California},
number = ,
volume = 6894,
place = {United States},
year = {2008},
month = {1}
}