Band Coupling Model of Electron and Hole Mediated Ferromagnetism in Semiconductors: The Case of GaN

doi:https://doi.org/10.1117/12.763494

Title: Band Coupling Model of Electron and Hole Mediated Ferromagnetism in Semiconductors: The Case of GaN

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Abstract

Transition metal (TM) doped diluted magnetic semiconductors (DMSs) have many unique physical properties that can be used for magneto-optical and spintronic applications. The DMSs exhibit a wide range of magnetic ordering behavior. For example, Mn doped GaN can be either ferromagnetic or antiferromagnetic, depending on the Mn concentration, carrier density, or pressure. A unified band coupling model based on the p-d and d-d level repulsions between the TM and host elements are developed to explain the hole-induced ferromagnetism. We show that kinetic s-d coupling can be introduced through chemical ordering and strain, thus leading to electron-mediated ferromagnetism. Moreover, by using rare-earth elements (e.g., Gd) as magnetic dopants, the symmetry-allowed s-f coupling can also lead to a large splitting at the conduction band edge, producing electron-mediated ferromagnetism. Our model, therefore, provides a simple guideline for future band structure engineering of magnetic semiconductors.

Authors:: Wei, S H; Dalpian, G M

Publication Date:: 2008-01-01

Research Org.:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 940608

DOE Contract Number:: AC36-99-GO10337

Resource Type:: Journal Article

Journal Name:: Gallium Nitride Materials and Devices III: Proceedings of the SPIE Photonics West Conference, 21 January 2008, San Jose, California

Additional Journal Information:: Journal Volume: 6894; Related Information: Paper No. 68940L

Publisher:: Bellingham, WA: SPIE - The International Society for Optical Engineering

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARRIER DENSITY; ELECTRONS; FERROMAGNETISM; GALLIUM NITRIDES; KINETICS; MAGNETIC SEMICONDUCTORS; PHYSICAL PROPERTIES; RECOMMENDATIONS; TRANSITION ELEMENTS; Materials Science and Semiconductors

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                    Wei, S H, and Dalpian, G M. Band Coupling Model of Electron and Hole Mediated Ferromagnetism in Semiconductors: The Case of GaN.  United States: N. p., 2008. 
        Web.  doi:10.1117/12.763494.

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                    Wei, S H, & Dalpian, G M. Band Coupling Model of Electron and Hole Mediated Ferromagnetism in Semiconductors: The Case of GaN.  United States.  https://doi.org/10.1117/12.763494

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                    Wei, S H, and Dalpian, G M. Tue .  
        "Band Coupling Model of Electron and Hole Mediated Ferromagnetism in Semiconductors: The Case of GaN".  United States.  https://doi.org/10.1117/12.763494.

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@article{osti_940608,

  title        = {Band Coupling Model of Electron and Hole Mediated Ferromagnetism in Semiconductors: The Case of GaN},

  author       = {Wei, S H and Dalpian, G M},

  abstractNote = {Transition metal (TM) doped diluted magnetic semiconductors (DMSs) have many unique physical properties that can be used for magneto-optical and spintronic applications. The DMSs exhibit a wide range of magnetic ordering behavior. For example, Mn doped GaN can be either ferromagnetic or antiferromagnetic, depending on the Mn concentration, carrier density, or pressure. A unified band coupling model based on the p-d and d-d level repulsions between the TM and host elements are developed to explain the hole-induced ferromagnetism. We show that kinetic s-d coupling can be introduced through chemical ordering and strain, thus leading to electron-mediated ferromagnetism. Moreover, by using rare-earth elements (e.g., Gd) as magnetic dopants, the symmetry-allowed s-f coupling can also lead to a large splitting at the conduction band edge, producing electron-mediated ferromagnetism. Our model, therefore, provides a simple guideline for future band structure engineering of magnetic semiconductors.},

  doi          = {10.1117/12.763494},

  url          = {https://www.osti.gov/biblio/940608},
  journal      = {Gallium Nitride Materials and Devices III: Proceedings of the SPIE Photonics West Conference, 21 January 2008, San Jose, California},
number       = ,

  volume       = 6894,

  place        = {United States},

  year         = {2008},

  month        = {1}

}

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