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Title: Electrical and Optical Gain Lever Effects in InGaAs Double Quantum Well Diode Lasers

Abstract

In multisection laser diodes, the amplitude or frequency modulation (AM or FM) efficiency can be improved using the gain lever effect. To study gain lever, InGaAs double quantum well (DQW) edge emitting lasers have been fabricated with integrated passive waveguides and dual sections providing a range of split ratios from 1:1 to 9:1. Both the electrical and the optical gain lever have been examined. An electrical gain lever with greater than 7 dB enhancement of AM efficiency was achieved within the range of appropriate DC biasing currents, but this gain dropped rapidly outside this range. We observed a 4 dB gain in the optical AM efficiency under non-ideal biasing conditions. This value agreed with the measured gain for the electrical AM efficiency under similar conditions. We also examined the gain lever effect under large signal modulation for digital logic switching applications. To get a useful gain lever for optical gain quenched logic, a long control section is needed to preserve the gain lever strength and a long interaction length between the input optical signal and the lasing field of the diode must be provided. The gain lever parameter space has been fully characterized and validated against numerical simulations of amore » semi-3D hybrid beam propagation method (BPM) model for the coupled electron-photon rate equation. We find that the optical gain lever can be treated using the electrical injection model, once the absorption in the sample is known.« less

Authors:
; ; ; ; ; ;
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
940495
Report Number(s):
UCRL-JRNL-227058
Journal ID: ISSN 0018-9197; IEJQA7; TRN: US200824%%58
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Journal Article
Resource Relation:
Journal Name: IEEE Journal of Quantum Electronics, vol. 43, no. 10, October 1, 2007, pp. 860-868; Journal Volume: 43; Journal Issue: 10
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; 71 CLASSICAL AND QUANTUMM MECHANICS, GENERAL PHYSICS; ABSORPTION; AMPLITUDES; EFFICIENCY; FREQUENCY MODULATION; LASERS; MODULATION; QUANTUM WELLS; WAVEGUIDES

Citation Formats

Pocha, M D, Goddard, L L, Bond, T C, Nikolic, R J, Vernon, S P, Kallman, J S, and Behymer, E M. Electrical and Optical Gain Lever Effects in InGaAs Double Quantum Well Diode Lasers. United States: N. p., 2007. Web. doi:10.1109/JQE.2007.902796.
Pocha, M D, Goddard, L L, Bond, T C, Nikolic, R J, Vernon, S P, Kallman, J S, & Behymer, E M. Electrical and Optical Gain Lever Effects in InGaAs Double Quantum Well Diode Lasers. United States. doi:10.1109/JQE.2007.902796.
Pocha, M D, Goddard, L L, Bond, T C, Nikolic, R J, Vernon, S P, Kallman, J S, and Behymer, E M. Wed . "Electrical and Optical Gain Lever Effects in InGaAs Double Quantum Well Diode Lasers". United States. doi:10.1109/JQE.2007.902796. https://www.osti.gov/servlets/purl/940495.
@article{osti_940495,
title = {Electrical and Optical Gain Lever Effects in InGaAs Double Quantum Well Diode Lasers},
author = {Pocha, M D and Goddard, L L and Bond, T C and Nikolic, R J and Vernon, S P and Kallman, J S and Behymer, E M},
abstractNote = {In multisection laser diodes, the amplitude or frequency modulation (AM or FM) efficiency can be improved using the gain lever effect. To study gain lever, InGaAs double quantum well (DQW) edge emitting lasers have been fabricated with integrated passive waveguides and dual sections providing a range of split ratios from 1:1 to 9:1. Both the electrical and the optical gain lever have been examined. An electrical gain lever with greater than 7 dB enhancement of AM efficiency was achieved within the range of appropriate DC biasing currents, but this gain dropped rapidly outside this range. We observed a 4 dB gain in the optical AM efficiency under non-ideal biasing conditions. This value agreed with the measured gain for the electrical AM efficiency under similar conditions. We also examined the gain lever effect under large signal modulation for digital logic switching applications. To get a useful gain lever for optical gain quenched logic, a long control section is needed to preserve the gain lever strength and a long interaction length between the input optical signal and the lasing field of the diode must be provided. The gain lever parameter space has been fully characterized and validated against numerical simulations of a semi-3D hybrid beam propagation method (BPM) model for the coupled electron-photon rate equation. We find that the optical gain lever can be treated using the electrical injection model, once the absorption in the sample is known.},
doi = {10.1109/JQE.2007.902796},
journal = {IEEE Journal of Quantum Electronics, vol. 43, no. 10, October 1, 2007, pp. 860-868},
number = 10,
volume = 43,
place = {United States},
year = {Wed Jan 03 00:00:00 EST 2007},
month = {Wed Jan 03 00:00:00 EST 2007}
}