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Title: Growth and stability of oxidation resistant Si nanocrystals formed by decomposition of alkyl silanes

Abstract

The synthesis and characterization of 1-10 nm Si nanocrystals highly resistant to oxidation is described. The nanocrystals were prepared by thermal decomposition of tetramethylsilane at 680 C, or in a gold- induced catalytic process at lower temperatures down to 400-450 C using trioctylamine as an initial solvent. Transmission electron microscopic analysis of samples obtained in the presence of gold show that the nanocrystals form via solid-phase epitaxial attachment of Si to the gold crystal lattice. The results of computational modeling performed using first principles density functional theory (DFT) calculations predict that the enhanced stability of nanocrystals to oxidation is due to the presence of N or N-containing groups on the surface of nanocrystals.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
940468
Report Number(s):
UCRL-JRNL-227339
TRN: US0807136
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Physical Chemistry - C, vol. 112, no. 10, February 19, 2008, pp. 3585-3590; Journal Volume: 112; Journal Issue: 10
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CRYSTAL LATTICES; ELECTRONS; FUNCTIONALS; GOLD; OXIDATION; PYROLYSIS; SILANES; SIMULATION; STABILITY; SYNTHESIS; TRIOCTYLAMINE

Citation Formats

Zaitseva, N, Hamel, S, Dai, Z R, Saw, C, Williamson, A J, and Galli, G. Growth and stability of oxidation resistant Si nanocrystals formed by decomposition of alkyl silanes. United States: N. p., 2007. Web.
Zaitseva, N, Hamel, S, Dai, Z R, Saw, C, Williamson, A J, & Galli, G. Growth and stability of oxidation resistant Si nanocrystals formed by decomposition of alkyl silanes. United States.
Zaitseva, N, Hamel, S, Dai, Z R, Saw, C, Williamson, A J, and Galli, G. Fri . "Growth and stability of oxidation resistant Si nanocrystals formed by decomposition of alkyl silanes". United States. doi:. https://www.osti.gov/servlets/purl/940468.
@article{osti_940468,
title = {Growth and stability of oxidation resistant Si nanocrystals formed by decomposition of alkyl silanes},
author = {Zaitseva, N and Hamel, S and Dai, Z R and Saw, C and Williamson, A J and Galli, G},
abstractNote = {The synthesis and characterization of 1-10 nm Si nanocrystals highly resistant to oxidation is described. The nanocrystals were prepared by thermal decomposition of tetramethylsilane at 680 C, or in a gold- induced catalytic process at lower temperatures down to 400-450 C using trioctylamine as an initial solvent. Transmission electron microscopic analysis of samples obtained in the presence of gold show that the nanocrystals form via solid-phase epitaxial attachment of Si to the gold crystal lattice. The results of computational modeling performed using first principles density functional theory (DFT) calculations predict that the enhanced stability of nanocrystals to oxidation is due to the presence of N or N-containing groups on the surface of nanocrystals.},
doi = {},
journal = {Journal of Physical Chemistry - C, vol. 112, no. 10, February 19, 2008, pp. 3585-3590},
number = 10,
volume = 112,
place = {United States},
year = {Fri Jan 12 00:00:00 EST 2007},
month = {Fri Jan 12 00:00:00 EST 2007}
}