Structural, Optical and Electrical Properties of Self-Assembled Films of PbSe Nanocrystals Treated with 1,2-Ethanedithiol
Abstract
We describe the structural, optical, and electrical properties of high-quality films of PbSe nanocrystals fabricated by a layer-by-layer (LbL) dip-coating method that utilizes 1,2-ethanedithiol (EDT) as an insolubilizing agent. Comparative characterization of nanocrystal films made by spin-coating and by the LbL process shows that EDT quantitatively displaces oleic acid on the PbSe surface, causing a large volume loss that electronically couples the nanocrystals while severely degrading their positional and crystallographic order of the films. Field-effect transistors based on EDT-treated films are moderately conductive and ambipolar in the dark, becoming p-type and 30-60 times more conductive under 300 mW cm{sup -2} broadband illumination. The nanocrystal films oxidize rapidly in air to yield, after short air exposures, highly conductive p-type solids. The LbL process described here is a general strategy for producing uniform, conductive nanocrystal films for applications in optoelectronics and solar energy conversion.
- Authors:
- Publication Date:
- Research Org.:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 939501
- DOE Contract Number:
- AC36-99-GO10337
- Resource Type:
- Journal Article
- Journal Name:
- ACS Nano
- Additional Journal Information:
- Journal Volume: 2; Journal Issue: 2, 2008
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 77 NANOSCIENCE AND NANOTECHNOLOGY; AIR; DIP COATING; DITHIOLS; ELECTRICAL PROPERTIES; ILLUMINANCE; LAWRENCE BERKELEY LABORATORY; OLEIC ACID; SOLAR ENERGY CONVERSION; TRANSISTORS; Chemical and Biosciences
Citation Formats
Luther, J M, Law, M, Song, Q, L, Perkins C, C, Beard M, and Nozik, A J. Structural, Optical and Electrical Properties of Self-Assembled Films of PbSe Nanocrystals Treated with 1,2-Ethanedithiol. United States: N. p., 2008.
Web. doi:10.1021/nn7003348.
Luther, J M, Law, M, Song, Q, L, Perkins C, C, Beard M, & Nozik, A J. Structural, Optical and Electrical Properties of Self-Assembled Films of PbSe Nanocrystals Treated with 1,2-Ethanedithiol. United States. https://doi.org/10.1021/nn7003348
Luther, J M, Law, M, Song, Q, L, Perkins C, C, Beard M, and Nozik, A J. 2008.
"Structural, Optical and Electrical Properties of Self-Assembled Films of PbSe Nanocrystals Treated with 1,2-Ethanedithiol". United States. https://doi.org/10.1021/nn7003348.
@article{osti_939501,
title = {Structural, Optical and Electrical Properties of Self-Assembled Films of PbSe Nanocrystals Treated with 1,2-Ethanedithiol},
author = {Luther, J M and Law, M and Song, Q and L, Perkins C and C, Beard M and Nozik, A J},
abstractNote = {We describe the structural, optical, and electrical properties of high-quality films of PbSe nanocrystals fabricated by a layer-by-layer (LbL) dip-coating method that utilizes 1,2-ethanedithiol (EDT) as an insolubilizing agent. Comparative characterization of nanocrystal films made by spin-coating and by the LbL process shows that EDT quantitatively displaces oleic acid on the PbSe surface, causing a large volume loss that electronically couples the nanocrystals while severely degrading their positional and crystallographic order of the films. Field-effect transistors based on EDT-treated films are moderately conductive and ambipolar in the dark, becoming p-type and 30-60 times more conductive under 300 mW cm{sup -2} broadband illumination. The nanocrystal films oxidize rapidly in air to yield, after short air exposures, highly conductive p-type solids. The LbL process described here is a general strategy for producing uniform, conductive nanocrystal films for applications in optoelectronics and solar energy conversion.},
doi = {10.1021/nn7003348},
url = {https://www.osti.gov/biblio/939501},
journal = {ACS Nano},
number = 2, 2008,
volume = 2,
place = {United States},
year = {Tue Jan 01 00:00:00 EST 2008},
month = {Tue Jan 01 00:00:00 EST 2008}
}