Studies of ferroelectric film growth processes using in situ, real-time ion beam analysis.
Further technological advances in ferroelectric thin film-based devices requires to achieve a better understanding of the growth of ferroelectric and electrode layers, including oxygen incorporation during growth and other parameters. This can be achieved using in situ, real-time characterization techniques. We are currently using time-of-flight ion scattering and recoil spectroscopy (TOF-ISARS) to study film growth processes. Results discussed in this review concerns initial studies of the growth of SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) films. As an example, the potential of TOF-ISARS has been demonstrated by determining that the layered SBT films are terminated in an incomplete (Bi{sub 2}O{sub 2}){sup 2+} layer with an oxygen plane as the top most layer. This results and the implications for understanding the resistant to fatigue of Pt/SBT/Pt capacitors are discussed in this review.
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- ER
- DOE Contract Number:
- DE-AC02-06CH11357
- OSTI ID:
- 938073
- Report Number(s):
- ANL/MSD/JA-26643; TRN: US200906%%389
- Journal Information:
- Integr. Ferroelectrics, Vol. 18, Issue 1-4 ; 1997
- Country of Publication:
- United States
- Language:
- ENGLISH
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