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Title: Synthesis and ferroelectric properties of epitaxial BiFeO{sub 3} thin films grown by sputtering.

Abstract

We have grown epitaxial BiFeO{sub 3} thin films with smooth surfaces on (001), (101), and (111) SrTiO{sub 3} substrates using sputtering. Four-circle x-ray diffraction and cross-sectional transmission electron microscopy show that the BiFeO{sub 3} thin films have rhombohedral symmetry although small monoclinic distortions have not been ruled out. Stripe ferroelectric domains oriented perpendicular to the substrate miscut direction and free of impurity phase are observed in BiFeO{sub 3} on high miscut (4{sup o}) (001) SrTiO{sub 3}, which attributes to a relatively high value of remanent polarization ({approx}71 {micro}C/cm{sup 2}). Films grown on low miscut (0.8{sup o}) SrTiO{sub 3} have a small amount of impure phase {alpha}Fe{sub 2}O{sub 3} which contributes to lower the polarization values ({approx}63 {micro}C/cm{sup 2}). The BiFeO{sub 3} films grown on (101) and (111) SrTiO{sub 3} exhibited remanent polarizations of 86 and 98 {micro}C/cm{sup 2}, respectively.

Authors:
; ; ; ; ; ; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC); National Science Foundation (NSF); OUS
OSTI Identifier:
935627
Report Number(s):
ANL/MSD/JA-56649
Journal ID: ISSN 0003-6951; APPLAB; TRN: US200816%%637
DOE Contract Number:
DE-AC02-06CH11357
Resource Type:
Journal Article
Resource Relation:
Journal Name: Appl. Phys. Lett.; Journal Volume: 88; Journal Issue: 2006
Country of Publication:
United States
Language:
ENGLISH
Subject:
36 MATERIALS SCIENCE; BISMUTH OXIDES; IRON OXIDES; EPITAXY; SPUTTERING; SUBSTRATES; SYNTHESIS; THIN FILMS; FERROELECTRIC MATERIALS; POLARIZATION

Citation Formats

Das, R. R., Kim, D. M., Baek, S. H., Zavaliche, F., Yang, S. Y., Ke, X., Streiffer, S. K., Rzchowski, M. S., Ramesh, R., Pan, X. Q., Eom, C. B., Univ. Wisconsin-Madison, Univ. Maryland, Univ. California at Berkeley, and Univ. Michigan. Synthesis and ferroelectric properties of epitaxial BiFeO{sub 3} thin films grown by sputtering.. United States: N. p., 2006. Web. doi:10.1063/1.2213347.
Das, R. R., Kim, D. M., Baek, S. H., Zavaliche, F., Yang, S. Y., Ke, X., Streiffer, S. K., Rzchowski, M. S., Ramesh, R., Pan, X. Q., Eom, C. B., Univ. Wisconsin-Madison, Univ. Maryland, Univ. California at Berkeley, & Univ. Michigan. Synthesis and ferroelectric properties of epitaxial BiFeO{sub 3} thin films grown by sputtering.. United States. doi:10.1063/1.2213347.
Das, R. R., Kim, D. M., Baek, S. H., Zavaliche, F., Yang, S. Y., Ke, X., Streiffer, S. K., Rzchowski, M. S., Ramesh, R., Pan, X. Q., Eom, C. B., Univ. Wisconsin-Madison, Univ. Maryland, Univ. California at Berkeley, and Univ. Michigan. Sun . "Synthesis and ferroelectric properties of epitaxial BiFeO{sub 3} thin films grown by sputtering.". United States. doi:10.1063/1.2213347.
@article{osti_935627,
title = {Synthesis and ferroelectric properties of epitaxial BiFeO{sub 3} thin films grown by sputtering.},
author = {Das, R. R. and Kim, D. M. and Baek, S. H. and Zavaliche, F. and Yang, S. Y. and Ke, X. and Streiffer, S. K. and Rzchowski, M. S. and Ramesh, R. and Pan, X. Q. and Eom, C. B. and Univ. Wisconsin-Madison and Univ. Maryland and Univ. California at Berkeley and Univ. Michigan},
abstractNote = {We have grown epitaxial BiFeO{sub 3} thin films with smooth surfaces on (001), (101), and (111) SrTiO{sub 3} substrates using sputtering. Four-circle x-ray diffraction and cross-sectional transmission electron microscopy show that the BiFeO{sub 3} thin films have rhombohedral symmetry although small monoclinic distortions have not been ruled out. Stripe ferroelectric domains oriented perpendicular to the substrate miscut direction and free of impurity phase are observed in BiFeO{sub 3} on high miscut (4{sup o}) (001) SrTiO{sub 3}, which attributes to a relatively high value of remanent polarization ({approx}71 {micro}C/cm{sup 2}). Films grown on low miscut (0.8{sup o}) SrTiO{sub 3} have a small amount of impure phase {alpha}Fe{sub 2}O{sub 3} which contributes to lower the polarization values ({approx}63 {micro}C/cm{sup 2}). The BiFeO{sub 3} films grown on (101) and (111) SrTiO{sub 3} exhibited remanent polarizations of 86 and 98 {micro}C/cm{sup 2}, respectively.},
doi = {10.1063/1.2213347},
journal = {Appl. Phys. Lett.},
number = 2006,
volume = 88,
place = {United States},
year = {Sun Jan 01 00:00:00 EST 2006},
month = {Sun Jan 01 00:00:00 EST 2006}
}
  • We have grown epitaxial BiFeO{sub 3} thin films with smooth surfaces on (001) (101), and (111) SrTiO{sub 3} substrates using sputtering. Four-circle x-ray diffraction and cross-sectional transmission electron microscopy show that the BiFeO{sub 3} thin films have rhombohedral symmetry although small monoclinic distortions have not been ruled out. Stripe ferroelectric domains oriented perpendicular to the substrate miscut direction and free of impurity phase are observed in BiFeO{sub 3} on high miscut (4 deg.) (001) SrTiO{sub 3}, which attributes to a relatively high value of remanent polarization ({approx}71 {mu}C/cm{sup 2}). Films grown on low miscut (0.8 deg.) SrTiO{sub 3} have amore » small amount of impure phase {alpha}-Fe{sub 2}O{sub 3} which contributes to lower the polarization values ({approx}63 {mu}C/cm{sup 2}). The BiFeO{sub 3} films grown on (101) and (111) SrTiO{sub 3} exhibited remanent polarizations of 86 and 98 {mu}C/cm{sup 2}, respectively.« less
  • Phase pure bismuth ferrite (BiFeO{sub 3}) thin films with (001)-oriented epitaxial structure are realized on lanthanum strontium manganite (La{sub 0.67}Sr{sub 0.33}MnO{sub 3}) buffered (001)-SrTiO{sub 3} substrates by chemical solution deposition. The annealing process is optimized such that a stoichiometric precursor can be used to accurately control the Bi:Fe ratio. Ferroelectric, dielectric, and resistive switching behaviours are investigated for 40 nm, 70 nm, and 150 nm BFO thin films. While the thinnest film (40 nm) shows very leaky loops, square and fully saturated polarization hysteresis loops are shown for the thicker films. The highest remanent polarization (2P{sub r} = 100 μC/cm{sup 2}) and relative dielectric constant (ε{sub r} = 613)more » are obtained in the 150 nm BFO thin film. High cycle fatigue tests show that the thick films are resistant to polarization fatigue. Piezoresponse force microscopy results show that the domain structure varies with thickness. Resistive switching and polarization mediated diode effects are also observed. These robust properties suggest that chemical solution deposition derived BiFeO{sub 3} thin films can offer a viable low cost alternative.« less
  • In this study, (011)-highly oriented Sr, Nb co-doped BiFeO{sub 3} (BFO) thin films were successfully grown on SrRuO{sub 3}/Si substrates by rf-magnetron sputtering. The presence of parasite magnetic phases was ruled out based on the high resolution x-ray diffraction data. BFO films exhibited a columnar-like grain growth with rms surface roughness values of {approx_equal}5.3 nm and average grain sizes of {approx_equal}65-70 nm for samples with different thicknesses. Remanent polarization values (2P{sub r}) of 54 {mu}C cm{sup -2} at room temperature were found for the BFO films with a ferroelectric behavior characteristic of an asymmetric device structure. Analysis of the leakagemore » mechanisms for this structure in negative bias suggests Schottky injection and a dominant Poole-Frenkel trap-limited conduction at room temperature. Oxygen vacancies and Fe{sup 3+}/Fe{sup 2+} trap centers are consistent with the surface chemical bonding states analysis from x-ray photoelectron spectroscopy data. The (011)-BFO/SrRuO{sub 3}/Si film structure exhibits a strong magnetic interaction at the interface between the multiferroic film and the substrate layer where an enhanced ferromagnetic response at 5 K was observed. Zero-field cooled (ZFC) and field cooled (FC) magnetization curves of this film system revealed a possible spin glass behavior at spin freezing temperatures below 30 K depending on the BFO film thickness.« less
  • Growth of multifunctional thin films on flexible substrates is of great technological significance since such a platform is needed for flexible electronics. In this study, we report the growth of biaxially aligned (BiFeO{sub 3}){sub 0.5}:(BiMnO{sub 3}){sub 0.5} [BFO-BMO] films on polycrystalline Hastelloy by using a biaxially aligned TiN as a seed layer deposited by ion-beam-assisted deposited and a La{sub 0.7}Sr{sub 0.3}MnO{sub 3} (LSMO) as a buffer layer deposited by pulsed laser deposition. The LSMO is used not only as a buffer layer but also as the bottom electrode of the BFO-BMO films. X-ray diffraction showed that the BFO-BMO films aremore » biaxially oriented along both in-plane and out-of-plane directions. The BFO-BMO films on flexible metal substrates showed a polarization of 22.9 μC/cm{sup 2}. The magnetization of the BFO-BMO/LSMO is 62 emu/cc at room temperature.« less
  • Considering energy band alignment and polarization effect, ferroelectric BiFeO{sub 3} thin films are proposed as the photoanode in a monolithic cell to achieve unassisted photocatalytic water splitting. Significant anodic photocurrent was observed in our epitaxial ferroelectric BiFeO{sub 3} films prepared from sputter deposition. Both negative polarization charges and thinner films were found to promote the anodic photocatalytic reaction. Ultraviolet photoelectron spectroscopy proved that the conduction and valence band edges of BiFeO{sub 3} straddle the water redox levels. Theoretical analyses show that the large switchable polarization can modify the surface properties to promote the hydrogen and oxygen evolutions on the surfacesmore » with positive and negative polarization charges, respectively.« less