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Title: Microscopic structure and dynamics of molten Se{sub 50}Te{sub 50} alloys.

Abstract

No abstract prepared.

Authors:
; ; ; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC); European Commission (EC)
OSTI Identifier:
934905
Report Number(s):
ANL/XSD/JA-62017
Journal ID: ISSN 0021-9606; JCPSA6; TRN: US200814%%565
DOE Contract Number:
DE-AC02-06CH11357
Resource Type:
Journal Article
Resource Relation:
Journal Name: J. Chem. Phys.; Journal Volume: 127; Journal Issue: 2007
Country of Publication:
United States
Language:
ENGLISH
Subject:
36 MATERIALS SCIENCE; SELENIUM ALLOYS; TELLURIUM ALLOYS; LIQUID METALS; MICROSTRUCTURE; DYNAMICS

Citation Formats

Katcho, N. A., Zetterstrom, P., Lomba, E., Otero-Diaz, L. C., Wang, Y. D., Ren, Y., Gruner, S., X-Ray Science Division, Inst. de Quimica, Northeastern Univ., Univ. of Tennessee, and Inst. fur Physik. Microscopic structure and dynamics of molten Se{sub 50}Te{sub 50} alloys.. United States: N. p., 2007. Web. doi:10.1063/1.2790899.
Katcho, N. A., Zetterstrom, P., Lomba, E., Otero-Diaz, L. C., Wang, Y. D., Ren, Y., Gruner, S., X-Ray Science Division, Inst. de Quimica, Northeastern Univ., Univ. of Tennessee, & Inst. fur Physik. Microscopic structure and dynamics of molten Se{sub 50}Te{sub 50} alloys.. United States. doi:10.1063/1.2790899.
Katcho, N. A., Zetterstrom, P., Lomba, E., Otero-Diaz, L. C., Wang, Y. D., Ren, Y., Gruner, S., X-Ray Science Division, Inst. de Quimica, Northeastern Univ., Univ. of Tennessee, and Inst. fur Physik. Mon . "Microscopic structure and dynamics of molten Se{sub 50}Te{sub 50} alloys.". United States. doi:10.1063/1.2790899.
@article{osti_934905,
title = {Microscopic structure and dynamics of molten Se{sub 50}Te{sub 50} alloys.},
author = {Katcho, N. A. and Zetterstrom, P. and Lomba, E. and Otero-Diaz, L. C. and Wang, Y. D. and Ren, Y. and Gruner, S. and X-Ray Science Division and Inst. de Quimica and Northeastern Univ. and Univ. of Tennessee and Inst. fur Physik},
abstractNote = {No abstract prepared.},
doi = {10.1063/1.2790899},
journal = {J. Chem. Phys.},
number = 2007,
volume = 127,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2007},
month = {Mon Jan 01 00:00:00 EST 2007}
}
  • In this work we present an investigation on the composition dependence of the local structure in Se{sub x}Te{sub 1-x} crystalline alloys analyzing their experimental energy-loss spectra with the aid of a real-space multiple-scattering modeling approach and first-principles molecular dynamics. The concourse of this latter technique is essential for a proper modeling of the alloy spectra. From our results, it can be inferred that Se{sub x}Te{sub 1-x} alloys exhibit a high degree of substitutional disorder ruling out the existence of fully ordered alternating copolymer chains of Se and Te atoms.
  • Highlights: • The amorphous nature of as prepared Ge{sub 20}Se{sub 50}Te{sub 30} films was confirmed by XRD. • The thermal annealing was found to affect the structure and optical parameter. • Thermal annealing resulted in an appearance of crystalline phases in studied films. • The average particle size increased with increasing the annealing temperature. • The indirect band gap was found to decrease with increasing annealing temperature. - Abstract: Bulk glasses and thin films of Ge{sub 20}Se{sub 50}Te{sub 30} were prepared by melt-quenching and thermal evaporation technique, respectively. The stoichiometry of the composition was checked by energy dispersive X-ray diffractionmore » (EDX), whereas the crystallization was investigated using differential scanning calorimetery (DSC). The effect of heat treatment on the structure transformation of Ge{sub 20}Se{sub 50}Te{sub 30} films was determined by X-ray diffraction (XRD). The XRD results reveal that the as-prepared films are amorphous in nature while the annealed ones show crystalline phases. Further, the average crystallite size, strain, and dislocation density were found to depend on the annealing temperature. The optical transmittance and reflectance of the studied films at different annealing temperatures were measured using spectrophotometer. The optical parameters were calculated as a function of annealing temperature. The optical transition was found to be allowed indirect transition with optical band gap decreases from 1.69 to 1.41 eV with increasing the annealing temperature from 553 to 633 K.« less
  • The authors investigate the effect of heat treatment on the interface of single crystals of solid solutions of the systems Bi/sub 2/Te/sub 3/-Bi/sub 2/Se/sub 3/ and Bi/sub 2/Te/sub 3/-Sb/sub 2/Te/sub 3/ and the alloys Bi-Sn and Bi-Sb. Two methods were considered. In the first method, the surfaces of the samples were mechanically ground with an abrasive paste before treatment, and in the second method they were not ground. Methods of treatment were chemical etching, electrochemical etching, rubbing of the surfaces with cotton balls, and wetting with electrochemical-etching solutions. Dependences of the junction-contact resistance of surfaces of crystals of solid solutionsmore » of the systems investigated here on the heat treatment time and also on the method of preliminary treatment before soldering with alloy and on the soldering method after electrochemical etching are shown.« less
  • A combined investigation of the electrical conductivity, thermo-emf, and Hall effect of Bi/sub 2/Se/sub 3/, Sb/sub 2/Te/sub 3/, and Bi/sub 2/Te/sub 3/ samples was carried out in the region of melting and in the liquid state, using a precision method for the measurement and a highly sensitive apparatus. An example of the obtained information showed, on the basis of the modern theoretical concepts of disordered systems, that the present melts are in accord with Mott's classification, viz., the g-semiconductors.