Final report on LDRD project 105967 : exploring the increase in GaAs photodiode responsivity with increased neutron fluence.
A previous LDRD studying radiation hardened optoelectronic components for space-based applications led to the result that increased neutron irradiation from a fast-burst reactor caused increased responsivity in GaAs photodiodes up to a total fluence of 4.4 x 10{sup 13} neutrons/cm{sup 2} (1 MeV Eq., Si). The silicon photodiodes experienced significant degradation. Scientific literature shows that neutrons can both cause defects as well as potentially remove defects in an annealing-like process in GaAs. Though there has been some modeling that suggests how fabrication and radiation-induced defects can migrate to surfaces and interfaces in GaAs and lead to an ordering effect, it is important to consider how these processes affect the performance of devices, such as the basic GaAs p-i-n photodiode. In this LDRD, we manufactured GaAs photodiodes at the MESA facility, irradiated them with electrons and neutrons at the White Sands Missile Range Linac and Fast Burst Reactor, and performed measurements to show the effect of irradiation on dark current, responsivity and high-speed bandwidth.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 934851
- Report Number(s):
- SAND2007-8095; TRN: US0804099
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
43 PARTICLE ACCELERATORS
DEFECTS
ELECTRONS
FABRICATION
IRRADIATION
LINEAR ACCELERATORS
MISSILES
NEUTRON FLUENCE
NEUTRONS
PERFORMANCE
PHOTODIODES
PULSED REACTORS
RADIATIONS
SILICON
SIMULATION
Irradiation-Testing.
Neutron irradiation.
Gallium arsenide.
Gallium arsenide semiconductors-Testing.