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Title: Compensating point defects in 4he+-irradiated inn

Abstract

No abstract prepared.

Authors:
; ; ; ;
Publication Date:
Research Org.:
COLLABORATION - Helsiniki University ofTechnology
OSTI Identifier:
932486
Report Number(s):
LBNL-62957
R&D Project: 513360; TRN: US0803535
DOE Contract Number:
DE-AC02-05CH11231
Resource Type:
Journal Article
Resource Relation:
Journal Name: Physical Review B; Journal Volume: 75; Related Information: Journal Publication Date: 5/14/07
Country of Publication:
United States
Language:
English
Subject:
36; POINT DEFECTS; INDIUM NITRIDES; HELIUM 4; IRRADIATION

Citation Formats

Tuomisto, F., Pelli, A., Yu, K.M., Walukiewicz, W., and Schaff, W.J. Compensating point defects in 4he+-irradiated inn. United States: N. p., 2007. Web. doi:10.1103/PhysRevB.75.193201.
Tuomisto, F., Pelli, A., Yu, K.M., Walukiewicz, W., & Schaff, W.J. Compensating point defects in 4he+-irradiated inn. United States. doi:10.1103/PhysRevB.75.193201.
Tuomisto, F., Pelli, A., Yu, K.M., Walukiewicz, W., and Schaff, W.J. Mon . "Compensating point defects in 4he+-irradiated inn". United States. doi:10.1103/PhysRevB.75.193201.
@article{osti_932486,
title = {Compensating point defects in 4he+-irradiated inn},
author = {Tuomisto, F. and Pelli, A. and Yu, K.M. and Walukiewicz, W. and Schaff, W.J.},
abstractNote = {No abstract prepared.},
doi = {10.1103/PhysRevB.75.193201},
journal = {Physical Review B},
number = ,
volume = 75,
place = {United States},
year = {Mon Feb 26 00:00:00 EST 2007},
month = {Mon Feb 26 00:00:00 EST 2007}
}
  • We use positron annihilation spectroscopy to study 2 MeV {sup 4}He{sup +}-irradiated InN grown by molecular-beam epitaxy and GaN grown by metal-organic chemical-vapor deposition. In GaN, the Ga vacancies act as important compensating centers in the irradiated material, introduced at a rate of 3600 cm{sup -1}. The In vacancies are introduced at a significantly lower rate of 100 cm{sup -1}, making them negligible in the compensation of the irradiation-induced additional n-type conductivity in InN. On the other hand, negative non-open volume defects are introduced at a rate higher than 2000 cm{sup -1}. These defects are tentatively attributed to interstitial nitrogenmore » and may ultimately limit the free-electron concentration at high irradiation fluences.« less
  • A Fermi-level control scheme for point defect management using above-bandgap UV illumination during growth is presented. We propose an extension to the analogy between the Fermi level and the electrochemical potential such that the electrochemical potential of a charged defect in a material with steady-state populations of free charge carriers may be expressed in terms of the quasi-Fermi levels. A series of highly Si-doped Al0.65Ga0.35N films grown by metalorganic chemical vapor deposition with and without UV illumination showed that samples grown under UV illumination had increased free carrier concentration, free carrier mobility, and reduced midgap photoluminescence all indicating a reductionmore » in compensating point defects. (c) 2014 AIP Publishing LLC.« less
  • Cited by 18
  • Native defects in In{sub x}Ga{sub 1-x}N (x = 0.06-0.14) grown by metal organic chemical vapor deposition were studied using a monoenergetic positron beam. Measurements of Doppler broadening spectra of the annihilation radiation as a function of incident positron energy for In{sub x}Ga{sub 1-x}N showed that vacancy-type defects were introduced with increasing InN composition, and the major defect species was identified as complexes between a cation vacancy and a nitrogen vacancy. The concentration of the divacancy, however, was found to be suppressed by Mg doping. The momentum distribution of electrons at the In{sub x}Ga{sub 1-x}N/GaN interface was close to that inmore » defect-free GaN or In{sub x}Ga{sub 1-x}N, which was attributed to localization of positrons at the interface due to the built-in electric field, and to suppression of positron trapping by vacancy-type defects. We have also shown that the diffusion property of positrons is sensitive to an electric field near the In{sub x}Ga{sub 1-x}N/GaN interface.« less