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Title: Formation of High-Quality, Epitaxial La 2Zr 2O 7 Layers on Biaxially Textured Substrates by Slot-Die Coating of Chemical Solution Precursors

Abstract

Crystallization studies were performed of epitaxial La{sub 2}Zr{sub 2}O{sub 7} (LZO) films on biaxially textured Ni-3at.%W substrates having thin Y{sub 2}O{sub 3} (10 nm) seed layers. LZO films were deposited under controlled humid atmosphere using reel-to-reel slot-die coating of chemical solution precursors. Controlled crystallization under various processing conditions has revealed a broad phase space for obtaining high-quality, epitaxial LZO films without microcracks, with no degradation of crystallographic texture and with high surface crystallinity. Crack-free and strong c-axis aligned LZO films with no random orientation were obtained even at relatively low annealing temperatures of 850-950 C in flowing one atmosphere gas mixtures of Ar-4% H2 with an effective oxygen partial pressure of P(O2){approx}10{sup -22} atm. Texture and reflection high-energy electron diffraction analyses reveal that low-temperature-annealed samples have strong cube-on-cube epitaxy and high surface crystallinity, comparable to those of LZO film annealed at high temperature of 1100 C. In addition, these samples have a smoother surface morphology than films annealed at higher temperatures. Ni diffusion rate into the LZO buffer film is also expected to be significantly reduced at the lower annealing temperatures.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1]
  1. ORNL
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
OE USDOE - Office of Electric Transmission and Distribution
OSTI Identifier:
931999
DOE Contract Number:  
DE-AC05-00OR22725
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of the American Ceramic Society; Journal Volume: 90; Journal Issue: 11
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; LANTHANUM OXIDES; ZIRCONIUM OXIDES; CRYSTALLIZATION; SUBSTRATES; NICKEL ALLOYS; TUNGSTEN ALLOYS; YTTRIUM OXIDES; ANNEALING; SURFACE PROPERTIES; COATINGS

Citation Formats

Wee, Sung Hun, Goyal, Amit, Hsu, Huey S, Li, Jing, Heatherly Jr, Lee, Kim, Kyunghoon, Aytug, Tolga, Sathyamurthy, Srivatsan, and Paranthaman, Mariappan Parans. Formation of High-Quality, Epitaxial La2Zr2O7 Layers on Biaxially Textured Substrates by Slot-Die Coating of Chemical Solution Precursors. United States: N. p., 2007. Web. doi:10.1111/j.1551-2916.2007.01955.x.
Wee, Sung Hun, Goyal, Amit, Hsu, Huey S, Li, Jing, Heatherly Jr, Lee, Kim, Kyunghoon, Aytug, Tolga, Sathyamurthy, Srivatsan, & Paranthaman, Mariappan Parans. Formation of High-Quality, Epitaxial La2Zr2O7 Layers on Biaxially Textured Substrates by Slot-Die Coating of Chemical Solution Precursors. United States. doi:10.1111/j.1551-2916.2007.01955.x.
Wee, Sung Hun, Goyal, Amit, Hsu, Huey S, Li, Jing, Heatherly Jr, Lee, Kim, Kyunghoon, Aytug, Tolga, Sathyamurthy, Srivatsan, and Paranthaman, Mariappan Parans. Mon . "Formation of High-Quality, Epitaxial La2Zr2O7 Layers on Biaxially Textured Substrates by Slot-Die Coating of Chemical Solution Precursors". United States. doi:10.1111/j.1551-2916.2007.01955.x.
@article{osti_931999,
title = {Formation of High-Quality, Epitaxial La2Zr2O7 Layers on Biaxially Textured Substrates by Slot-Die Coating of Chemical Solution Precursors},
author = {Wee, Sung Hun and Goyal, Amit and Hsu, Huey S and Li, Jing and Heatherly Jr, Lee and Kim, Kyunghoon and Aytug, Tolga and Sathyamurthy, Srivatsan and Paranthaman, Mariappan Parans},
abstractNote = {Crystallization studies were performed of epitaxial La{sub 2}Zr{sub 2}O{sub 7} (LZO) films on biaxially textured Ni-3at.%W substrates having thin Y{sub 2}O{sub 3} (10 nm) seed layers. LZO films were deposited under controlled humid atmosphere using reel-to-reel slot-die coating of chemical solution precursors. Controlled crystallization under various processing conditions has revealed a broad phase space for obtaining high-quality, epitaxial LZO films without microcracks, with no degradation of crystallographic texture and with high surface crystallinity. Crack-free and strong c-axis aligned LZO films with no random orientation were obtained even at relatively low annealing temperatures of 850-950 C in flowing one atmosphere gas mixtures of Ar-4% H2 with an effective oxygen partial pressure of P(O2){approx}10{sup -22} atm. Texture and reflection high-energy electron diffraction analyses reveal that low-temperature-annealed samples have strong cube-on-cube epitaxy and high surface crystallinity, comparable to those of LZO film annealed at high temperature of 1100 C. In addition, these samples have a smoother surface morphology than films annealed at higher temperatures. Ni diffusion rate into the LZO buffer film is also expected to be significantly reduced at the lower annealing temperatures.},
doi = {10.1111/j.1551-2916.2007.01955.x},
journal = {Journal of the American Ceramic Society},
number = 11,
volume = 90,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2007},
month = {Mon Jan 01 00:00:00 EST 2007}
}