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Title: Formation of High-Quality, Epitaxial La 2Zr 2O 7 Layers on Biaxially Textured Substrates by Slot-Die Coating of Chemical Solution Precursors

Abstract

Crystallization studies were performed of epitaxial La{sub 2}Zr{sub 2}O{sub 7} (LZO) films on biaxially textured Ni-3at.%W substrates having thin Y{sub 2}O{sub 3} (10 nm) seed layers. LZO films were deposited under controlled humid atmosphere using reel-to-reel slot-die coating of chemical solution precursors. Controlled crystallization under various processing conditions has revealed a broad phase space for obtaining high-quality, epitaxial LZO films without microcracks, with no degradation of crystallographic texture and with high surface crystallinity. Crack-free and strong c-axis aligned LZO films with no random orientation were obtained even at relatively low annealing temperatures of 850-950 C in flowing one atmosphere gas mixtures of Ar-4% H2 with an effective oxygen partial pressure of P(O2){approx}10{sup -22} atm. Texture and reflection high-energy electron diffraction analyses reveal that low-temperature-annealed samples have strong cube-on-cube epitaxy and high surface crystallinity, comparable to those of LZO film annealed at high temperature of 1100 C. In addition, these samples have a smoother surface morphology than films annealed at higher temperatures. Ni diffusion rate into the LZO buffer film is also expected to be significantly reduced at the lower annealing temperatures.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1]
  1. ORNL
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
OE USDOE - Office of Electric Transmission and Distribution
OSTI Identifier:
931999
DOE Contract Number:
DE-AC05-00OR22725
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of the American Ceramic Society; Journal Volume: 90; Journal Issue: 11
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; LANTHANUM OXIDES; ZIRCONIUM OXIDES; CRYSTALLIZATION; SUBSTRATES; NICKEL ALLOYS; TUNGSTEN ALLOYS; YTTRIUM OXIDES; ANNEALING; SURFACE PROPERTIES; COATINGS

Citation Formats

Wee, Sung Hun, Goyal, Amit, Hsu, Huey S, Li, Jing, Heatherly Jr, Lee, Kim, Kyunghoon, Aytug, Tolga, Sathyamurthy, Srivatsan, and Paranthaman, Mariappan Parans. Formation of High-Quality, Epitaxial La2Zr2O7 Layers on Biaxially Textured Substrates by Slot-Die Coating of Chemical Solution Precursors. United States: N. p., 2007. Web. doi:10.1111/j.1551-2916.2007.01955.x.
Wee, Sung Hun, Goyal, Amit, Hsu, Huey S, Li, Jing, Heatherly Jr, Lee, Kim, Kyunghoon, Aytug, Tolga, Sathyamurthy, Srivatsan, & Paranthaman, Mariappan Parans. Formation of High-Quality, Epitaxial La2Zr2O7 Layers on Biaxially Textured Substrates by Slot-Die Coating of Chemical Solution Precursors. United States. doi:10.1111/j.1551-2916.2007.01955.x.
Wee, Sung Hun, Goyal, Amit, Hsu, Huey S, Li, Jing, Heatherly Jr, Lee, Kim, Kyunghoon, Aytug, Tolga, Sathyamurthy, Srivatsan, and Paranthaman, Mariappan Parans. Mon . "Formation of High-Quality, Epitaxial La2Zr2O7 Layers on Biaxially Textured Substrates by Slot-Die Coating of Chemical Solution Precursors". United States. doi:10.1111/j.1551-2916.2007.01955.x.
@article{osti_931999,
title = {Formation of High-Quality, Epitaxial La2Zr2O7 Layers on Biaxially Textured Substrates by Slot-Die Coating of Chemical Solution Precursors},
author = {Wee, Sung Hun and Goyal, Amit and Hsu, Huey S and Li, Jing and Heatherly Jr, Lee and Kim, Kyunghoon and Aytug, Tolga and Sathyamurthy, Srivatsan and Paranthaman, Mariappan Parans},
abstractNote = {Crystallization studies were performed of epitaxial La{sub 2}Zr{sub 2}O{sub 7} (LZO) films on biaxially textured Ni-3at.%W substrates having thin Y{sub 2}O{sub 3} (10 nm) seed layers. LZO films were deposited under controlled humid atmosphere using reel-to-reel slot-die coating of chemical solution precursors. Controlled crystallization under various processing conditions has revealed a broad phase space for obtaining high-quality, epitaxial LZO films without microcracks, with no degradation of crystallographic texture and with high surface crystallinity. Crack-free and strong c-axis aligned LZO films with no random orientation were obtained even at relatively low annealing temperatures of 850-950 C in flowing one atmosphere gas mixtures of Ar-4% H2 with an effective oxygen partial pressure of P(O2){approx}10{sup -22} atm. Texture and reflection high-energy electron diffraction analyses reveal that low-temperature-annealed samples have strong cube-on-cube epitaxy and high surface crystallinity, comparable to those of LZO film annealed at high temperature of 1100 C. In addition, these samples have a smoother surface morphology than films annealed at higher temperatures. Ni diffusion rate into the LZO buffer film is also expected to be significantly reduced at the lower annealing temperatures.},
doi = {10.1111/j.1551-2916.2007.01955.x},
journal = {Journal of the American Ceramic Society},
number = 11,
volume = 90,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2007},
month = {Mon Jan 01 00:00:00 EST 2007}
}
  • In-plane-aligned, c axis-oriented YBa{sub 2}Cu{sub 3}O{sub 7} (YBCO) films with superconducting critical current densities J{sub c} as high as 700,000 amperes per square centimeter at 77 kelvin have been grown on thermomechanically rolled-textured nickel (001) tapes by pulsed-laser deposition. Epitaxial growth of oxide buffer layers directly on biaxially textured nickel, formed by recrystallization of cold-rolled pure nickel, made possible the growth of YBCO films 1.5 micrometers thick with superconducting properties that are comparable to those observed for epitaxial films on single-crystal oxide substrates. This result represents a viable approach for the production of long superconducting tapes for high-current, high-field applicationsmore » at 77 kelvin. 30 refs., 4 figs.« less
  • This paper describes the development of 3 buffer layer architectures with good biaxial textures on rolled-Ni substrates using vacuum processing techniques. The techniques include pulsed laser ablation, e-beam evaporation, dc and rf magnetron sputtering. The first buffer layer architecture consists of an epitaxial laminate of Ag/Pd(Pt)/Ni. The second buffer layer consists of an epitaxial laminate of CeO{sub 2}/Pd/Ni. The third alternative buffer layer architecture consists of an epitaxial laminate of YSZ/CeO{sub 2}/Ni. The cube (100) texture in the Ni was produced by cold rolling followed by recrystallization. Crystallographic orientations of the Pd, Ag, CeO{sub 2}, and YSZ films grown weremore » all (100). We recently demonstrated a critical- current density of 0.73x10{sup 6} A/cm{sup 2} at 77 K and zero field on 1.4 {mu}m thick YBa{sub 2}Cu{sub 3}O{sub 7-y} (YBCO) film. This film was deposited by pulsed laser ablation on a YBCO/YSZ/CeO{sub 2}/Ni substrate.« less
  • No abstract prepared.
  • We report a detailed study of the grain orientations and grain boundary (GB) networks in YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} (YBCO) films {approx}0.8 m thick grown by both the in situ pulsed laser deposition (PLD) process and the ex situ metalorganic deposition (MOD) process on rolling-assisted biaxially textured substrates (RABiTS). The PLD and MOD growth processes result in columnar and laminar YBCO grain structures, respectively. In the MOD-processed sample [full-width critical current density J{sub c}(0 T, 77 K) = 3.4 MA/cm{sup 2}], electron back-scatter diffraction (EBSD) revealed an improvement in both the in-plane and out-of-plane alignment of the YBCO relative tomore » the template that resulted in a significant reduction of the total grain boundary misorientation angles. A YBCO grain structure observed above individual template grains was strongly correlated to larger out-of-plane tilts of the template grains. YBCO GBs meandered extensively about their corresponding template GBs and through the thickness of the film. In contrast, the PLD-processed film [full width J{sub c}(0 T, 77 K) = 0.9 MA/cm{sup 2}] exhibited nearly perfect epitaxy, replicating the template grain orientations. No GB meandering was observed in the PLD-processed film with EBSD. Direct transport measurement of the intra-grain J{sub c}(0 T, 77 K) values of PLD and MOD-processed films on RABiTS revealed values up to 4.5 and 5.1 MA/cm{sup 2}, respectively. As the intra-grain J{sub c} values were similar, the significantly higher full-width J{sub c} for the MOD-processed sample is believed to be due to the improved grain alignment and extensive GB meandering.« less
  • The critical current density J{sub c} flowing in thin YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} (YBCO) films of various thicknesses d has been studied magnetometrically, both as a function of applied field H and temperature T, with a central objective to determine the dominant source of vortex pinning in these materials. The films, grown by a BaF{sub 2} ex situ process and deposited on buffered rolling assisted biaxially textured substrates ('RABiTS') substrates of Ni-5% W, have thicknesses d ranging from 28 nm to 1.5 {micro}m. Isothermal magnetization loops M(H;T) and remanent magnetization M{sub rem}(T) in H=0 were measured with H{parallel}c-axis (i.e., normalmore » to film plane). The resulting J{sub c}(d) values (obtained from a modified critical state model) increase with thickness d, peak near d-120 nm, and thereafter decrease as the films get thicker. For a wide range of temperatures and intermediate fields, we find J{sub c} {infinity} H{sup -{alpha}} with {alpha}-(0.56-0.69) for all materials. This feature can be attributed to pinning by large random defects, which theoretically has power-law exponent {alpha} = 5/8. Calculated values for the size and density of defects are comparable with those observed by TEM in the films. As a function of temperature, we find J{sub c}(T,sf)-[1-(T/T{sub c}){sup 2}]{sup n} with n-1.2-1.4. This points to '{delta}T{sub c} pinning' (pinning that suppresses T{sub c} locally) in these YBCO materials.« less