SIMULATION OF STRAIN INDUCED INTERFACE MIGRATION IN SYMMETRIC TILT GRAIN BOUNDARIES
Conference
·
OSTI ID:931712
- ORNL
Grain boundary migration of flat symmetric tilt grain boundaries is simulated using molecular dynamics. The driving force for migration is achieved by applying uniaxial strain on one of the grains in the bicrystal, enabling the growth of strain free grain at the expense of strained grain. Arrhenius dependence of grain boundary mobility on temperature and a linear relation between mobility and grain boundary velocity are observed. Simulations suggest that the mechanism of migration is dependent on vacancy diffusion combined with local reshuffling of atoms near the grain boundary.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- AC05-00OR22725
- OSTI ID:
- 931712
- Resource Relation:
- Conference: TMS Annual meeting 07, Orlando, FL, USA, 20070225, 20070225
- Country of Publication:
- United States
- Language:
- English
Similar Records
Molecular-dynamics method for the simulation of grain-boundary migration.
Orientation dependence of Ge diffusion along symmetrical [111] tilt grain boundaries in Al
On the relationship between grain-boundary migration and grain-boundary diffusion by molecular-dynamics simulation
Journal Article
·
Tue Dec 01 00:00:00 EST 1998
· Interface Sci.
·
OSTI ID:931712
+1 more
Orientation dependence of Ge diffusion along symmetrical [111] tilt grain boundaries in Al
Journal Article
·
Fri Sep 18 00:00:00 EDT 1998
· Acta Materialia
·
OSTI ID:931712
On the relationship between grain-boundary migration and grain-boundary diffusion by molecular-dynamics simulation
Conference
·
Wed Jul 01 00:00:00 EDT 1998
·
OSTI ID:931712
+1 more