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Title: Slot Die Coating and Conversion of LZO on Rolling Assisted Biaxially Textured Ni-W Substrates With and Without a Very Thin Seed Layer in Low Vacuum

Abstract

Slot die coating and conversion of La2 Zr2 O (LZO) buffer layers were performed on rolling assisted biaxially textured Ni-W with and without thin Y2 O3 seed layers. The slot die coating, drying and processing were all performed using reel to-reel systems. The slot die coated LZO precursor films were then reacted under a variety of conditions and the texture and morphology development were characterized using optical microscopy, scanning and transmission electron microscopy and x-ray diffraction. The conversion conditions were optimized to produce the highest degree of texture in the LZO films. This paper will describe the equipment used for depositing the LZO films and describe the texture and morphology of LZO films optimized for supporting the growth of high Ic (>300 amps per centimeter width) YBCO superconducting films.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [1]
  1. ORNL
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
OE USDOE - Office of Electric Transmission and Distribution
OSTI Identifier:
931678
DOE Contract Number:
DE-AC05-00OR22725
Resource Type:
Conference
Resource Relation:
Conference: 2006 Applied Superconductivity Conference, Seattle, WA, USA, 20060828, 20060901
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; LANTHANUM OXIDES; ZIRCONIUM OXIDES; COATINGS; NICKEL; TUNGSTEN; SUBSTRATES; YTTRIUM OXIDES; TEXTURE; MORPHOLOGY; FILMS; PRECURSOR; SUPERCONDUCTING FILMS

Citation Formats

Heatherly Jr, Lee, Hsu, Huey S, Wee, Sung Hun, Li, Jing, Sathyamurthy, Srivatsan, Paranthaman, Mariappan Parans, and Goyal, Amit. Slot Die Coating and Conversion of LZO on Rolling Assisted Biaxially Textured Ni-W Substrates With and Without a Very Thin Seed Layer in Low Vacuum. United States: N. p., 2007. Web.
Heatherly Jr, Lee, Hsu, Huey S, Wee, Sung Hun, Li, Jing, Sathyamurthy, Srivatsan, Paranthaman, Mariappan Parans, & Goyal, Amit. Slot Die Coating and Conversion of LZO on Rolling Assisted Biaxially Textured Ni-W Substrates With and Without a Very Thin Seed Layer in Low Vacuum. United States.
Heatherly Jr, Lee, Hsu, Huey S, Wee, Sung Hun, Li, Jing, Sathyamurthy, Srivatsan, Paranthaman, Mariappan Parans, and Goyal, Amit. Mon . "Slot Die Coating and Conversion of LZO on Rolling Assisted Biaxially Textured Ni-W Substrates With and Without a Very Thin Seed Layer in Low Vacuum". United States. doi:.
@article{osti_931678,
title = {Slot Die Coating and Conversion of LZO on Rolling Assisted Biaxially Textured Ni-W Substrates With and Without a Very Thin Seed Layer in Low Vacuum},
author = {Heatherly Jr, Lee and Hsu, Huey S and Wee, Sung Hun and Li, Jing and Sathyamurthy, Srivatsan and Paranthaman, Mariappan Parans and Goyal, Amit},
abstractNote = {Slot die coating and conversion of La2 Zr2 O (LZO) buffer layers were performed on rolling assisted biaxially textured Ni-W with and without thin Y2 O3 seed layers. The slot die coating, drying and processing were all performed using reel to-reel systems. The slot die coated LZO precursor films were then reacted under a variety of conditions and the texture and morphology development were characterized using optical microscopy, scanning and transmission electron microscopy and x-ray diffraction. The conversion conditions were optimized to produce the highest degree of texture in the LZO films. This paper will describe the equipment used for depositing the LZO films and describe the texture and morphology of LZO films optimized for supporting the growth of high Ic (>300 amps per centimeter width) YBCO superconducting films.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2007},
month = {Mon Jan 01 00:00:00 EST 2007}
}

Conference:
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  • Crystallization studies were performed of epitaxial La{sub 2}Zr{sub 2}O{sub 7} (LZO) films on biaxially textured Ni-3at.%W substrates having thin Y{sub 2}O{sub 3} (10 nm) seed layers. LZO films were deposited under controlled humid atmosphere using reel-to-reel slot-die coating of chemical solution precursors. Controlled crystallization under various processing conditions has revealed a broad phase space for obtaining high-quality, epitaxial LZO films without microcracks, with no degradation of crystallographic texture and with high surface crystallinity. Crack-free and strong c-axis aligned LZO films with no random orientation were obtained even at relatively low annealing temperatures of 850-950 C in flowing one atmosphere gasmore » mixtures of Ar-4% H2 with an effective oxygen partial pressure of P(O2){approx}10{sup -22} atm. Texture and reflection high-energy electron diffraction analyses reveal that low-temperature-annealed samples have strong cube-on-cube epitaxy and high surface crystallinity, comparable to those of LZO film annealed at high temperature of 1100 C. In addition, these samples have a smoother surface morphology than films annealed at higher temperatures. Ni diffusion rate into the LZO buffer film is also expected to be significantly reduced at the lower annealing temperatures.« less
  • High critical current YBa 2Cu 3O 7-y (referred to as YBCO) coated conductors were fabricated with a layer sequence of YBCO/YSZ/CeO 2/Ni. The cube (100) texture in the starting Ni substrates was obtained by cold rolling followed by recrystallization. A thin CeO 2 (Cerium Oxide) layer with a thickness of 100-200 Å was grown epitaxially on the biaxially textured-Ni substrates using an e-beam evaporation technique. This was followed by the growth of a thick (<= 0.77 µm) YSZ (Yttria Stabilized Zirconia) layer using either e-beam evaporation or rf magnetron sputtering. The e-beam CeO 2 film had a dense microstructure. Themore » microstructure of the e-beam YSZ film was porous whereas the sputtered YSZ film was dense. The YBCO films were grown by pulsed laser deposition on both e-beam and sputtered YSZ layers. A transport critical current density of ~ 1 x l0 6 A/cm 2 at 77 K was obtained for ~ 0.8 µm thick YBCO Rims on both YSZ surfaces in zero field. To demonstrate the quality and compatibility of the e-beam CeO 2 layers; YBCO films were also grown on CeO 2-buffered YSZ (100) single crystal substrates using e-beam co-evaporated Y-BaF 2-Cu precursors followed by a post-annealing process. A transport critical current density of over 1 x lO 6A/cm 2 at 77 K was obtained on a ~ 0.3 µm thick YBCO film in zero field.« less
  • The critical current density J{sub c} flowing in thin YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} (YBCO) films of various thicknesses d has been studied magnetometrically, both as a function of applied field H and temperature T, with a central objective to determine the dominant source of vortex pinning in these materials. The films, grown by a BaF{sub 2} ex situ process and deposited on buffered rolling assisted biaxially textured substrates ('RABiTS') substrates of Ni-5% W, have thicknesses d ranging from 28 nm to 1.5 {micro}m. Isothermal magnetization loops M(H;T) and remanent magnetization M{sub rem}(T) in H=0 were measured with H{parallel}c-axis (i.e., normalmore » to film plane). The resulting J{sub c}(d) values (obtained from a modified critical state model) increase with thickness d, peak near d-120 nm, and thereafter decrease as the films get thicker. For a wide range of temperatures and intermediate fields, we find J{sub c} {infinity} H{sup -{alpha}} with {alpha}-(0.56-0.69) for all materials. This feature can be attributed to pinning by large random defects, which theoretically has power-law exponent {alpha} = 5/8. Calculated values for the size and density of defects are comparable with those observed by TEM in the films. As a function of temperature, we find J{sub c}(T,sf)-[1-(T/T{sub c}){sup 2}]{sup n} with n-1.2-1.4. This points to '{delta}T{sub c} pinning' (pinning that suppresses T{sub c} locally) in these YBCO materials.« less
  • Sol-gel processing of La{sub 2}Zr{sub 2}O{sub 7} (LZO) was used to process buffer layers on biaxially textured Ni-3 at.%W substrates. A reel-to-reel continuous dip-coating unit was used to deposit the solution buffers. Epitaxial LZO films have been obtained through continuous processing on Ni-3 at.%W substrates with strong texture and uniform microstructure. The carbon content in these films were analyzed using proton resonance Rutherford Backscattering (RBS). The process parameters have been modified so as to study the effect of the carbon content in these films towards further growth of YBCO films with better properties. The LZO buffers were used as seedmore » layers for RABiTS with the architecture of CeO{sub 2}/YSZ/LZO/Ni-3 at.%W, and YBCO films with critical current density (J{sub c}) of 1.9 MA/cm{sup 2} at 77K in self-field, and a J{sub c} of 0.34 MA/cm{sup 2} at 0.5 T, have been obtained.« less