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Title: Orientation and growth behavior of CaHfO 3 thin films on non-oxide substrates

Abstract

The growth behavior of CaHfO3 on (001) Ni and Ge substrates was examined. CaHfO3 is a perovskite insulator that is suitable for applications as a buffer layer or gate dielectric. The tendency for CaHfO3 growth on both (001) Ni and (001) Ge substrates is to orient with the CaHfO3 (200)+(121) planes parallel to the surface, which corresponds to the (110) orientation in the pseudo-cubic geometry. This differs from that of CaHfO3 on perovskites, such as (001) LaAlO3, where a pseudo-cube-on-cube orientation is observed.

Authors:
 [1];  [1];  [2]
  1. University of Florida
  2. ORNL
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
931500
DOE Contract Number:
DE-AC05-00OR22725
Resource Type:
Journal Article
Resource Relation:
Journal Name: Materials Letters; Journal Volume: 61; Journal Issue: 16
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CALCIUM OXIDES; HAFNIUM OXIDES; ORIENTATION; PEROVSKITES; SUBSTRATES; THIN FILMS; CRYSTAL GROWTH; NICKEL; GERMANIUM

Citation Formats

Kwon, Y. W., Norton, David P., and Budai, John D. Orientation and growth behavior of CaHfO3 thin films on non-oxide substrates. United States: N. p., 2007. Web. doi:10.1016/j.matlet.2006.11.092.
Kwon, Y. W., Norton, David P., & Budai, John D. Orientation and growth behavior of CaHfO3 thin films on non-oxide substrates. United States. doi:10.1016/j.matlet.2006.11.092.
Kwon, Y. W., Norton, David P., and Budai, John D. Mon . "Orientation and growth behavior of CaHfO3 thin films on non-oxide substrates". United States. doi:10.1016/j.matlet.2006.11.092.
@article{osti_931500,
title = {Orientation and growth behavior of CaHfO3 thin films on non-oxide substrates},
author = {Kwon, Y. W. and Norton, David P. and Budai, John D},
abstractNote = {The growth behavior of CaHfO3 on (001) Ni and Ge substrates was examined. CaHfO3 is a perovskite insulator that is suitable for applications as a buffer layer or gate dielectric. The tendency for CaHfO3 growth on both (001) Ni and (001) Ge substrates is to orient with the CaHfO3 (200)+(121) planes parallel to the surface, which corresponds to the (110) orientation in the pseudo-cubic geometry. This differs from that of CaHfO3 on perovskites, such as (001) LaAlO3, where a pseudo-cube-on-cube orientation is observed.},
doi = {10.1016/j.matlet.2006.11.092},
journal = {Materials Letters},
number = 16,
volume = 61,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2007},
month = {Mon Jan 01 00:00:00 EST 2007}
}
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