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Title: Epitaxial silicon thin films by low-temperature aluminum induced crystallization of amorphous silicon for solar cell applications

Abstract

Aluminum-induced crystallization of hydrogenated amorphous silicon was used to fabricate epitaxial silicon films through solid phase epitaxy. Silicon wafers of (100) orientation were used as the starting crystalline structure for the epitaxial thin film growth. A configuration of c-Si/Al/a-Si:H was used to produce these films through the phenomenon of layer inversion. A thin layer of aluminum (300 nm) was deposited on a silicon wafer by sputtering. On top of this layer, a 300 nm amorphous silicon film was deposited using plasma-enhanced chemical vapor deposition. After annealing the samples at 475 C for 40minutes, a continuous film of crystalline silicon was formed on the silicon substrate. X-ray diffraction, scanning electron microscopy, and cross- sectional transmission electron microscopy were used to characterize the films. Auger depth profiling indicated the formation of a Si/Al mixed phase within the first few minutes of annealing.

Authors:
 [1];  [1];  [1];  [1];  [1];  [2]
  1. University of Arkansas
  2. ORNL
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); High Temperature Materials Laboratory
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
931462
DOE Contract Number:  
DE-AC05-00OR22725
Resource Type:
Conference
Resource Relation:
Conference: IEEE 4th World Conference on Photovoltaic Energy Conversion, Waikoloa, HI, USA, 20060517, 20060517
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; ENERGY CONVERSION; SCANNING ELECTRON MICROSCOPY; SILICON; SOLAR CELLS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION; ALUMINIUM

Citation Formats

Sharif, Khalil, Abu-Safe, Husam H, Naseem, Hameed, Brown, William D, Al-Jassim, Mowafak, and Meyer, III, Harry M. Epitaxial silicon thin films by low-temperature aluminum induced crystallization of amorphous silicon for solar cell applications. United States: N. p., 2006. Web.
Sharif, Khalil, Abu-Safe, Husam H, Naseem, Hameed, Brown, William D, Al-Jassim, Mowafak, & Meyer, III, Harry M. Epitaxial silicon thin films by low-temperature aluminum induced crystallization of amorphous silicon for solar cell applications. United States.
Sharif, Khalil, Abu-Safe, Husam H, Naseem, Hameed, Brown, William D, Al-Jassim, Mowafak, and Meyer, III, Harry M. Sun . "Epitaxial silicon thin films by low-temperature aluminum induced crystallization of amorphous silicon for solar cell applications". United States.
@article{osti_931462,
title = {Epitaxial silicon thin films by low-temperature aluminum induced crystallization of amorphous silicon for solar cell applications},
author = {Sharif, Khalil and Abu-Safe, Husam H and Naseem, Hameed and Brown, William D and Al-Jassim, Mowafak and Meyer, III, Harry M},
abstractNote = {Aluminum-induced crystallization of hydrogenated amorphous silicon was used to fabricate epitaxial silicon films through solid phase epitaxy. Silicon wafers of (100) orientation were used as the starting crystalline structure for the epitaxial thin film growth. A configuration of c-Si/Al/a-Si:H was used to produce these films through the phenomenon of layer inversion. A thin layer of aluminum (300 nm) was deposited on a silicon wafer by sputtering. On top of this layer, a 300 nm amorphous silicon film was deposited using plasma-enhanced chemical vapor deposition. After annealing the samples at 475 C for 40minutes, a continuous film of crystalline silicon was formed on the silicon substrate. X-ray diffraction, scanning electron microscopy, and cross- sectional transmission electron microscopy were used to characterize the films. Auger depth profiling indicated the formation of a Si/Al mixed phase within the first few minutes of annealing.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2006},
month = {1}
}

Conference:
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