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Title: Temperature Influence on the Production of Nanodot Patters by Ion Beam Sputtering of Si(001)

Abstract

The temperature influence

Authors:
 [1];  [2];  [3];  [2];  [4];  [5];  [2];  [6]
  1. Universidad Autonoma de Madrid, Madrid
  2. Instituto de Ciencia de Materiales de Madrid (ICMM)
  3. Centre de Spectrometric Nucleaire et de Spectrometric de Masse, FRANCE
  4. ORNL
  5. Universidad Carlos III, Madrid, Spain
  6. European Synchrotron Radiation Facility (ESRF)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
931327
DOE Contract Number:
DE-AC05-00OR22725
Resource Type:
Journal Article
Resource Relation:
Journal Name: Physical Review B; Journal Volume: 73; Journal Issue: 15
Country of Publication:
United States
Language:
English
Subject:
Temperature; nanodot patterns

Citation Formats

Gago, R., Vazquez, L., Plantevin, O., Sanchez, J. A., Varela del Arco, Maria, Ballesteros, M. C., Albella, J. M., and Metzger, T. H.. Temperature Influence on the Production of Nanodot Patters by Ion Beam Sputtering of Si(001). United States: N. p., 2006. Web. doi:10.1103/PhysRevB.73.155414.
Gago, R., Vazquez, L., Plantevin, O., Sanchez, J. A., Varela del Arco, Maria, Ballesteros, M. C., Albella, J. M., & Metzger, T. H.. Temperature Influence on the Production of Nanodot Patters by Ion Beam Sputtering of Si(001). United States. doi:10.1103/PhysRevB.73.155414.
Gago, R., Vazquez, L., Plantevin, O., Sanchez, J. A., Varela del Arco, Maria, Ballesteros, M. C., Albella, J. M., and Metzger, T. H.. Sun . "Temperature Influence on the Production of Nanodot Patters by Ion Beam Sputtering of Si(001)". United States. doi:10.1103/PhysRevB.73.155414.
@article{osti_931327,
title = {Temperature Influence on the Production of Nanodot Patters by Ion Beam Sputtering of Si(001)},
author = {Gago, R. and Vazquez, L. and Plantevin, O. and Sanchez, J. A. and Varela del Arco, Maria and Ballesteros, M. C. and Albella, J. M. and Metzger, T. H.},
abstractNote = {The temperature influence},
doi = {10.1103/PhysRevB.73.155414},
journal = {Physical Review B},
number = 15,
volume = 73,
place = {United States},
year = {Sun Jan 01 00:00:00 EST 2006},
month = {Sun Jan 01 00:00:00 EST 2006}
}
  • The temperature influence (T=300-625 K) on the production of nanodot patterns by 1 keV Ar{sup +} ion beam sputtering (IBS) of Si(001) is addressed. The surface morphology was studied by atomic force microscopy, transmission electron microscopy, and grazing x-ray scattering techniques. Three different T regimes are observed: (i) First, the pattern does not change significantly up to 425 K, with the nanodot volume being mostly crystalline. (ii) Second, in the 425-525 K range, the pattern is still present but the nanodot height decreases with T and the crystalline core contribution to the dot morphology progressively diminishes. This trend is accompaniedmore » by a continuous decrease of the average interdot distance and an emerging strain in the crystalline lattice of the nanostructures. Above 500 K, the pattern is mainly dominated by the amorphous surface layer. (iii) Finally, the pattern formation is precluded above 550 K, yielding a flat and featureless surface. These results not only have technological implications regarding the control over the pattern characteristics, but also provide relevant information to contrast the existing theories of pattern formation by IBS.« less
  • We grow monocrystalline Fe(001) films and Fe/Si/Fe(001) trilayers by ion-beam sputter epitaxy on GaAs(001) and MgO(001) substrates. Ion-beam sputtering parameters such as substrate presputtering time, substrate temperature, beam voltage, and target angle are optimized for 10-nm-thick Fe(001) films with respect to epitaxial growth and magnetic properties. In situ low-energy electron diffraction patterns confirm the epitaxial and monocrystalline nature of the sputtered films, surprisingly even on untreated and thus oxidized substrates. The magneto-optical Kerr effect and ferromagnetic resonance are employed to investigate the magnetic properties, and the structural properties are characterized by atomic force microscopy and x-ray reflectivity measurements. Using themore » optimized set of parameters that yields the best magnetic properties for single Fe films on GaAs, we deposit epitaxial Fe/Si/Fe(001) structures and observe antiferromagnetic interlayer exchange coupling for epitaxially sputtered Fe/Si/Fe(001) trilayers on GaAs(001). The total coupling strength reaches values of up to 2 mJ/m{sup 2} at a Si thickness of 15 A.« less
  • The connection between the spin structure of antiferromagnetic NiO and the exchange anisotropy observed in NiO/NiFe bilayers is not well understood. For instance, the NiO bulk-terminated (001) surface is compensated, and therefore simple models predict no exchange bias in (001)-oriented NiFe/NiO bilayers. Using a newly developed ion-beam sputtering (IBS) process to deposit NiO exchange-coupled films, we have simultaneously grown polycrystalline and epitaxial NiO/NiFe bilayers. NiO grown on NiFe/MgO is polycrystalline, while NiO grown directly on MgO is epitaxial. The in-plane orientation of the epilayers was confirmed using (hk0) x-ray diffraction. The exchange anisotropy in epitaxial (001)-oriented bilayers is about halfmore » as large as that observed in polycrystalline bilayers. The size of the exchange anisotropy does not depend on the orientation of the bias field with respect to the in-plane NiFe/NiO crystallographic direction, indicating that the same interfacial spin structure is achieved regardless of the bias field direction. These results show that the surface NiO spin structure is different from that of the bulk, and is uncompensated at the interface independent of the crystalline orientation of the bilayer. Results on epitaxial Co/NiO and NiFe/NiCoO bilayers will also be discussed. {copyright} {ital 1997 American Institute of Physics.}« less
  • The formation of self-organized Si nanostructures induced by Mo seeding during normal incidence Ar{sup +} ion bombardment at room temperature is reported. Silicon surfaces without Mo seeding develop only power-law roughness during 1000 eV ion bombardment at normal incidence, in agreement with scaling theory expectations of surface roughening. However, supplying Mo atoms to the surface during ion bombardment seeds the development of highly correlated, nanoscale structures ('dots') that are typically 3 nm high with a spatial wavelength of approximately 30 nm. With time, these saturate and further surface roughening is dominated by the growth of long-wavelength corrugations.
  • The formation of self-organized Si nanostructures induced by Mo seeding during normal incidence Ar{sup +} ion bombardment at room temperature is reported. Silicon surfaces without Mo seeding develop only power-law roughness during 1000 eV ion bombardment at normal incidence, in agreement with scaling theory expectations of surface roughening. However, supplying Mo atoms to the surface during ion bombardment seeds the development of highly correlated, nanoscale structures ('dots') that are typically 3 nm high with a spatial wavelength of approximately 30 nm. With time, these saturate and further surface roughening is dominated by the growth of long-wavelength corrugations.