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Title: Perpendicular-to-Parallel Spin Reorientation in a Mn-Doped GaAs Quantum Canting or Phase Separation

Abstract

It is well known that the magnetic anisotropy in a compressively-strained Mn-doped GaAs film changes from perpendicular to parallel with increasing hole concentration p. We study this reorientation transition at T = 0 for a quantum well with Mn impurities confined to the z = 0 plane. With increasing p, the angle 0 that minimizes the energy E increases continuously from 0 (perpendicular anisotropy) to /2 (parallel anisotropy) within some range of p. The shape of Emin(p) suggests that the quantum well becomes phase separated with regions containing low hole concentrations and perpendicular moments interspersed with other regions containing high hole concentrations and parallel moments. However, consideration of the Coulomb energy costs associated with phase separation suggests that the true magnetic state in the transition region is canted with 0 < < /2.

Authors:
 [1];  [1];  [1];  [2]
  1. ORNL
  2. University of North Dakota, Grand Forks
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
930875
DOE Contract Number:  
DE-AC05-00OR22725
Resource Type:
Journal Article
Resource Relation:
Journal Name: Physical Review Letters; Journal Volume: 98; Journal Issue: 26
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ANISOTROPY; COULOMB ENERGY; QUANTUM WELLS; SPIN ORIENTATION; GALLIUM ARSENIDES; DOPED MATERIALS; MANGANESE; FILMS; PHASE TRANSFORMATIONS; HOLES; Perpendicular; Reorientation; Quantum; Canting or Phase Separation

Citation Formats

Fishman, Randy Scott, Reboredo, Fernando A, Brandt, Alex B, and Moreno, Juana. Perpendicular-to-Parallel Spin Reorientation in a Mn-Doped GaAs Quantum Canting or Phase Separation. United States: N. p., 2007. Web. doi:10.1103/PhysRevLett.98.267203.
Fishman, Randy Scott, Reboredo, Fernando A, Brandt, Alex B, & Moreno, Juana. Perpendicular-to-Parallel Spin Reorientation in a Mn-Doped GaAs Quantum Canting or Phase Separation. United States. doi:10.1103/PhysRevLett.98.267203.
Fishman, Randy Scott, Reboredo, Fernando A, Brandt, Alex B, and Moreno, Juana. Mon . "Perpendicular-to-Parallel Spin Reorientation in a Mn-Doped GaAs Quantum Canting or Phase Separation". United States. doi:10.1103/PhysRevLett.98.267203.
@article{osti_930875,
title = {Perpendicular-to-Parallel Spin Reorientation in a Mn-Doped GaAs Quantum Canting or Phase Separation},
author = {Fishman, Randy Scott and Reboredo, Fernando A and Brandt, Alex B and Moreno, Juana},
abstractNote = {It is well known that the magnetic anisotropy in a compressively-strained Mn-doped GaAs film changes from perpendicular to parallel with increasing hole concentration p. We study this reorientation transition at T = 0 for a quantum well with Mn impurities confined to the z = 0 plane. With increasing p, the angle 0 that minimizes the energy E increases continuously from 0 (perpendicular anisotropy) to /2 (parallel anisotropy) within some range of p. The shape of Emin(p) suggests that the quantum well becomes phase separated with regions containing low hole concentrations and perpendicular moments interspersed with other regions containing high hole concentrations and parallel moments. However, consideration of the Coulomb energy costs associated with phase separation suggests that the true magnetic state in the transition region is canted with 0 < < /2.},
doi = {10.1103/PhysRevLett.98.267203},
journal = {Physical Review Letters},
number = 26,
volume = 98,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2007},
month = {Mon Jan 01 00:00:00 EST 2007}
}