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Title: Stacking Faults in YBa 2Cu 3O 7-x: Measurement Using X-Ray Diffraction and Effects on Critical Current

Abstract

The density n of stacking faults (SFs) in epitaxial YBa2Cu3O7-x (Y123) films, consisting of extra CuO planes, is measured by fitting x-ray diffraction patterns using a random stacking model. The SF density is n=0.068 nm-1 in films grown by metal-organic deposition on textured templates and optimized for high Ic. The presence of SF is correlated with pinning of magnetic field (H) applied in the Y123 ab plane. SF can be nearly eliminated by a high temperature anneal, or by adding excess Dy, resulting in Ic which is nearly independent of the orientation of H.

Authors:
 [1];  [1];  [1];  [1];  [2];  [2]
  1. ORNL
  2. American Superconductor Corporation, Westborough, MA
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
OE USDOE - Office of Electric Transmission and Distribution; USDOE Office of Science (SC)
OSTI Identifier:
930773
DOE Contract Number:
DE-AC05-00OR22725
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 89
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRITICAL CURRENT; STACKING FAULTS; X-RAY DIFFRACTION; YTTRIUM OXIDES; BARIUM OXIDES; COPPER OXIDES; DISTRIBUTION

Citation Formats

Specht, Eliot D, Goyal, Amit, Li, Jing, Martin, Patrick M, Li, Xiaoping, and Rupich, Marty. Stacking Faults in YBa2Cu3O7-x: Measurement Using X-Ray Diffraction and Effects on Critical Current. United States: N. p., 2006. Web. doi:10.1063/1.2364185.
Specht, Eliot D, Goyal, Amit, Li, Jing, Martin, Patrick M, Li, Xiaoping, & Rupich, Marty. Stacking Faults in YBa2Cu3O7-x: Measurement Using X-Ray Diffraction and Effects on Critical Current. United States. doi:10.1063/1.2364185.
Specht, Eliot D, Goyal, Amit, Li, Jing, Martin, Patrick M, Li, Xiaoping, and Rupich, Marty. Sun . "Stacking Faults in YBa2Cu3O7-x: Measurement Using X-Ray Diffraction and Effects on Critical Current". United States. doi:10.1063/1.2364185.
@article{osti_930773,
title = {Stacking Faults in YBa2Cu3O7-x: Measurement Using X-Ray Diffraction and Effects on Critical Current},
author = {Specht, Eliot D and Goyal, Amit and Li, Jing and Martin, Patrick M and Li, Xiaoping and Rupich, Marty},
abstractNote = {The density n of stacking faults (SFs) in epitaxial YBa2Cu3O7-x (Y123) films, consisting of extra CuO planes, is measured by fitting x-ray diffraction patterns using a random stacking model. The SF density is n=0.068 nm-1 in films grown by metal-organic deposition on textured templates and optimized for high Ic. The presence of SF is correlated with pinning of magnetic field (H) applied in the Y123 ab plane. SF can be nearly eliminated by a high temperature anneal, or by adding excess Dy, resulting in Ic which is nearly independent of the orientation of H.},
doi = {10.1063/1.2364185},
journal = {Applied Physics Letters},
number = ,
volume = 89,
place = {United States},
year = {Sun Jan 01 00:00:00 EST 2006},
month = {Sun Jan 01 00:00:00 EST 2006}
}