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Title: Raman Spectroscopy Study of Zn1-xMnxSe Thin Films Under High-Pressure

Abstract

Raman spectroscopy was used to study phase transitions of substrate-free Zn1-xMnxSe thin films, x=0.07, 0.17, and 0.29, under high pressure up around 20.0 GPa at ambient temperature. One Raman mode, transverse optical split mode, was observed before metallization at 2.9+/-1.0, 2.4+/-0.8, and 2.1+/-0.6 GPa for Zn0.71Mn0.29Se, Zn0.83Mn0.17Se, and Zn0.93Mn0.07Se thin films, respectively. The semiconductor-metallic transition pressure for Zn0.71Mn0.29Se, Zn0.83Mn0.17Se, and Zn0.93Mn0.07Se thin films was observed at 9.4+/-0.4, 10.9+/-0.6, and 11.7+/-0.2 GPa, respectively. It was found that the relation of the ionicity and the reduction of the pressure in transition from semiconductor to metal phase for Zn1-xMnxSe thin films was not the same as that of bulk crystals. The percentage of the increasing of the Gr{umlt u}neison parameter of longitudinal optical mode for semiconductor to metal phase transition might be the important factor inherently related to the reduction of phase transition pressure for substrate-free Zn1-xMnxSe thin film systems.

Authors:
;
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL) National Synchrotron Light Source
Sponsoring Org.:
Doe - Office Of Science
OSTI Identifier:
930679
Report Number(s):
BNL-81194-2008-JA
Journal ID: ISSN 0021-8979; JAPIAU; TRN: US200901%%27
DOE Contract Number:
DE-AC02-98CH10886
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 101
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; MANGANESE SELENIDES; ZINC SELENIDES; AMBIENT TEMPERATURE; OPTICAL MODES; RAMAN SPECTROSCOPY; THIN FILMS; PHASE TRANSFORMATIONS; PRESSURE RANGE GIGA PA; national synchrotron light source

Citation Formats

Lin,C., and Chuu, D.. Raman Spectroscopy Study of Zn1-xMnxSe Thin Films Under High-Pressure. United States: N. p., 2007. Web. doi:10.1063/1.2735679.
Lin,C., & Chuu, D.. Raman Spectroscopy Study of Zn1-xMnxSe Thin Films Under High-Pressure. United States. doi:10.1063/1.2735679.
Lin,C., and Chuu, D.. Mon . "Raman Spectroscopy Study of Zn1-xMnxSe Thin Films Under High-Pressure". United States. doi:10.1063/1.2735679.
@article{osti_930679,
title = {Raman Spectroscopy Study of Zn1-xMnxSe Thin Films Under High-Pressure},
author = {Lin,C. and Chuu, D.},
abstractNote = {Raman spectroscopy was used to study phase transitions of substrate-free Zn1-xMnxSe thin films, x=0.07, 0.17, and 0.29, under high pressure up around 20.0 GPa at ambient temperature. One Raman mode, transverse optical split mode, was observed before metallization at 2.9+/-1.0, 2.4+/-0.8, and 2.1+/-0.6 GPa for Zn0.71Mn0.29Se, Zn0.83Mn0.17Se, and Zn0.93Mn0.07Se thin films, respectively. The semiconductor-metallic transition pressure for Zn0.71Mn0.29Se, Zn0.83Mn0.17Se, and Zn0.93Mn0.07Se thin films was observed at 9.4+/-0.4, 10.9+/-0.6, and 11.7+/-0.2 GPa, respectively. It was found that the relation of the ionicity and the reduction of the pressure in transition from semiconductor to metal phase for Zn1-xMnxSe thin films was not the same as that of bulk crystals. The percentage of the increasing of the Gr{umlt u}neison parameter of longitudinal optical mode for semiconductor to metal phase transition might be the important factor inherently related to the reduction of phase transition pressure for substrate-free Zn1-xMnxSe thin film systems.},
doi = {10.1063/1.2735679},
journal = {Journal of Applied Physics},
number = ,
volume = 101,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2007},
month = {Mon Jan 01 00:00:00 EST 2007}
}