Photoinduced Volume Change in Arsenic Chalcogenides by Band-Gap Light
Photoinduced structural changes in molecular semicrystalline As4Se3 films have been characterized by extended x-ray absorption fine structure and x-ray diffraction under in situ band-gap laser illumination. Transient and permanent changes in the local and long-range structure have been determined quantitatively. In contrast to fully amorphous arsenic selenide films, a photoinduced contraction has been observed in semicrystalline As4Se3 films. A comprehensive phenomenological model is proposed for the photoinduced volume change in As-based chalcogenides. This model is based on two competing processes viz. intermolecular interaction through Coulombic repulsive force that results in photoexpansion, and cross-linking of molecular units through bond switching that causes photocontraction. A guideline is presented for selecting chalcogenide glass composition with specific photoinduced volume change characteristics.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source
- Sponsoring Organization:
- Doe - Office Of Science
- DOE Contract Number:
- DE-AC02-98CH10886
- OSTI ID:
- 930675
- Report Number(s):
- BNL-81190-2008-JA; TRN: US200901%%26
- Journal Information:
- Physical Review B: Condensed Matter and Materials Physics, Vol. 74
- Country of Publication:
- United States
- Language:
- English
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