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Title: Observations of the Influence of Threading Dislocations on the Recombination Enhanced Partial Dislocation Glide in 4H-Silicon Carbide Epitaxial Layers

Abstract

Electron-hole recombination enhanced glide of Shockley partial dislocations bounding expanding stacking faults and their interactions with threading dislocations have been studied in 4H- silicon carbide epitaxial layers. The mobile silicon-core Shockley partial dislocations bounding the stacking faults are observed to cut through threading edge dislocations, leaving no trailing dislocation segments in their wake. When the Shockley partial dislocations interact with threading screw dislocations, 30 degree partial dislocation dipoles are initially deposited in their wake. These partial dislocation dipoles quickly and spontaneously snap into screw orientation whereupon they cross slip and annihilate, leaving a prismatic stacking fault on the (2{ovr 11}0) plane.

Authors:
; ; ;
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL) National Synchrotron Light Source
Sponsoring Org.:
Doe - Office Of Science
OSTI Identifier:
930668
Report Number(s):
BNL-81165-2008-JA
Journal ID: ISSN 0003-6951; APPLAB; TRN: US200901%%172
DOE Contract Number:
DE-AC02-98CH10886
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 90
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CARBIDES; DIPOLES; DISLOCATIONS; EDGE DISLOCATIONS; ORIENTATION; RECOMBINATION; SCREW DISLOCATIONS; SILICON CARBIDES; SLIP; STACKING FAULTS; national synchrotron light source

Citation Formats

Chen,Y., Dudley, M., Liu, K., and Stahlbush, R. Observations of the Influence of Threading Dislocations on the Recombination Enhanced Partial Dislocation Glide in 4H-Silicon Carbide Epitaxial Layers. United States: N. p., 2007. Web. doi:10.1063/1.2734499.
Chen,Y., Dudley, M., Liu, K., & Stahlbush, R. Observations of the Influence of Threading Dislocations on the Recombination Enhanced Partial Dislocation Glide in 4H-Silicon Carbide Epitaxial Layers. United States. doi:10.1063/1.2734499.
Chen,Y., Dudley, M., Liu, K., and Stahlbush, R. Mon . "Observations of the Influence of Threading Dislocations on the Recombination Enhanced Partial Dislocation Glide in 4H-Silicon Carbide Epitaxial Layers". United States. doi:10.1063/1.2734499.
@article{osti_930668,
title = {Observations of the Influence of Threading Dislocations on the Recombination Enhanced Partial Dislocation Glide in 4H-Silicon Carbide Epitaxial Layers},
author = {Chen,Y. and Dudley, M. and Liu, K. and Stahlbush, R.},
abstractNote = {Electron-hole recombination enhanced glide of Shockley partial dislocations bounding expanding stacking faults and their interactions with threading dislocations have been studied in 4H- silicon carbide epitaxial layers. The mobile silicon-core Shockley partial dislocations bounding the stacking faults are observed to cut through threading edge dislocations, leaving no trailing dislocation segments in their wake. When the Shockley partial dislocations interact with threading screw dislocations, 30 degree partial dislocation dipoles are initially deposited in their wake. These partial dislocation dipoles quickly and spontaneously snap into screw orientation whereupon they cross slip and annihilate, leaving a prismatic stacking fault on the (2{ovr 11}0) plane.},
doi = {10.1063/1.2734499},
journal = {Applied Physics Letters},
number = ,
volume = 90,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2007},
month = {Mon Jan 01 00:00:00 EST 2007}
}