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Title: Thin Film Solid-State Reactions Forming Carbides as Contact Materials for Carbon-Containing Semiconductors

Abstract

Metal carbides are good candidates to contact carbon-based semiconductors (SiC, diamond, and carbon nanotubes). Here, we report on an in situ study of carbide formation during the solid-state reaction between thin films. The solid-state reaction was examined between 11 transition metals (W, Mo, Fe, Cr, V, Nb, Mn, Ti, Ta, Zr, and Hf) and an amorphous carbon layer. Capping layers (C or TiN) of different thicknesses were applied to prevent oxidation. Carbide formation is evidenced for nine metals and the phases formed have been identified (for a temperature ranging from 100 to 1100 C). W first forms W{sub 2}C and then WC; Mo forms Mo{sub 2}C; Fe forms Fe{sub 3}C; Cr first forms metastable phases Cr{sub 2}C and Cr{sub 3}C{sub 2-x}, and finally forms Cr{sub 3}C{sub 2}; V forms VC{sub x}; Nb transforms into Nb{sub 2}C followed by NbC; Ti forms TiC; Ta first forms Ta{sub 2}C and then TaC; and Hf transforms into HfC. The activation energy for the formation of the various carbide phases has been obtained by in situ x-ray diffraction.

Authors:
; ; ;
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL) National Synchrotron Light Source
Sponsoring Org.:
Doe - Office Of Science
OSTI Identifier:
930660
Report Number(s):
BNL-81142-2008-JA
Journal ID: ISSN 0021-8979; JAPIAU; TRN: US200901%%19
DOE Contract Number:  
DE-AC02-98CH10886
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 101
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; TRANSITION ELEMENT COMPOUNDS; CARBIDES; CARBON; THIN FILMS; SEMICONDUCTOR DEVICES; ELECTRIC CONTACTS; ACTIVATION ENERGY; national synchrotron light source

Citation Formats

Leroy,W., Detavernier, C., Van Meirhaeghe, R., and Lavoie, C. Thin Film Solid-State Reactions Forming Carbides as Contact Materials for Carbon-Containing Semiconductors. United States: N. p., 2007. Web. doi:10.1063/1.2561173.
Leroy,W., Detavernier, C., Van Meirhaeghe, R., & Lavoie, C. Thin Film Solid-State Reactions Forming Carbides as Contact Materials for Carbon-Containing Semiconductors. United States. doi:10.1063/1.2561173.
Leroy,W., Detavernier, C., Van Meirhaeghe, R., and Lavoie, C. Mon . "Thin Film Solid-State Reactions Forming Carbides as Contact Materials for Carbon-Containing Semiconductors". United States. doi:10.1063/1.2561173.
@article{osti_930660,
title = {Thin Film Solid-State Reactions Forming Carbides as Contact Materials for Carbon-Containing Semiconductors},
author = {Leroy,W. and Detavernier, C. and Van Meirhaeghe, R. and Lavoie, C.},
abstractNote = {Metal carbides are good candidates to contact carbon-based semiconductors (SiC, diamond, and carbon nanotubes). Here, we report on an in situ study of carbide formation during the solid-state reaction between thin films. The solid-state reaction was examined between 11 transition metals (W, Mo, Fe, Cr, V, Nb, Mn, Ti, Ta, Zr, and Hf) and an amorphous carbon layer. Capping layers (C or TiN) of different thicknesses were applied to prevent oxidation. Carbide formation is evidenced for nine metals and the phases formed have been identified (for a temperature ranging from 100 to 1100 C). W first forms W{sub 2}C and then WC; Mo forms Mo{sub 2}C; Fe forms Fe{sub 3}C; Cr first forms metastable phases Cr{sub 2}C and Cr{sub 3}C{sub 2-x}, and finally forms Cr{sub 3}C{sub 2}; V forms VC{sub x}; Nb transforms into Nb{sub 2}C followed by NbC; Ti forms TiC; Ta first forms Ta{sub 2}C and then TaC; and Hf transforms into HfC. The activation energy for the formation of the various carbide phases has been obtained by in situ x-ray diffraction.},
doi = {10.1063/1.2561173},
journal = {Journal of Applied Physics},
number = ,
volume = 101,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2007},
month = {Mon Jan 01 00:00:00 EST 2007}
}