Study of the Defect Eliminations Mechanisms in Aspect Ratio Trapping Ge Growth

Bai, J; Park, J; Cheng, Z; Curtin, M; Adekore, B; Carroll, M; Lochtefeld, A; Dudley, M

doi:10.1063/1.2711276

Title: Study of the Defect Eliminations Mechanisms in Aspect Ratio Trapping Ge Growth

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Abstract

Recent research has demonstrated the effectiveness of the 'aspect ratio trapping' technique for eliminating threading dislocations in Ge grown selectively in submicron trenches on Si substrates. In this letter, analysis of the mechanisms by which dislocation elimination is achieved has been carried out. Detailed transmission electron microscopy studies reveal that facets, when formed early in the growth process, play a dominant role in determining the configurations of threading dislocations in the films. These dislocations are shown to behave as 'growth dislocations', which are replicated during growth approximately along the facet normal and so are deflected out from the center of the selective epitaxial regions.

Authors:: Bai, J; Park, J; Cheng, Z; Curtin, M; Adekore, B; Carroll, M; Lochtefeld, A; Dudley, M

Publication Date:: Mon Jan 01 00:00:00 EST 2007

Research Org.:: Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source

Sponsoring Org.:: Doe - Office Of Science

OSTI Identifier:: 930554

Report Number(s):: BNL-80677-2008-JA
Journal ID: ISSN 0003-6951; APPLAB; TRN: US200904%%586

DOE Contract Number:: DE-AC02-98CH10886

Resource Type:: Journal Article

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 90; Journal Issue: 10; Journal ID: ISSN 0003-6951

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; GERMANIUM; CRYSTAL GROWTH; DISLOCATIONS; SUBSTRATES; SILICON; MITIGATION; national synchrotron light source

Citation Formats


                    Bai, J, Park, J, Cheng, Z, Curtin, M, Adekore, B, Carroll, M, Lochtefeld, A, and Dudley, M. Study of the Defect Eliminations Mechanisms in Aspect Ratio Trapping Ge Growth.  United States: N. p., 2007. 
        Web.  doi:10.1063/1.2711276.

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                    Bai, J, Park, J, Cheng, Z, Curtin, M, Adekore, B, Carroll, M, Lochtefeld, A, & Dudley, M. Study of the Defect Eliminations Mechanisms in Aspect Ratio Trapping Ge Growth.  United States.  https://doi.org/10.1063/1.2711276

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                    Bai, J, Park, J, Cheng, Z, Curtin, M, Adekore, B, Carroll, M, Lochtefeld, A, and Dudley, M. 2007.  
        "Study of the Defect Eliminations Mechanisms in Aspect Ratio Trapping Ge Growth".  United States.  https://doi.org/10.1063/1.2711276.

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@article{osti_930554,

  title        = {Study of the Defect Eliminations Mechanisms in Aspect Ratio Trapping Ge Growth},

  author       = {Bai, J and Park, J and Cheng, Z and Curtin, M and Adekore, B and Carroll, M and Lochtefeld, A and Dudley, M},

  abstractNote = {Recent research has demonstrated the effectiveness of the 'aspect ratio trapping' technique for eliminating threading dislocations in Ge grown selectively in submicron trenches on Si substrates. In this letter, analysis of the mechanisms by which dislocation elimination is achieved has been carried out. Detailed transmission electron microscopy studies reveal that facets, when formed early in the growth process, play a dominant role in determining the configurations of threading dislocations in the films. These dislocations are shown to behave as 'growth dislocations', which are replicated during growth approximately along the facet normal and so are deflected out from the center of the selective epitaxial regions.},

  doi          = {10.1063/1.2711276},

  url          = {https://www.osti.gov/biblio/930554},
  journal      = {Applied Physics Letters},

  issn         = {0003-6951},

  number       = 10,

  volume       = 90,

  place        = {United States},

  year         = {Mon Jan 01 00:00:00 EST 2007},

  month        = {Mon Jan 01 00:00:00 EST 2007}

}

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