Pulsed Laser Deposition and Characterization of Hf Based High-k Dielectric Thin Films
The continuous downward scaling of the complementary metal oxide semiconductor (CMOS) devices has enabled the Si-based semiconductor industry to meet the technological requirements such as high performance and low power consumption. However, the ever-shrinking dimensions of the active device, metal-oxide-semiconductor-field-effect-transistor (MOSFET), in the circuit create other physical challenges. The industry standard SiO{sub 2} for the gate region is reaching to its physical limits. New materials with higher dielectric constant are needed to replace the silicon dioxide in these gate regions. One of the candidates for this replacement is Hf-based oxides. In this project, we have used pulsed laser deposition (PLD) to synthesize Hf-based high-k dielectric films on Si single crystal substrates with varying deposition parameters and mixtures of HfO{sub 2} and ZrO{sub 2} then used X-ray absorption fine-structure spectroscopy (XAFS) in order to probe the local structure around the Hf metal. The local structural information extracted through XAFS has been correlated with the deposition parameters such as the substrate temperature and the HfO{sub 2}, to ZrO{sub 2} ratio in the mixtures.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source
- Sponsoring Organization:
- Doe - Office Of Science
- DOE Contract Number:
- DE-AC02-98CH10886
- OSTI ID:
- 930549
- Report Number(s):
- BNL-80658-2008-JA; THSFAP; TRN: US200904%%781
- Journal Information:
- Thin Solid Films, Vol. 515; ISSN 0040-6090
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ABSORPTION SPECTROSCOPY
DEPOSITION
DIELECTRIC MATERIALS
DIMENSIONS
FINE STRUCTURE
HAFNIUM OXIDES
LASERS
MIXTURES
MONOCRYSTALS
MOSFET
OXIDES
PERFORMANCE
PERMITTIVITY
SEMICONDUCTOR DEVICES
SILICON
SPECTROSCOPY
SUBSTRATES
THIN FILMS
X-RAY SPECTROSCOPY
ZIRCONIUM OXIDES
national synchrotron light source