skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Pulsed Laser Deposition and Characterization of Hf Based High-k Dielectric Thin Films

Abstract

The continuous downward scaling of the complementary metal oxide semiconductor (CMOS) devices has enabled the Si-based semiconductor industry to meet the technological requirements such as high performance and low power consumption. However, the ever-shrinking dimensions of the active device, metal-oxide-semiconductor-field-effect-transistor (MOSFET), in the circuit create other physical challenges. The industry standard SiO{sub 2} for the gate region is reaching to its physical limits. New materials with higher dielectric constant are needed to replace the silicon dioxide in these gate regions. One of the candidates for this replacement is Hf-based oxides. In this project, we have used pulsed laser deposition (PLD) to synthesize Hf-based high-k dielectric films on Si single crystal substrates with varying deposition parameters and mixtures of HfO{sub 2} and ZrO{sub 2} then used X-ray absorption fine-structure spectroscopy (XAFS) in order to probe the local structure around the Hf metal. The local structural information extracted through XAFS has been correlated with the deposition parameters such as the substrate temperature and the HfO{sub 2}, to ZrO{sub 2} ratio in the mixtures.

Authors:
; ; ; ; ; ;
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL) National Synchrotron Light Source
Sponsoring Org.:
Doe - Office Of Science
OSTI Identifier:
930549
Report Number(s):
BNL-80658-2008-JA
Journal ID: ISSN 0040-6090; THSFAP; TRN: US200904%%781
DOE Contract Number:
DE-AC02-98CH10886
Resource Type:
Journal Article
Resource Relation:
Journal Name: Thin Solid Films; Journal Volume: 515
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION SPECTROSCOPY; DEPOSITION; DIELECTRIC MATERIALS; DIMENSIONS; FINE STRUCTURE; HAFNIUM OXIDES; LASERS; MIXTURES; MONOCRYSTALS; MOSFET; OXIDES; PERFORMANCE; PERMITTIVITY; SEMICONDUCTOR DEVICES; SILICON; SPECTROSCOPY; SUBSTRATES; THIN FILMS; X-RAY SPECTROSCOPY; ZIRCONIUM OXIDES; national synchrotron light source

Citation Formats

Sahiner,M., Woicik, J., Gao, J., McKeown, P., Croft, M., Gartman, M., and Benapfl, B. Pulsed Laser Deposition and Characterization of Hf Based High-k Dielectric Thin Films. United States: N. p., 2007. Web. doi:10.1016/j.tsf.2006.11.171.
Sahiner,M., Woicik, J., Gao, J., McKeown, P., Croft, M., Gartman, M., & Benapfl, B. Pulsed Laser Deposition and Characterization of Hf Based High-k Dielectric Thin Films. United States. doi:10.1016/j.tsf.2006.11.171.
Sahiner,M., Woicik, J., Gao, J., McKeown, P., Croft, M., Gartman, M., and Benapfl, B. Mon . "Pulsed Laser Deposition and Characterization of Hf Based High-k Dielectric Thin Films". United States. doi:10.1016/j.tsf.2006.11.171.
@article{osti_930549,
title = {Pulsed Laser Deposition and Characterization of Hf Based High-k Dielectric Thin Films},
author = {Sahiner,M. and Woicik, J. and Gao, J. and McKeown, P. and Croft, M. and Gartman, M. and Benapfl, B.},
abstractNote = {The continuous downward scaling of the complementary metal oxide semiconductor (CMOS) devices has enabled the Si-based semiconductor industry to meet the technological requirements such as high performance and low power consumption. However, the ever-shrinking dimensions of the active device, metal-oxide-semiconductor-field-effect-transistor (MOSFET), in the circuit create other physical challenges. The industry standard SiO{sub 2} for the gate region is reaching to its physical limits. New materials with higher dielectric constant are needed to replace the silicon dioxide in these gate regions. One of the candidates for this replacement is Hf-based oxides. In this project, we have used pulsed laser deposition (PLD) to synthesize Hf-based high-k dielectric films on Si single crystal substrates with varying deposition parameters and mixtures of HfO{sub 2} and ZrO{sub 2} then used X-ray absorption fine-structure spectroscopy (XAFS) in order to probe the local structure around the Hf metal. The local structural information extracted through XAFS has been correlated with the deposition parameters such as the substrate temperature and the HfO{sub 2}, to ZrO{sub 2} ratio in the mixtures.},
doi = {10.1016/j.tsf.2006.11.171},
journal = {Thin Solid Films},
number = ,
volume = 515,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2007},
month = {Mon Jan 01 00:00:00 EST 2007}
}