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Title: Chemical Vapor Deposition of Silicon Carbide Epitaxial Films and their Characterization

Abstract

A chemical vapor deposition (CVD) system was designed and fabricated in our laboratory and SiC homo-epitaxial layers were grown in the CVD process using silicon tetrachloride and propane precursors with hydrogen as a carrier gas. The temperature field was generated using numerical modeling. Gas flow rates, temperature field, and the gradients are found to influence the growth rates of the epitaxial layers. Growth rates were found to increase as the temperature increased at high carrier gas flow rate, while at lower carrier gas flow rate, growth rates were observed to decrease as the temperature increased. Based on the equilibrium model, 'thermodynamically controlled growth' accounts for the growth rate reduction. The grown epitaxial layers were characterized using various techniques. Reduction in the threading screw dislocation (SD) density in the epilayers was observed. Suitable models were developed for explaining the reduction in the SD density as well as the conversion of basal plane dislocations (BPDs) into threading edge dislocations (TEDs).

Authors:
; ; ; ;
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL) National Synchrotron Light Source
Sponsoring Org.:
Doe - Office Of Science
OSTI Identifier:
930533
Report Number(s):
BNL-80574-2008-JA
Journal ID: ISSN 0361-5235; JECMA5; TRN: US200904%%773
DOE Contract Number:  
DE-AC02-98CH10886
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Electronic Materials; Journal Volume: 35; Journal Issue: 4
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 08 HYDROGEN; CHEMICAL VAPOR DEPOSITION; DEFECTS; DISLOCATIONS; EDGE DISLOCATIONS; GAS FLOW; HYDROGEN; PROPANE; SCREW DISLOCATIONS; SILICON; SILICON CARBIDES; SIMULATION; national synchrotron light source

Citation Formats

Dhanaraj,G., Chen, Y., Dudley, M., Cai, D., and Zhang, H. Chemical Vapor Deposition of Silicon Carbide Epitaxial Films and their Characterization. United States: N. p., 2007. Web. doi:10.1007/s11664-006-0084-2.
Dhanaraj,G., Chen, Y., Dudley, M., Cai, D., & Zhang, H. Chemical Vapor Deposition of Silicon Carbide Epitaxial Films and their Characterization. United States. doi:10.1007/s11664-006-0084-2.
Dhanaraj,G., Chen, Y., Dudley, M., Cai, D., and Zhang, H. Mon . "Chemical Vapor Deposition of Silicon Carbide Epitaxial Films and their Characterization". United States. doi:10.1007/s11664-006-0084-2.
@article{osti_930533,
title = {Chemical Vapor Deposition of Silicon Carbide Epitaxial Films and their Characterization},
author = {Dhanaraj,G. and Chen, Y. and Dudley, M. and Cai, D. and Zhang, H.},
abstractNote = {A chemical vapor deposition (CVD) system was designed and fabricated in our laboratory and SiC homo-epitaxial layers were grown in the CVD process using silicon tetrachloride and propane precursors with hydrogen as a carrier gas. The temperature field was generated using numerical modeling. Gas flow rates, temperature field, and the gradients are found to influence the growth rates of the epitaxial layers. Growth rates were found to increase as the temperature increased at high carrier gas flow rate, while at lower carrier gas flow rate, growth rates were observed to decrease as the temperature increased. Based on the equilibrium model, 'thermodynamically controlled growth' accounts for the growth rate reduction. The grown epitaxial layers were characterized using various techniques. Reduction in the threading screw dislocation (SD) density in the epilayers was observed. Suitable models were developed for explaining the reduction in the SD density as well as the conversion of basal plane dislocations (BPDs) into threading edge dislocations (TEDs).},
doi = {10.1007/s11664-006-0084-2},
journal = {Journal of Electronic Materials},
number = 4,
volume = 35,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2007},
month = {Mon Jan 01 00:00:00 EST 2007}
}