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Title: Wavelength Tunability of Ion-Bombardment-Induced Ripples on Sapphire

Abstract

A study of ripple formation on sapphire surfaces by 300-2000 eV Ar{sup +} ion bombardment is presented. Surface characterization by in-situ synchrotron grazing incidence small angle x-ray scattering and ex-situ atomic force microscopy is performed in order to study the wavelength of ripples formed on sapphire (0001) surfaces. We find that the wavelength can be varied over a remarkably wide range -- nearly two orders of magnitude -- by changing the ion incidence angle. Within the linear theory regime, the ion induced viscous flow smoothing mechanism explains the general trends of the ripple wavelength at low temperature and incidence angles larger than 30{sup o}. In this model, relaxation is confined to a few nm thick damaged surface layer. The behavior at high temperature suggests relaxation by surface diffusion. However, strong smoothing is inferred from the observed ripple wavelength near normal incidence, which is not consistent with either surface diffusion or viscous flow relaxation.

Authors:
; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL) National Synchrotron Light Source
Sponsoring Org.:
Doe - Office Of Science
OSTI Identifier:
930497
Report Number(s):
BNL-80432-2008-JA
Journal ID: ISSN 1098-0121; TRN: US0901402
DOE Contract Number:
DE-AC02-98CH10886
Resource Type:
Journal Article
Resource Relation:
Journal Name: Physical Review B: Condensed Matter and Materials Physics; Journal Volume: 75
Country of Publication:
United States
Language:
English
Subject:
43 PARTICLE ACCELERATORS; ATOMIC FORCE MICROSCOPY; DIFFUSION; GRAZING INCIDENCE TOMOGRAPHY; INCIDENCE ANGLE; RELAXATION; SAPPHIRE; SMALL ANGLE SCATTERING; SYNCHROTRON RADIATION; VISCOUS FLOW; WAVELENGTHS; national synchrotron light source

Citation Formats

Zhou,H., Wang, Y., Zhou, L., Headrick, R., Ozcan, A., Wang, Y., Ozaydin, G., Ludwig, Jr., K., and Siddons, D.. Wavelength Tunability of Ion-Bombardment-Induced Ripples on Sapphire. United States: N. p., 2007. Web. doi:10.1103/PhysRevB.75.155416.
Zhou,H., Wang, Y., Zhou, L., Headrick, R., Ozcan, A., Wang, Y., Ozaydin, G., Ludwig, Jr., K., & Siddons, D.. Wavelength Tunability of Ion-Bombardment-Induced Ripples on Sapphire. United States. doi:10.1103/PhysRevB.75.155416.
Zhou,H., Wang, Y., Zhou, L., Headrick, R., Ozcan, A., Wang, Y., Ozaydin, G., Ludwig, Jr., K., and Siddons, D.. Mon . "Wavelength Tunability of Ion-Bombardment-Induced Ripples on Sapphire". United States. doi:10.1103/PhysRevB.75.155416.
@article{osti_930497,
title = {Wavelength Tunability of Ion-Bombardment-Induced Ripples on Sapphire},
author = {Zhou,H. and Wang, Y. and Zhou, L. and Headrick, R. and Ozcan, A. and Wang, Y. and Ozaydin, G. and Ludwig, Jr., K. and Siddons, D.},
abstractNote = {A study of ripple formation on sapphire surfaces by 300-2000 eV Ar{sup +} ion bombardment is presented. Surface characterization by in-situ synchrotron grazing incidence small angle x-ray scattering and ex-situ atomic force microscopy is performed in order to study the wavelength of ripples formed on sapphire (0001) surfaces. We find that the wavelength can be varied over a remarkably wide range -- nearly two orders of magnitude -- by changing the ion incidence angle. Within the linear theory regime, the ion induced viscous flow smoothing mechanism explains the general trends of the ripple wavelength at low temperature and incidence angles larger than 30{sup o}. In this model, relaxation is confined to a few nm thick damaged surface layer. The behavior at high temperature suggests relaxation by surface diffusion. However, strong smoothing is inferred from the observed ripple wavelength near normal incidence, which is not consistent with either surface diffusion or viscous flow relaxation.},
doi = {10.1103/PhysRevB.75.155416},
journal = {Physical Review B: Condensed Matter and Materials Physics},
number = ,
volume = 75,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2007},
month = {Mon Jan 01 00:00:00 EST 2007}
}