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Title: Defect Reduction by Suppression of Pi-bonding Coupling in Nano- and Non-Crystalline High-(medium) -k gate Dielectrics

Abstract

This paper identifies two-different regimes of nanocrystallinity: (i) thin films with nanocrystallites >3 nm, and (ii) thin films with nanocrystallites {<=}2 nm. Near edge X-ray absorption spectroscopy, and soft-X-ray photoelectron spectroscopy, combined with visible and ultra-violet spectroscopic ellipsometry, provide an unambiguous way to distinguish between these two technologically important regimes of nanocrystalline order, yielding significant information on band edge electronic structure, and electronically-active defects.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL) National Synchrotron Light Source
Sponsoring Org.:
Doe - Office Of Science
OSTI Identifier:
930041
Report Number(s):
BNL-80664-2008-JA
TRN: US200822%%1275
DOE Contract Number:
DE-AC02-98CH10886
Resource Type:
Journal Article
Resource Relation:
Journal Name: Microelectronic Engineering; Journal Volume: 84
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION SPECTROSCOPY; COUPLING; CHEMICAL BONDS; CRYSTALS; DEFECTS; DIELECTRIC MATERIALS; ELECTRONIC STRUCTURE; ELLIPSOMETRY; PHOTOELECTRON SPECTROSCOPY; REDUCTION; THIN FILMS; X-RAY PHOTOELECTRON SPECTROSCOPY; X-RAY SPECTROSCOPY; national synchrotron light source

Citation Formats

Lucovsky,G., Seo, H., Lee, S., Fleming, L., Ulrich, M., and Luning, J.. Defect Reduction by Suppression of Pi-bonding Coupling in Nano- and Non-Crystalline High-(medium) -k gate Dielectrics. United States: N. p., 2007. Web. doi:10.1016/j.mee.2007.04.062.
Lucovsky,G., Seo, H., Lee, S., Fleming, L., Ulrich, M., & Luning, J.. Defect Reduction by Suppression of Pi-bonding Coupling in Nano- and Non-Crystalline High-(medium) -k gate Dielectrics. United States. doi:10.1016/j.mee.2007.04.062.
Lucovsky,G., Seo, H., Lee, S., Fleming, L., Ulrich, M., and Luning, J.. Mon . "Defect Reduction by Suppression of Pi-bonding Coupling in Nano- and Non-Crystalline High-(medium) -k gate Dielectrics". United States. doi:10.1016/j.mee.2007.04.062.
@article{osti_930041,
title = {Defect Reduction by Suppression of Pi-bonding Coupling in Nano- and Non-Crystalline High-(medium) -k gate Dielectrics},
author = {Lucovsky,G. and Seo, H. and Lee, S. and Fleming, L. and Ulrich, M. and Luning, J.},
abstractNote = {This paper identifies two-different regimes of nanocrystallinity: (i) thin films with nanocrystallites >3 nm, and (ii) thin films with nanocrystallites {<=}2 nm. Near edge X-ray absorption spectroscopy, and soft-X-ray photoelectron spectroscopy, combined with visible and ultra-violet spectroscopic ellipsometry, provide an unambiguous way to distinguish between these two technologically important regimes of nanocrystalline order, yielding significant information on band edge electronic structure, and electronically-active defects.},
doi = {10.1016/j.mee.2007.04.062},
journal = {Microelectronic Engineering},
number = ,
volume = 84,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2007},
month = {Mon Jan 01 00:00:00 EST 2007}
}
  • This paper identifies two-different regimes of nanocrystallinity: (i) thin films with nanocrystallites >3 nm, and (ii) thin films with nanocrystallites {<=}2 nm. Near edge X-ray absorption spectroscopy, and soft-X-ray photoelectron spectroscopy, combined with visible and ultra-violet spectroscopic ellipsometry, provide an unambiguous way to distinguish between these two technologically important regimes of nanocrystalline order, yielding significant information on band edge electronic structure, and electronically-active defects.
  • No abstract prepared.
  • This paper uses X-ray absorption and vacuum ultra-violet spectroscopic ellipsometry to distinguish between non-crystallinity, and the suppression of Jahn-Teller splittings that identify a scale of order metric, {lambda}{sub 2}, of {approx}3 nm for distinguishing between (i) nanocrystalline-order that can be detected by x-ray diffraction for {lambda}{sub s} > 3-4 nm, and (ii) reduced nanocrystalline order that can be detected by atomic-scale imaging and extended X-ray absorption spectroscopy for {lambda}{sub s} < {approx}2.5 nm. This approach is first applied to elemental transition metal oxides, and then to complex oxides and complex oxide alloys.
  • This paper identifies different length scales, {lambda}{sub s}, for strain-reducing chemical bonding self-organizations in non-crystalline and nano-crystalline thin films. Length scales have been identified through spectroscopic studies, thermal heat flow measurements, and are analyzed by semi-empirical bond-constraint theory (SE-BCT) and symmetry adapted linear combinations (SALC) of atomic states. In both instances, strain-reducing self-organizations result in reduced defect densities that are minimized and enabling for device applications. The length scale for non-crystalline solids extends to at most 1 nm, and more generally to 0.5-0.8 nm; however, there are two different length scales for nano-crystalline films: one is <2.5 nm and ismore » characterized by suppression of longer range ordering required for complex unit cells based on more than one primitive unit cell and the second is >3-3.5 nm and defines a regime where complex unit cells, comprised of two or more primitive unit cells are stabilized and the electronic structure is changed.« less