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Title: Significant dependence of morphology and charge carrier mobility on substrate surface chemistry in high performance polythiophene semiconductor films

Authors:
; ; ; ; ; ;
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL) National Synchrotron Light Source
Sponsoring Org.:
Doe - Office Of Science
OSTI Identifier:
930036
Report Number(s):
BNL-80654-2008-JA
DOE Contract Number:
DE-AC02-98CH10886
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 90
Country of Publication:
United States
Language:
English
Subject:
national synchrotron light source

Citation Formats

Kline,R., Delongchamp, D., Fischer, D., Lin, E., Heeney, M., McCulloch, I., and Toney, M. Significant dependence of morphology and charge carrier mobility on substrate surface chemistry in high performance polythiophene semiconductor films. United States: N. p., 2007. Web. doi:10.1063/1.2472533.
Kline,R., Delongchamp, D., Fischer, D., Lin, E., Heeney, M., McCulloch, I., & Toney, M. Significant dependence of morphology and charge carrier mobility on substrate surface chemistry in high performance polythiophene semiconductor films. United States. doi:10.1063/1.2472533.
Kline,R., Delongchamp, D., Fischer, D., Lin, E., Heeney, M., McCulloch, I., and Toney, M. Mon . "Significant dependence of morphology and charge carrier mobility on substrate surface chemistry in high performance polythiophene semiconductor films". United States. doi:10.1063/1.2472533.
@article{osti_930036,
title = {Significant dependence of morphology and charge carrier mobility on substrate surface chemistry in high performance polythiophene semiconductor films},
author = {Kline,R. and Delongchamp, D. and Fischer, D. and Lin, E. and Heeney, M. and McCulloch, I. and Toney, M.},
abstractNote = {},
doi = {10.1063/1.2472533},
journal = {Applied Physics Letters},
number = ,
volume = 90,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2007},
month = {Mon Jan 01 00:00:00 EST 2007}
}
  • No abstract prepared.
  • The performance of organic field-effect transistors (OFETs) significantly depends on the properties of the interface between the semiconductor and gate dielectric. Here, we study the impact of chemically modified and morphologically controlled dielectrics on the performance of poly(2,5-bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene) (pBTTT) semiconductors. We find that the molecular packing, domain size, and carrier mobility of pBTTT are highly sensitive to dielectric chemistry and dielectric roughness. The large and well-oriented terraced domains that are the origin of pBTTT's high performance can develop well on certain dielectrics, but can be disrupted on others.
  • The structure within crystalline thin films of a high-carrier-mobility polythiophene is studied with complementary characterization methods and first-principles theory. As shown in the figure, two important structural aspects are revealed: (1) a slip in the face-to-face pi-pi packing, which strongly influences carrier mobility, and (2) the interdigitation of highly trans side chains between vertically adjacent lamellae.
  • Using a gradient combinatorial approach, the authors report the effects of temperature on the microstructure and hole mobility of poly(2,5-bis(3-dodecylthiophen-2yl)thieno[3,2-b]thiophene) thin films for application in organic field-effect transistors. The gradient heating revealed a detailed dependence on thermal history. Optimal heat treatment achieved mobilities as high as 0.3 cm{sup 2} V{sup -1} s{sup -1}. Mobility enhancement coincides with an increase in crystal domain size and orientation, all of which occur abruptly at a temperature closely corresponding to a bulk liquid crystal phase transition.
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