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Title: Plastic Deformation of Silicon Between 20 degrees C and 425 Degrees C

Abstract

Mechanical data have been obtained on silicon single crystal under hydrostatic pressure between room temperature and 450 {sup o}C. This temperature domain corresponds to the regime where perfect dislocations control plastic deformation. This was achieved using a D-DIA apparatus in the synchrotron beam of NSLS. Stress strain curves were deduced from X Ray diffraction and sample imaging under 5 GPa and a strain rate of 2.5 10{sup -5} s{sup -1}. Yield stresses as a function of temperature exhibit different temperature dependence when deformation is controlled by perfect dislocations.

Authors:
; ; ; ; ; ;
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL) National Synchrotron Light Source
Sponsoring Org.:
Doe - Office Of Science
OSTI Identifier:
929982
Report Number(s):
BNL-80590-2008-JA
Journal ID: ISSN 1610-1634; TRN: US0806680
DOE Contract Number:
DE-AC02-98CH10886
Resource Type:
Journal Article
Resource Relation:
Journal Name: Physica Status Solidi C; Journal Volume: 4; Journal Issue: 8
Country of Publication:
United States
Language:
English
Subject:
43 PARTICLE ACCELERATORS; BEAMS; DEFORMATION; DIAGRAMS; DISLOCATIONS; FUNCTIONS; HYDROSTATICS; MONOCRYSTALS; NSLS; PLASTICS; SILICON; STRAIN RATE; STRAINS; STRESSES; SYNCHROTRON RADIATION; TEMPERATURE DEPENDENCE; X-RAY DIFFRACTION; national synchrotron light source

Citation Formats

Rabier,J., Renault, P., Eyidi, D., Demenet, J., Chen, J., Couvy, H., and Wang, L.. Plastic Deformation of Silicon Between 20 degrees C and 425 Degrees C. United States: N. p., 2007. Web. doi:10.1002/pssc.200675480.
Rabier,J., Renault, P., Eyidi, D., Demenet, J., Chen, J., Couvy, H., & Wang, L.. Plastic Deformation of Silicon Between 20 degrees C and 425 Degrees C. United States. doi:10.1002/pssc.200675480.
Rabier,J., Renault, P., Eyidi, D., Demenet, J., Chen, J., Couvy, H., and Wang, L.. Mon . "Plastic Deformation of Silicon Between 20 degrees C and 425 Degrees C". United States. doi:10.1002/pssc.200675480.
@article{osti_929982,
title = {Plastic Deformation of Silicon Between 20 degrees C and 425 Degrees C},
author = {Rabier,J. and Renault, P. and Eyidi, D. and Demenet, J. and Chen, J. and Couvy, H. and Wang, L.},
abstractNote = {Mechanical data have been obtained on silicon single crystal under hydrostatic pressure between room temperature and 450 {sup o}C. This temperature domain corresponds to the regime where perfect dislocations control plastic deformation. This was achieved using a D-DIA apparatus in the synchrotron beam of NSLS. Stress strain curves were deduced from X Ray diffraction and sample imaging under 5 GPa and a strain rate of 2.5 10{sup -5} s{sup -1}. Yield stresses as a function of temperature exhibit different temperature dependence when deformation is controlled by perfect dislocations.},
doi = {10.1002/pssc.200675480},
journal = {Physica Status Solidi C},
number = 8,
volume = 4,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2007},
month = {Mon Jan 01 00:00:00 EST 2007}
}