The Effect of Aluminum Nitride-Silicon Carbide Alloy Buffer Layers on the Sublimation Growth of Aluminum Nitride on SiC (0001) Substrates

doi:10.4028/www.scientific.net/MSF.527-529.1497

Title: The Effect of Aluminum Nitride-Silicon Carbide Alloy Buffer Layers on the Sublimation Growth of Aluminum Nitride on SiC (0001) Substrates

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Abstract

No abstract prepared.

Authors:: Gu,Z.; Edgar, J.; Raghothamachar, B.; Dudley, M.; Zhuang, D.; Sitar, Z.

Publication Date:: Sun Jan 01 00:00:00 EST 2006

Research Org.:: Brookhaven National Laboratory (BNL) National Synchrotron Light Source

Sponsoring Org.:: Doe - Office Of Science

OSTI Identifier:: 929845

Report Number(s):: BNL-80409-2008-JA
Journal ID: ISSN 0255-5476; MSFOEP; TRN: US200822%%911

DOE Contract Number:: DE-AC02-98CH10886

Resource Type:: Journal Article

Resource Relation:: Journal Name: Materials Science Forum; Journal Volume: 527-529

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; ALUMINIUM NITRIDES; PHYSICAL VAPOR DEPOSITION; CRYSTAL GROWTH; SILICON CARBIDES; SUBSTRATES; BUFFERS; CATALYTIC EFFECTS; national synchrotron light source

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                    Gu,Z., Edgar, J., Raghothamachar, B., Dudley, M., Zhuang, D., and Sitar, Z. The Effect of Aluminum Nitride-Silicon Carbide Alloy Buffer Layers on the Sublimation Growth of Aluminum Nitride on SiC (0001) Substrates.  United States: N. p., 2006. 
        Web.  doi:10.4028/www.scientific.net/MSF.527-529.1497.

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                    Gu,Z., Edgar, J., Raghothamachar, B., Dudley, M., Zhuang, D., & Sitar, Z. The Effect of Aluminum Nitride-Silicon Carbide Alloy Buffer Layers on the Sublimation Growth of Aluminum Nitride on SiC (0001) Substrates.  United States.  doi:10.4028/www.scientific.net/MSF.527-529.1497.

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                    Gu,Z., Edgar, J., Raghothamachar, B., Dudley, M., Zhuang, D., and Sitar, Z. Sun .  
        "The Effect of Aluminum Nitride-Silicon Carbide Alloy Buffer Layers on the Sublimation Growth of Aluminum Nitride on SiC (0001) Substrates".  United States.  
        doi:10.4028/www.scientific.net/MSF.527-529.1497.

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@article{osti_929845,

  title        = {The Effect of Aluminum Nitride-Silicon Carbide Alloy Buffer Layers on the Sublimation Growth of Aluminum Nitride on SiC (0001) Substrates},

  author       = {Gu,Z. and Edgar, J. and Raghothamachar, B. and Dudley, M. and Zhuang, D. and Sitar, Z.},

  abstractNote = {No abstract prepared.},

  doi          = {10.4028/www.scientific.net/MSF.527-529.1497},

  journal      = {Materials Science Forum},

  number       = ,

  volume       = 527-529,

  place        = {United States},

  year         = {Sun Jan 01 00:00:00 EST 2006},

  month        = {Sun Jan 01 00:00:00 EST 2006}

}

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DOI: 10.4028/www.scientific.net/MSF.527-529.1497

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