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Title: CVD Growth of 3C-SiC on 4H/6H Mesas

Abstract

This article describes growth and characterization of the highest quality reproducible 3C-SiC heteroepitaxial films ever reported. By properly nucleating 3C-SiC growth on top of perfectly on-axis (0001) 4H-SiC mesa surfaces completely free of atomic scale steps and extended defects, growth of 3C-SiC mesa heterofilms completely free of extended crystal defects can be achieved. In contrast, nucleation and growth of 3C-SiC mesa heterofilms on top of 4H-SiC mesas with atomic-scale steps always results in numerous observable dislocations threading through the 3C-SiC epilayer. High-resolution X-ray diffraction (HRXRD) and high resolution cross-sectional transmission electron microscopy (HRXTEM) measurements indicate non-trivial, in-plane, lattice mismatch between the 3C and 4H layers. This mismatch is somewhat relieved in the step-free mesa case via misfit dislocations confined to the 3C/4H interfacial region without dislocations threading into the overlying 3C-SiC layer. These results indicate that the presence or absence of steps at the 3C/4H heteroepitaxial interface critically impacts the quality, defect structure, and relaxation mechanisms of single-crystal heteroepitaxial 3C-SiC films.

Authors:
; ; ; ; ; ; ;
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL) National Synchrotron Light Source
Sponsoring Org.:
Doe - Office Of Science
OSTI Identifier:
929840
Report Number(s):
BNL-80404-2008-JA
Journal ID: ISSN 0948-1907; CVDEFX; TRN: US200822%%1041
DOE Contract Number:  
DE-AC02-98CH10886
Resource Type:
Journal Article
Journal Name:
Chemical Vapor Deposition
Additional Journal Information:
Journal Volume: 12; Journal ID: ISSN 0948-1907
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; DISLOCATIONS; FILMS; GROWTH; INTERFACES; LAYERS; NUCLEATION; RELAXATION; RESOLUTION; SILICON CARBIDES; TRANSMISSION ELECTRON MICROSCOPY; TRIOCTYLPHOSPHINE SULFIDE; X-RAY DIFFRACTION; national synchrotron light source

Citation Formats

Neudeck, P, Trunek, A, Spry, D, Powell, J, Du, H, Skowronski, M, Huang, X, and Dudley, M. CVD Growth of 3C-SiC on 4H/6H Mesas. United States: N. p., 2006. Web. doi:10.1002/cvde.200506460.
Neudeck, P, Trunek, A, Spry, D, Powell, J, Du, H, Skowronski, M, Huang, X, & Dudley, M. CVD Growth of 3C-SiC on 4H/6H Mesas. United States. https://doi.org/10.1002/cvde.200506460
Neudeck, P, Trunek, A, Spry, D, Powell, J, Du, H, Skowronski, M, Huang, X, and Dudley, M. Sun . "CVD Growth of 3C-SiC on 4H/6H Mesas". United States. https://doi.org/10.1002/cvde.200506460.
@article{osti_929840,
title = {CVD Growth of 3C-SiC on 4H/6H Mesas},
author = {Neudeck, P and Trunek, A and Spry, D and Powell, J and Du, H and Skowronski, M and Huang, X and Dudley, M},
abstractNote = {This article describes growth and characterization of the highest quality reproducible 3C-SiC heteroepitaxial films ever reported. By properly nucleating 3C-SiC growth on top of perfectly on-axis (0001) 4H-SiC mesa surfaces completely free of atomic scale steps and extended defects, growth of 3C-SiC mesa heterofilms completely free of extended crystal defects can be achieved. In contrast, nucleation and growth of 3C-SiC mesa heterofilms on top of 4H-SiC mesas with atomic-scale steps always results in numerous observable dislocations threading through the 3C-SiC epilayer. High-resolution X-ray diffraction (HRXRD) and high resolution cross-sectional transmission electron microscopy (HRXTEM) measurements indicate non-trivial, in-plane, lattice mismatch between the 3C and 4H layers. This mismatch is somewhat relieved in the step-free mesa case via misfit dislocations confined to the 3C/4H interfacial region without dislocations threading into the overlying 3C-SiC layer. These results indicate that the presence or absence of steps at the 3C/4H heteroepitaxial interface critically impacts the quality, defect structure, and relaxation mechanisms of single-crystal heteroepitaxial 3C-SiC films.},
doi = {10.1002/cvde.200506460},
url = {https://www.osti.gov/biblio/929840}, journal = {Chemical Vapor Deposition},
issn = {0948-1907},
number = ,
volume = 12,
place = {United States},
year = {2006},
month = {1}
}