Characterization of Bulk Grown GaN and AlN Single Crystal Materials
Journal Article
·
· Journal of Crystal Growth
Sublimation method, spontaneously nucleated as well as seeded on SiC substrates, has been employed for growing AlN bulk crystals. For GaN growth, in addition to the sublimation method using sapphire substrates, ammonothermal growth (analogous to the hydrothermal method) on HVPE GaN seeds is also being used. Thick plates/films of AlN and GaN grown by these methods have been characterized by synchrotron white beam X-ray topography (SWBXT) and high resolution X-ray diffraction (HRXRD). Results from a recent set of growth experiments are discussed.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source
- Sponsoring Organization:
- Doe - Office Of Science
- DOE Contract Number:
- DE-AC02-98CH10886
- OSTI ID:
- 929834
- Report Number(s):
- BNL-80398-2008-JA; JCRGAE; TRN: US0806654
- Journal Information:
- Journal of Crystal Growth, Vol. 287; ISSN 0022-0248
- Country of Publication:
- United States
- Language:
- English
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