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Title: Characterization of Bulk Grown GaN and AlN Single Crystal Materials

Abstract

Sublimation method, spontaneously nucleated as well as seeded on SiC substrates, has been employed for growing AlN bulk crystals. For GaN growth, in addition to the sublimation method using sapphire substrates, ammonothermal growth (analogous to the hydrothermal method) on HVPE GaN seeds is also being used. Thick plates/films of AlN and GaN grown by these methods have been characterized by synchrotron white beam X-ray topography (SWBXT) and high resolution X-ray diffraction (HRXRD). Results from a recent set of growth experiments are discussed.

Authors:
; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL) National Synchrotron Light Source
Sponsoring Org.:
Doe - Office Of Science
OSTI Identifier:
929834
Report Number(s):
BNL-80398-2008-JA
Journal ID: ISSN 0022-0248; JCRGAE; TRN: US0806654
DOE Contract Number:
DE-AC02-98CH10886
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Crystal Growth; Journal Volume: 287
Country of Publication:
United States
Language:
English
Subject:
43 PARTICLE ACCELERATORS; ALUMINIUM NITRIDES; BEAMS; CRYSTALS; CRYSTAL GROWTH; GALLIUM NITRIDES; MATERIALS; MONOCRYSTALS; SAPPHIRE; SILICON CARBIDES; SUBLIMATION; SUBSTRATES; SYNCHROTRON RADIATION; TOPOGRAPHY; X-RAY DIFFRACTION; national synchrotron light source

Citation Formats

Raghothamachar,B., Bai, J., Dudley, M., Dalmau, R., Zhuang, D., Herro, Z., Schlesser, R., Sitar, Z., Wang, B., and Callahan, M.. Characterization of Bulk Grown GaN and AlN Single Crystal Materials. United States: N. p., 2006. Web. doi:10.1016/j.jcrysgro.2005.11.042.
Raghothamachar,B., Bai, J., Dudley, M., Dalmau, R., Zhuang, D., Herro, Z., Schlesser, R., Sitar, Z., Wang, B., & Callahan, M.. Characterization of Bulk Grown GaN and AlN Single Crystal Materials. United States. doi:10.1016/j.jcrysgro.2005.11.042.
Raghothamachar,B., Bai, J., Dudley, M., Dalmau, R., Zhuang, D., Herro, Z., Schlesser, R., Sitar, Z., Wang, B., and Callahan, M.. Sun . "Characterization of Bulk Grown GaN and AlN Single Crystal Materials". United States. doi:10.1016/j.jcrysgro.2005.11.042.
@article{osti_929834,
title = {Characterization of Bulk Grown GaN and AlN Single Crystal Materials},
author = {Raghothamachar,B. and Bai, J. and Dudley, M. and Dalmau, R. and Zhuang, D. and Herro, Z. and Schlesser, R. and Sitar, Z. and Wang, B. and Callahan, M.},
abstractNote = {Sublimation method, spontaneously nucleated as well as seeded on SiC substrates, has been employed for growing AlN bulk crystals. For GaN growth, in addition to the sublimation method using sapphire substrates, ammonothermal growth (analogous to the hydrothermal method) on HVPE GaN seeds is also being used. Thick plates/films of AlN and GaN grown by these methods have been characterized by synchrotron white beam X-ray topography (SWBXT) and high resolution X-ray diffraction (HRXRD). Results from a recent set of growth experiments are discussed.},
doi = {10.1016/j.jcrysgro.2005.11.042},
journal = {Journal of Crystal Growth},
number = ,
volume = 287,
place = {United States},
year = {Sun Jan 01 00:00:00 EST 2006},
month = {Sun Jan 01 00:00:00 EST 2006}
}