Fabrication and performance of nanoscale ultra-smooth programmeddefects for EUV Lithography
We have developed processes for producing ultra-smooth nanoscale programmed substrate defects that have applications in areas such as thin film growth, EUV lithography, and defect inspection. Particle, line, pit, and scratch defects on the substrates between 40 and 140 nm wide 50 to 90 nm high have been successfully produced using e-beam lithograpy and plasma etching in both Silicon and Hydrosilsequioxane films. These programmed defect substrates have several advantages over those produced previously using gold nanoparticles or polystyrene latex spheres--most notably, the ability to precisely locate features and produce recessed as well as bump type features in ultra-smooth films. These programmed defects were used to develop techniques for film defect mitigation and results are discussed.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Director, Office of Science. Office of Basic EnergySciences. Materials Science and Engineering Division
- DOE Contract Number:
- DE-AC02-05CH11231
- OSTI ID:
- 929307
- Report Number(s):
- LBNL-56784-Journal; R&D Project: M50044; BnR: 600301020; TRN: US200813%%177
- Journal Information:
- Journal of Vacuum Science and Technology, Vol. 26, Issue 1; Related Information: Journal Publication Date: 01/2008
- Country of Publication:
- United States
- Language:
- English
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