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Title: Stark Tuning of Donor Electron Spins of Silicon

Abstract

We report Stark shift measurements for {sup 121}Sb donor electron spins in silicon using pulsed electron spin resonance. Interdigitated metal gates on top of a Sb-implanted {sup 28}Si epi-layer are used to apply electric fields. Two Stark effects are resolved: a decrease of the hyperfine coupling between electron and nuclear spins of the donor and a decrease in electron Zeeman g-factor. The hyperfine term prevails at X-band magnetic fields of 0.35T, while the g-factor term is expected to dominate at higher magnetic fields. A significant linear Stark effect is also resolved presumably arising from strain.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
COLLABORATION - PrincetonU.
OSTI Identifier:
928863
Report Number(s):
LBNL-61300
Journal ID: ISSN 0031-9007; PRLTAO; R&D Project: Z41007; BnR: AT5015031; TRN: US200811%%357
DOE Contract Number:  
DE-AC02-05CH11231
Resource Type:
Journal Article
Resource Relation:
Journal Name: Physical Review Letters; Journal Volume: 97; Related Information: Journal Publication Date: Oct. 27,2006
Country of Publication:
United States
Language:
English
Subject:
99; ELECTRIC FIELDS; ELECTRON SPIN RESONANCE; ELECTRONS; MAGNETIC FIELDS; SILICON; STARK EFFECT; TUNING

Citation Formats

Bradbury, Forrest R., Tyryshkin, Alexei M., Sabouret, Guillaume, Bokor, Jeff, Schenkel, Thomas, and Lyon, Stephen A. Stark Tuning of Donor Electron Spins of Silicon. United States: N. p., 2006. Web. doi:10.1103/PhysRevLett.97.176404.
Bradbury, Forrest R., Tyryshkin, Alexei M., Sabouret, Guillaume, Bokor, Jeff, Schenkel, Thomas, & Lyon, Stephen A. Stark Tuning of Donor Electron Spins of Silicon. United States. doi:10.1103/PhysRevLett.97.176404.
Bradbury, Forrest R., Tyryshkin, Alexei M., Sabouret, Guillaume, Bokor, Jeff, Schenkel, Thomas, and Lyon, Stephen A. Thu . "Stark Tuning of Donor Electron Spins of Silicon". United States. doi:10.1103/PhysRevLett.97.176404. https://www.osti.gov/servlets/purl/928863.
@article{osti_928863,
title = {Stark Tuning of Donor Electron Spins of Silicon},
author = {Bradbury, Forrest R. and Tyryshkin, Alexei M. and Sabouret, Guillaume and Bokor, Jeff and Schenkel, Thomas and Lyon, Stephen A.},
abstractNote = {We report Stark shift measurements for {sup 121}Sb donor electron spins in silicon using pulsed electron spin resonance. Interdigitated metal gates on top of a Sb-implanted {sup 28}Si epi-layer are used to apply electric fields. Two Stark effects are resolved: a decrease of the hyperfine coupling between electron and nuclear spins of the donor and a decrease in electron Zeeman g-factor. The hyperfine term prevails at X-band magnetic fields of 0.35T, while the g-factor term is expected to dominate at higher magnetic fields. A significant linear Stark effect is also resolved presumably arising from strain.},
doi = {10.1103/PhysRevLett.97.176404},
journal = {Physical Review Letters},
number = ,
volume = 97,
place = {United States},
year = {Thu Mar 23 00:00:00 EST 2006},
month = {Thu Mar 23 00:00:00 EST 2006}
}