skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Stark Tuning of Donor Electron Spins of Silicon

Abstract

We report Stark shift measurements for {sup 121}Sb donor electron spins in silicon using pulsed electron spin resonance. Interdigitated metal gates on top of a Sb-implanted {sup 28}Si epi-layer are used to apply electric fields. Two Stark effects are resolved: a decrease of the hyperfine coupling between electron and nuclear spins of the donor and a decrease in electron Zeeman g-factor. The hyperfine term prevails at X-band magnetic fields of 0.35T, while the g-factor term is expected to dominate at higher magnetic fields. A significant linear Stark effect is also resolved presumably arising from strain.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
COLLABORATION - PrincetonU.
OSTI Identifier:
928863
Report Number(s):
LBNL-61300
Journal ID: ISSN 0031-9007; PRLTAO; R&D Project: Z41007; BnR: AT5015031; TRN: US200811%%357
DOE Contract Number:
DE-AC02-05CH11231
Resource Type:
Journal Article
Resource Relation:
Journal Name: Physical Review Letters; Journal Volume: 97; Related Information: Journal Publication Date: Oct. 27,2006
Country of Publication:
United States
Language:
English
Subject:
99; ELECTRIC FIELDS; ELECTRON SPIN RESONANCE; ELECTRONS; MAGNETIC FIELDS; SILICON; STARK EFFECT; TUNING

Citation Formats

Bradbury, Forrest R., Tyryshkin, Alexei M., Sabouret, Guillaume, Bokor, Jeff, Schenkel, Thomas, and Lyon, Stephen A. Stark Tuning of Donor Electron Spins of Silicon. United States: N. p., 2006. Web. doi:10.1103/PhysRevLett.97.176404.
Bradbury, Forrest R., Tyryshkin, Alexei M., Sabouret, Guillaume, Bokor, Jeff, Schenkel, Thomas, & Lyon, Stephen A. Stark Tuning of Donor Electron Spins of Silicon. United States. doi:10.1103/PhysRevLett.97.176404.
Bradbury, Forrest R., Tyryshkin, Alexei M., Sabouret, Guillaume, Bokor, Jeff, Schenkel, Thomas, and Lyon, Stephen A. Thu . "Stark Tuning of Donor Electron Spins of Silicon". United States. doi:10.1103/PhysRevLett.97.176404. https://www.osti.gov/servlets/purl/928863.
@article{osti_928863,
title = {Stark Tuning of Donor Electron Spins of Silicon},
author = {Bradbury, Forrest R. and Tyryshkin, Alexei M. and Sabouret, Guillaume and Bokor, Jeff and Schenkel, Thomas and Lyon, Stephen A.},
abstractNote = {We report Stark shift measurements for {sup 121}Sb donor electron spins in silicon using pulsed electron spin resonance. Interdigitated metal gates on top of a Sb-implanted {sup 28}Si epi-layer are used to apply electric fields. Two Stark effects are resolved: a decrease of the hyperfine coupling between electron and nuclear spins of the donor and a decrease in electron Zeeman g-factor. The hyperfine term prevails at X-band magnetic fields of 0.35T, while the g-factor term is expected to dominate at higher magnetic fields. A significant linear Stark effect is also resolved presumably arising from strain.},
doi = {10.1103/PhysRevLett.97.176404},
journal = {Physical Review Letters},
number = ,
volume = 97,
place = {United States},
year = {Thu Mar 23 00:00:00 EST 2006},
month = {Thu Mar 23 00:00:00 EST 2006}
}
  • We report Stark shift measurements for 121Sb donor electronspins in silicon using pulsed electron spin resonance. Interdigitatedmetal gates on top of a Sb-implanted 28Si epi-layer are used to applyelectric fields. Two Stark effects are resolved: a decrease of thehyperfine coupling between electron and nuclear spins of the donor and adecrease in electron Zeeman g-factor. The hyperfine term prevails atX-band magnetic fields of 0.35T, while the g-factor term is expected todominate at higher magnetic fields. A significant linear Stark effect isalso resolved presumably arising from strain.
  • Push–pull organic molecules composed of electron donor diarylamines at the 2- and 2,7-positions of fluorenone exhibit intramolecular charge-transfer behaviour in static absorption and emission spectra. Electrochemical and spectral data combined in a modular electronic analysis model show how the donor HOMO and acceptor LUMO act as major determinants of the frontier molecular orbital energy levels.
  • The Zr 6 nodes of the metal–organic frameworks (MOFs) UiO-66 and UiO-67 are metal oxide clusters of atomic precision and can be used as catalyst supports. The bonding sites on these nodes—that is, hydrogen-bonded H 2O/OH groups on UiO-67 and non-hydrogen-bonded terminal OH groups on UiO-66—were regulated by modulation of the MOF syntheses. Ir(C 2H 4) 2(C 5H 7O 2) complexes reacted with these sites to give site-isolated Ir(C 2H 4) 2 complexes, each anchored to the node by two Ir–Onode bonds. The supported iridium complexes on these sites have been characterized by infrared (IR) and extended X-ray absorption finemore » structure (EXAFS) spectroscopies and density functional theory calculations. The ethylene ligands on iridium are readily replaced by CO, and the ν CO frequencies of the resultant complexes and those of comparable complexes reported elsewhere show that the support electron-donor tendencies increase in the order HY zeolite << UiO-66 < UiO-67 (= NU-1000) < ZrO 2 < MgO. The sharpness of the IR ν CO bands shows that the degree of uniformity of the support bonding sites decreases in the order ZrO 2 ≈ UiO-67 ≈ NU-1000 < MgO < UiO-66 << HY zeolite. The reactivity of supported Ir(CO) 2 complexes with C2H4 to form Ir(C 2H 4)(CO) and Ir(C 2H 4) 2(CO) is influenced by the support electron-donor properties, with the reactivity increasing in the order MgO = ZrO 2 = NU-1000 (not reactive) < UiO-66 < UiO-67 << HY zeolite. Density functional theory calculations characterizing the complexes supported on NU-1000, UiO-66/67, and HY zeolite concur with the use of the calculated ν CO bands as indicators of electron-donor properties of the supported metal catalysts. Our calculations also show that the reactivity of the supported Ir(CO) 2 complexes with C 2H 4 is correlated with the electron-donor properties of the iridium center. Lastly, the supported Ir(C 2H 4) 2 samples are precatalysts for ethylene hydrogenation and ethylene dimerization, with the activity for each reaction increasing with increasing electron-withdrawing strength of the support.« less