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Title: Optical properties of ZnO/ZnS and ZnO/ZnTe heterostructures forphotovoltaic applications

Abstract

Although ZnO and ZnS are abundant, stable, environmentallybenign, their band gap energies (3.44 eV, 3.72 eV) are too large foroptimal photovoltaic efficiency. By using band-corrected pseudopotentialdensity-functional theory calculations, we study how the band gap,opticalabsorption, and carrier localization canbe controlled by formingquantum-well like and nanowire-based heterostructures ofZnO/ZnS andZnO/ZnTe. In the case of ZnO/ZnS core/shell nanowires, which can besynthesized using existing methods, we obtain a band gap of 2.07 eV,which corresponds to a Shockley-Quiesser efficiency limitof 23 percent.Based on these nanowire results, we propose that ZnO/ZnScore/shellnanowires can be used as photovoltaic devices with organic polymersemiconductors as p-channel contacts.

Authors:
; ; ;
Publication Date:
Research Org.:
Ernest Orlando Lawrence Berkeley NationalLaboratory, Berkeley, CA (US)
Sponsoring Org.:
USDOE Director. Office of Science. Basic EnergySciences
OSTI Identifier:
928786
Report Number(s):
LBNL-62616
R&D Project: K11704; BnR: KC0202030; TRN: US200811%%336
DOE Contract Number:  
DE-AC02-05CH11231
Resource Type:
Journal Article
Resource Relation:
Journal Name: Nano Letters; Journal Volume: 7; Journal Issue: 8; Related Information: Journal Publication Date: 2007
Country of Publication:
United States
Language:
English
Subject:
14; 36; ABSORPTION; EFFICIENCY; OPTICAL PROPERTIES; ORGANIC POLYMERS; ZnO

Citation Formats

Schrier, Joshua, Demchenko, Denis O., Wang, Lin-Wang, and Alivisatos,A. Paul. Optical properties of ZnO/ZnS and ZnO/ZnTe heterostructures forphotovoltaic applications. United States: N. p., 2007. Web. doi:10.1021/nl071027k.
Schrier, Joshua, Demchenko, Denis O., Wang, Lin-Wang, & Alivisatos,A. Paul. Optical properties of ZnO/ZnS and ZnO/ZnTe heterostructures forphotovoltaic applications. United States. doi:10.1021/nl071027k.
Schrier, Joshua, Demchenko, Denis O., Wang, Lin-Wang, and Alivisatos,A. Paul. Tue . "Optical properties of ZnO/ZnS and ZnO/ZnTe heterostructures forphotovoltaic applications". United States. doi:10.1021/nl071027k. https://www.osti.gov/servlets/purl/928786.
@article{osti_928786,
title = {Optical properties of ZnO/ZnS and ZnO/ZnTe heterostructures forphotovoltaic applications},
author = {Schrier, Joshua and Demchenko, Denis O. and Wang, Lin-Wang and Alivisatos,A. Paul},
abstractNote = {Although ZnO and ZnS are abundant, stable, environmentallybenign, their band gap energies (3.44 eV, 3.72 eV) are too large foroptimal photovoltaic efficiency. By using band-corrected pseudopotentialdensity-functional theory calculations, we study how the band gap,opticalabsorption, and carrier localization canbe controlled by formingquantum-well like and nanowire-based heterostructures ofZnO/ZnS andZnO/ZnTe. In the case of ZnO/ZnS core/shell nanowires, which can besynthesized using existing methods, we obtain a band gap of 2.07 eV,which corresponds to a Shockley-Quiesser efficiency limitof 23 percent.Based on these nanowire results, we propose that ZnO/ZnScore/shellnanowires can be used as photovoltaic devices with organic polymersemiconductors as p-channel contacts.},
doi = {10.1021/nl071027k},
journal = {Nano Letters},
number = 8,
volume = 7,
place = {United States},
year = {Tue May 01 00:00:00 EDT 2007},
month = {Tue May 01 00:00:00 EDT 2007}
}