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Title: X-ray absorption near edge structure investigation ofvanadium-doped ZnO thin films

Abstract

X-ray absorption near edge structure spectroscopy has beenused to investigate the electronic and atomic structure of vanadium-dopedZnO thin films obtained by reactive plasma. The results show no sign ofmetallic clustering of V atoms, +4 oxidation state of V, 4-foldcoordination of Zn in the films, and a secondary phase (possibly VO2)formation at 15 percent V doping. O K edge spectra show V 3d-O 2p and Zn4d-O 2p hybridization, and suggest that V4+ acts as electron donor thatfills the sigma* band.

Authors:
; ; ; ;
Publication Date:
Research Org.:
COLLABORATION - Surface ScienceLaboratory/KFUPM/Saudi Arabia
OSTI Identifier:
928781
Report Number(s):
LBNL-62447
R&D Project: A580SS; BnR: KC0204016
DOE Contract Number:
DE-AC02-05CH11231
Resource Type:
Journal Article
Resource Relation:
Journal Name: Thin Solid Films; Journal Volume: 515; Related Information: Journal Publication Date: 05/11/2006
Country of Publication:
United States
Language:
English
Subject:
75; advanced light source als

Citation Formats

Faiz, M., Tabet, N., Mekki, A., Mun, B.S., and Hussain, Z. X-ray absorption near edge structure investigation ofvanadium-doped ZnO thin films. United States: N. p., 2006. Web. doi:10.1016/j.tsf.2006.03.044.
Faiz, M., Tabet, N., Mekki, A., Mun, B.S., & Hussain, Z. X-ray absorption near edge structure investigation ofvanadium-doped ZnO thin films. United States. doi:10.1016/j.tsf.2006.03.044.
Faiz, M., Tabet, N., Mekki, A., Mun, B.S., and Hussain, Z. Thu . "X-ray absorption near edge structure investigation ofvanadium-doped ZnO thin films". United States. doi:10.1016/j.tsf.2006.03.044.
@article{osti_928781,
title = {X-ray absorption near edge structure investigation ofvanadium-doped ZnO thin films},
author = {Faiz, M. and Tabet, N. and Mekki, A. and Mun, B.S. and Hussain, Z.},
abstractNote = {X-ray absorption near edge structure spectroscopy has beenused to investigate the electronic and atomic structure of vanadium-dopedZnO thin films obtained by reactive plasma. The results show no sign ofmetallic clustering of V atoms, +4 oxidation state of V, 4-foldcoordination of Zn in the films, and a secondary phase (possibly VO2)formation at 15 percent V doping. O K edge spectra show V 3d-O 2p and Zn4d-O 2p hybridization, and suggest that V4+ acts as electron donor thatfills the sigma* band.},
doi = {10.1016/j.tsf.2006.03.044},
journal = {Thin Solid Films},
number = ,
volume = 515,
place = {United States},
year = {Thu May 11 00:00:00 EDT 2006},
month = {Thu May 11 00:00:00 EDT 2006}
}
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  • No abstract prepared.
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