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Title: InN Nanorods and Epi-layers: Similarities and Differences

Abstract

Transmission electron microscopy was applied to study InN nanorods grown on the a-, c-and r-plane of Al{sub 2}O{sub 3}, and (111) Si substrates by non-catalytic, template-free hydride metal-organic vapor phase epitaxy (H-MOVPE). Single crystal nanorod growth was obtained on all substrates. However, the shape of the nanorods varied depending on the substrate used. For example, nanorods grown on r-plane sapphire and (111) Si have sharp tips. In contrast, growth on a- and c- planes of Al{sub 2}O{sub 3} results in flat tips with clear facets on their sides. The structural quality of these nanorods and their growth polarity are compared to crystalline quality, surface roughness, defects and growth polarity of InN layers grown by MBE on the same planes of Al{sub 2}O{sub 3}.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
Ernest Orlando Lawrence Berkeley NationalLaboratory, Berkeley, CA (US)
Sponsoring Org.:
USDOE Director. Office of Science. Basic EnergySciences
OSTI Identifier:
928438
Report Number(s):
LBNL-62949
R&D Project: 513340; BnR: KC0201030; TRN: US200815%%566
DOE Contract Number:
DE-AC02-05CH11231
Resource Type:
Conference
Resource Relation:
Conference: Microscopy of Semiconducting Materials,Cambridge, UK, 4/1-5, 2007
Country of Publication:
United States
Language:
English
Subject:
36; DEFECTS; HYDRIDES; MICROSCOPY; MONOCRYSTALS; ROUGHNESS; SAPPHIRE; SHAPE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY

Citation Formats

Liliental-Weber, Z., Kryliouk, O., Park, H.J., Mangum, J., Anderson, T., and Schaff, W.. InN Nanorods and Epi-layers: Similarities and Differences. United States: N. p., 2007. Web.
Liliental-Weber, Z., Kryliouk, O., Park, H.J., Mangum, J., Anderson, T., & Schaff, W.. InN Nanorods and Epi-layers: Similarities and Differences. United States.
Liliental-Weber, Z., Kryliouk, O., Park, H.J., Mangum, J., Anderson, T., and Schaff, W.. Fri . "InN Nanorods and Epi-layers: Similarities and Differences". United States. doi:. https://www.osti.gov/servlets/purl/928438.
@article{osti_928438,
title = {InN Nanorods and Epi-layers: Similarities and Differences},
author = {Liliental-Weber, Z. and Kryliouk, O. and Park, H.J. and Mangum, J. and Anderson, T. and Schaff, W.},
abstractNote = {Transmission electron microscopy was applied to study InN nanorods grown on the a-, c-and r-plane of Al{sub 2}O{sub 3}, and (111) Si substrates by non-catalytic, template-free hydride metal-organic vapor phase epitaxy (H-MOVPE). Single crystal nanorod growth was obtained on all substrates. However, the shape of the nanorods varied depending on the substrate used. For example, nanorods grown on r-plane sapphire and (111) Si have sharp tips. In contrast, growth on a- and c- planes of Al{sub 2}O{sub 3} results in flat tips with clear facets on their sides. The structural quality of these nanorods and their growth polarity are compared to crystalline quality, surface roughness, defects and growth polarity of InN layers grown by MBE on the same planes of Al{sub 2}O{sub 3}.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Mar 30 00:00:00 EDT 2007},
month = {Fri Mar 30 00:00:00 EDT 2007}
}

Conference:
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  • No abstract prepared.
  • InN nanorods were grown on a, c-, and r-plane of sapphire and also on Si (111) and GaN (0001) by non-catalytic, template-free hydride metal-organic vapor phase epitaxy and studied by transmission electron microscopy, electron energy loss (EELS) and photoluminescence (PL) at room temperature. These nanocrystals have different shapes and different faceting depending on the substrate used and their crystallographic orientation. EELS measurements have confirmed the high purity of these crystals. The observed PL peak was in the range of 0.9-0.95 eV. The strongest PL intensity was observed for the nanocrystals with the larger diameters.
  • We have used Coherent Bragg Rod Analysis (COBRA) to investigate the atomic structure of a 5.6 nm thick Gd{sub 2}O{sub 3} film epitaxially grown on a (100) GaAs substrate. COBRA is a method to directly obtain the structure of systems periodic in two-dimensions by determining the complex scattering factors along the substrate Bragg rods. The system electron density and atomic structure are obtained by Fourier transforming the complex scattering factors into real space. The results show that the stacking order of the first seven Gd{sub 2}O{sub 3} film layers resembles the stacking order of Ga and As layers in GaAsmore » then changes to the stacking order of cubic bulk Gd{sub 2}O{sub 3}. This behavior is distinctly different from the measured stacking order in a 2.7 nm thick Gd{sub 2}O{sub 3} in which the GaAs stacking order persists throughout the entire film.« less
  • We have used Coherent Bragg Rod Analysis (COBRA) to investigate the atomic structure of a 5.6 nm thick Gd{sub 2}O{sub 3} film epitaxially grown on a (100) GaAs substrate. COBRA is a method to directly obtain the structure of systems periodic in two-dimensions by determining the complex scattering factors along the substrate Bragg rods. The system electron density and atomic structure are obtained by Fourier transforming the complex scattering factors into real space. The results show that the stacking order of the first seven Gd{sub 2}O{sub 3} film layers resembles the stacking order of Ga and As layers in GaAsmore » then changes to the stacking order of cubic bulk Gd{sub 2}O{sub 3}. This behavior is distinctly different from the measured stacking order in a 2.7 nm thick Gd{sub 2}O{sub 3} in which the GaAs stacking order persists throughout the entire film.« less