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Title: Electron emission and defect formation in the interaction of slow,highly charged ions with diamond surfaces

Abstract

We report on electron emission and defect formation in theinteraction between slow (v~;0.3 vBohr) highly charged ions (SHCI) withinsulating (type IIa) and semiconducting (type IIb) diamonds. Electronemission induced by 31Pq+ (q=5 to 13), and 136Xeq+ (q=34 to 44) withkinetic energies of 9 kVxq increase linearly with the ion charge states,reaching over 100 electrons per ion for high xenon charge states withoutsurface passivation of the diamond with hydrogen. Yields from bothdiamond types are up to a factor of two higher then from reference metalsurfaces. Crater like defects with diameters of 25 to 40 nm are formed bythe impact of single Xe44+ ions. High secondary electron yields andsingle ion induced defects enable the formation of single dopant arrayson diamond surfaces.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
COLLABORATION - School of Physics, Universityof the Witwatersrand, Wits 2050, Johannesburg, SouthAfrica
OSTI Identifier:
927325
Report Number(s):
LBNL-62777
R&D Project: 43GW04; TRN: US200811%%96
DOE Contract Number:  
DE-AC02-05CH11231
Resource Type:
Journal Article
Journal Name:
Nuclear Instruments and Methods in Physics ResearchB
Additional Journal Information:
Journal Volume: 256; Related Information: Journal Publication Date: 2007
Country of Publication:
United States
Language:
English
Subject:
75; 74; CHARGE STATES; DEFECTS; DIAMONDS; ELECTRON EMISSION; ELECTRONS; HYDROGEN; KINETICS; PASSIVATION; XENON; diamomd, electron emission, defects, ion beams, highly chargedions

Citation Formats

Sideras-Haddad, E, Shrivastava, S, Rebuli, D B, Persaud, A, Schneider, D H, and Schenkel, T. Electron emission and defect formation in the interaction of slow,highly charged ions with diamond surfaces. United States: N. p., 2006. Web.
Sideras-Haddad, E, Shrivastava, S, Rebuli, D B, Persaud, A, Schneider, D H, & Schenkel, T. Electron emission and defect formation in the interaction of slow,highly charged ions with diamond surfaces. United States.
Sideras-Haddad, E, Shrivastava, S, Rebuli, D B, Persaud, A, Schneider, D H, and Schenkel, T. Wed . "Electron emission and defect formation in the interaction of slow,highly charged ions with diamond surfaces". United States. https://www.osti.gov/servlets/purl/927325.
@article{osti_927325,
title = {Electron emission and defect formation in the interaction of slow,highly charged ions with diamond surfaces},
author = {Sideras-Haddad, E and Shrivastava, S and Rebuli, D B and Persaud, A and Schneider, D H and Schenkel, T},
abstractNote = {We report on electron emission and defect formation in theinteraction between slow (v~;0.3 vBohr) highly charged ions (SHCI) withinsulating (type IIa) and semiconducting (type IIb) diamonds. Electronemission induced by 31Pq+ (q=5 to 13), and 136Xeq+ (q=34 to 44) withkinetic energies of 9 kVxq increase linearly with the ion charge states,reaching over 100 electrons per ion for high xenon charge states withoutsurface passivation of the diamond with hydrogen. Yields from bothdiamond types are up to a factor of two higher then from reference metalsurfaces. Crater like defects with diameters of 25 to 40 nm are formed bythe impact of single Xe44+ ions. High secondary electron yields andsingle ion induced defects enable the formation of single dopant arrayson diamond surfaces.},
doi = {},
journal = {Nuclear Instruments and Methods in Physics ResearchB},
number = ,
volume = 256,
place = {United States},
year = {2006},
month = {5}
}