skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Chemical and magnetic interface properties of tunnel junctionswith co2mnsi/co2fesi multilayer electrode showing large tunnelingmagnetoresistance

Abstract

Transport, as well as chemical and magnetic interface properties of two kinds of magnetic tunnel junctions (MTJs) with Co{sub 2}FeSi electrode, Al-O barrier, and Co-Fe counter electrode, are investigated. For junctions with Co{sub 2}FeSi single-layer electrodes, a tunnel magnetoresistance of up to 52% is found after optimal annealing for an optimal Al thickness of 1.5 nm, whereas the room temperature bulk magnetization of the Co{sub 2}FeSi film reaches only 75% of the expected value. By using a [Co{sub 2}MnSi/Co{sub 2}FeSi]{sub x10} multilayer electrode, the magnetoresistance can be increased to 114%, corresponding to a large spin polarization of 0.74, and the full bulk magnetization is reached. For Al thickness smaller than 1 nm, the TMR of both kinds of MTJs decreases rapidly to zero. On the other hand, for 2- to 3-nm-thick Al, the TMR decreases only slowly. The Al thickness dependence of the TMR is directly correlated to the element-specific magnetic moments of Fe and Co at the Co{sub 2}FeSi/Al-O interface for all Al thickness. Especially, for optimal Al thickness and annealing, the interfacial Fe moment of the single-layer electrode is about 20% smaller than for the multilayer electrode, indicating smaller atomic disorder at the barrier interface for the lattermore » MTJ.« less

Authors:
; ; ; ; ; ; ;
Publication Date:
Research Org.:
COLLABORATION - Department of Physics,Bielefeld University,D- 33501 Bielefeld, Germany
OSTI Identifier:
927323
Report Number(s):
LBNL-62705
TRN: US0803179
DOE Contract Number:  
DE-AC02-05CH11231
Resource Type:
Conference
Resource Relation:
Conference: 10th Joint MMM/Intermag Conference, Baltimore,MD, January 7-11, 2007
Country of Publication:
United States
Language:
English
Subject:
75; ANNEALING; ELECTRODES; MAGNETIC MOMENTS; MAGNETIZATION; MAGNETORESISTANCE; POLARIZATION; SPIN; THICKNESS; TRANSPORT; TUNNELING; advanced light source als

Citation Formats

Schmalhorst, J., Ebke, D., Sacher, M.D., Liu, N., Thomas, A., Reiss, G., Hutten, A., and Arenholz, E. Chemical and magnetic interface properties of tunnel junctionswith co2mnsi/co2fesi multilayer electrode showing large tunnelingmagnetoresistance. United States: N. p., 2007. Web.
Schmalhorst, J., Ebke, D., Sacher, M.D., Liu, N., Thomas, A., Reiss, G., Hutten, A., & Arenholz, E. Chemical and magnetic interface properties of tunnel junctionswith co2mnsi/co2fesi multilayer electrode showing large tunnelingmagnetoresistance. United States.
Schmalhorst, J., Ebke, D., Sacher, M.D., Liu, N., Thomas, A., Reiss, G., Hutten, A., and Arenholz, E. Mon . "Chemical and magnetic interface properties of tunnel junctionswith co2mnsi/co2fesi multilayer electrode showing large tunnelingmagnetoresistance". United States. doi:. https://www.osti.gov/servlets/purl/927323.
@article{osti_927323,
title = {Chemical and magnetic interface properties of tunnel junctionswith co2mnsi/co2fesi multilayer electrode showing large tunnelingmagnetoresistance},
author = {Schmalhorst, J. and Ebke, D. and Sacher, M.D. and Liu, N. and Thomas, A. and Reiss, G. and Hutten, A. and Arenholz, E.},
abstractNote = {Transport, as well as chemical and magnetic interface properties of two kinds of magnetic tunnel junctions (MTJs) with Co{sub 2}FeSi electrode, Al-O barrier, and Co-Fe counter electrode, are investigated. For junctions with Co{sub 2}FeSi single-layer electrodes, a tunnel magnetoresistance of up to 52% is found after optimal annealing for an optimal Al thickness of 1.5 nm, whereas the room temperature bulk magnetization of the Co{sub 2}FeSi film reaches only 75% of the expected value. By using a [Co{sub 2}MnSi/Co{sub 2}FeSi]{sub x10} multilayer electrode, the magnetoresistance can be increased to 114%, corresponding to a large spin polarization of 0.74, and the full bulk magnetization is reached. For Al thickness smaller than 1 nm, the TMR of both kinds of MTJs decreases rapidly to zero. On the other hand, for 2- to 3-nm-thick Al, the TMR decreases only slowly. The Al thickness dependence of the TMR is directly correlated to the element-specific magnetic moments of Fe and Co at the Co{sub 2}FeSi/Al-O interface for all Al thickness. Especially, for optimal Al thickness and annealing, the interfacial Fe moment of the single-layer electrode is about 20% smaller than for the multilayer electrode, indicating smaller atomic disorder at the barrier interface for the latter MTJ.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2007},
month = {Mon Jan 01 00:00:00 EST 2007}
}

Conference:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.

Save / Share: