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Title: Quantum mechanical effects in nanometer field effecttransistors

Authors:
; ; ;
Publication Date:
Research Org.:
COLLABORATION - Chinese Academy ofSciences
Sponsoring Org.:
USDOE Director. Office of Science. Basic EnergySciences
OSTI Identifier:
926703
Report Number(s):
LBNL-60851
R&D Project: K11704; BnR: KC0202030
DOE Contract Number:  
DE-AC02-05CH11231
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 90; Related Information: Journal Publication Date: 2007
Country of Publication:
United States
Language:
English
Subject:
75

Citation Formats

Luo, Jun-Wei, Li, Shu-Shen, Xia, Jian-Bai, and Wang, Lin-Wang. Quantum mechanical effects in nanometer field effecttransistors. United States: N. p., 2007. Web. doi:10.1063/1.2719151.
Luo, Jun-Wei, Li, Shu-Shen, Xia, Jian-Bai, & Wang, Lin-Wang. Quantum mechanical effects in nanometer field effecttransistors. United States. doi:10.1063/1.2719151.
Luo, Jun-Wei, Li, Shu-Shen, Xia, Jian-Bai, and Wang, Lin-Wang. Tue . "Quantum mechanical effects in nanometer field effecttransistors". United States. doi:10.1063/1.2719151.
@article{osti_926703,
title = {Quantum mechanical effects in nanometer field effecttransistors},
author = {Luo, Jun-Wei and Li, Shu-Shen and Xia, Jian-Bai and Wang, Lin-Wang},
abstractNote = {},
doi = {10.1063/1.2719151},
journal = {Applied Physics Letters},
number = ,
volume = 90,
place = {United States},
year = {Tue Jan 09 00:00:00 EST 2007},
month = {Tue Jan 09 00:00:00 EST 2007}
}