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Title: Low-energy ion assisted deposition of epitaxial gallium nitridefilms

Abstract

Epitaxial gallium nitride thin films were grown on c-planeand r-plane sapphire by low-energy ion assisted deposition in high vacuumusing a constricted glow discharge plasma source for the supply ofnitrogen. Instead of preparing a conventional low-temperature bufferlayer, a single-temperature process with initial growth rate ramp wasperformed. The crystallographic structure and texture, defectdistribution, morphology and topography of the grown films wereinvestigated with X-ray diffraction techniques, channeling-RBS, TEM andAFM, respectively. The ion assisted growth procedure results inwell-oriented, epitaxial, single crystalline, wurtzitic GaN films withlow defect densities. The film surfaces are generally smooth, but showeither holes or clusters indicating unbalanced gallium and nitrogenfluxes during growth.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
COLLABORATION - U.Augsburg/Germany
OSTI Identifier:
925404
Report Number(s):
LBNL-45399
DOE Contract Number:  
DE-AC02-05CH11231
Resource Type:
Journal Article
Journal Name:
Nuclear Instruments and methods in Physics Research SectionB
Additional Journal Information:
Journal Volume: 148; Journal Issue: 1; Related Information: Journal Publication Date: 01/02/1999
Country of Publication:
United States
Language:
English

Citation Formats

Gerlach, J.W., Schrupp, D., Volz, K., Zeitler, M., Rauschenbach,B., and Anders, A. Low-energy ion assisted deposition of epitaxial gallium nitridefilms. United States: N. p., 1999. Web.
Gerlach, J.W., Schrupp, D., Volz, K., Zeitler, M., Rauschenbach,B., & Anders, A. Low-energy ion assisted deposition of epitaxial gallium nitridefilms. United States.
Gerlach, J.W., Schrupp, D., Volz, K., Zeitler, M., Rauschenbach,B., and Anders, A. Wed . "Low-energy ion assisted deposition of epitaxial gallium nitridefilms". United States.
@article{osti_925404,
title = {Low-energy ion assisted deposition of epitaxial gallium nitridefilms},
author = {Gerlach, J.W. and Schrupp, D. and Volz, K. and Zeitler, M. and Rauschenbach,B. and Anders, A.},
abstractNote = {Epitaxial gallium nitride thin films were grown on c-planeand r-plane sapphire by low-energy ion assisted deposition in high vacuumusing a constricted glow discharge plasma source for the supply ofnitrogen. Instead of preparing a conventional low-temperature bufferlayer, a single-temperature process with initial growth rate ramp wasperformed. The crystallographic structure and texture, defectdistribution, morphology and topography of the grown films wereinvestigated with X-ray diffraction techniques, channeling-RBS, TEM andAFM, respectively. The ion assisted growth procedure results inwell-oriented, epitaxial, single crystalline, wurtzitic GaN films withlow defect densities. The film surfaces are generally smooth, but showeither holes or clusters indicating unbalanced gallium and nitrogenfluxes during growth.},
doi = {},
journal = {Nuclear Instruments and methods in Physics Research SectionB},
number = 1,
volume = 148,
place = {United States},
year = {1999},
month = {9}
}