skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Electronic structure of carbon nitride thin films studied by X-rayspectroscopy techniques

Authors:
; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
COLLABORATION - LinkopingU./Sweden
OSTI Identifier:
924845
Report Number(s):
LBNL-57740
R&D Project: 458111; BnR: KC0204016
DOE Contract Number:
DE-AC02-05CH11231
Resource Type:
Journal Article
Resource Relation:
Journal Name: Thin Solid Films; Journal Volume: 471; Related Information: Journal Publication Date: 2005
Country of Publication:
United States
Language:
English
Subject:
36; advanced light source als

Citation Formats

Hellgren, Niklas, Guo, Jinghua, Luo, Yi, Sathe, Conny, Agui,Akane, Kashtanov, Stepan, Nordgren, Joseph, Agren, Hans, and Sundgren, Jan-Eric. Electronic structure of carbon nitride thin films studied by X-rayspectroscopy techniques. United States: N. p., 2005. Web. doi:10.1016/j.tsf.2004.03.027.
Hellgren, Niklas, Guo, Jinghua, Luo, Yi, Sathe, Conny, Agui,Akane, Kashtanov, Stepan, Nordgren, Joseph, Agren, Hans, & Sundgren, Jan-Eric. Electronic structure of carbon nitride thin films studied by X-rayspectroscopy techniques. United States. doi:10.1016/j.tsf.2004.03.027.
Hellgren, Niklas, Guo, Jinghua, Luo, Yi, Sathe, Conny, Agui,Akane, Kashtanov, Stepan, Nordgren, Joseph, Agren, Hans, and Sundgren, Jan-Eric. Fri . "Electronic structure of carbon nitride thin films studied by X-rayspectroscopy techniques". United States. doi:10.1016/j.tsf.2004.03.027.
@article{osti_924845,
title = {Electronic structure of carbon nitride thin films studied by X-rayspectroscopy techniques},
author = {Hellgren, Niklas and Guo, Jinghua and Luo, Yi and Sathe, Conny and Agui,Akane and Kashtanov, Stepan and Nordgren, Joseph and Agren, Hans and Sundgren, Jan-Eric},
abstractNote = {},
doi = {10.1016/j.tsf.2004.03.027},
journal = {Thin Solid Films},
number = ,
volume = 471,
place = {United States},
year = {Fri Dec 02 00:00:00 EST 2005},
month = {Fri Dec 02 00:00:00 EST 2005}
}
  • No abstract prepared.
  • No abstract prepared.
  • This study used O K-, Zn L{sub 3}-, Zn K-, and Al K-edges x-ray absorption near-edge structure (XANES) and O K-edge x-ray emission spectroscopy (XES) measurements to investigate the electronic structure of transparent Al-doped ZnO (AZO) thin film conductors. The samples were prepared on glass substrates at a low temperature near 77 K by using a standard RF sputtering method. High-purity Ne (5N) was used as the sputtering gas. The crystallography of AZO thin films gradually transformed from the ZnO wurtize structure to an amorphous structure during sample deposition, which suggests the suitability to grow on flexible substrates, eliminating themore » severe degradation due to fragmentation by repeated bending. The O K- and Zn L{sub 3}-edges XANES spectra of AZO thin films revealed a decrease in the number of both O 2p and Zn 3d unoccupied states when the pressure of Ne was increased from 5 to 100 mTorr. In contrast, Al K-edges XANES spectra showed that the number of unoccupied states of Al 3p increased in conjunction with the pressure of Ne, indicating an electron transfer from Al to O atoms, and suggesting that Al doping increases the negative effective charge of oxygen ions. XES and XANES spectra of O 2p states at the O K-edge also revealed that Al doping not only raised the conduction-band-minimum, but also increased the valence-band-maximum and the band-gap. The results indicate that the reduction in conductivity of AZO thin films is due to the generation of ionic characters, the increase in band-gap, and the decrease in density of unoccupied states of oxygen.« less
  • No abstract prepared.
  • Local structural information for the first two atomic shells surrounding Ga atoms in free standing Al{sub x}Ga{sub 1-x}N alloy films has been obtained by extended x-ray absorption fine structure spectroscopy. For an AlN mole fraction ranging from 0 to 0.6, we found that the first shell Ga-N bond length had only a weak composition dependence, roughly one quarter of that predicted by Vegard's Law. In the second shell, the Ga-Ga bond length was significantly longer than that of Ga-Al ({delta}{approx}0.04-0.065 Aa). A bond-type specific composition dependence was observed for the second shell cation-cation distances. While the composition dependence of themore » Ga-Ga bond length is {approx}70% of that predicted by Vegard's Law, the Ga-Al bond length was essentially composition independent. These results suggested that local strain in Al{sub x}Ga{sub 1-x}N was also accommodated by lattice distortion in the Al cation sublattice. (c) 1999 American Institute of Physics.« less