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Title: Comparison of stability of WSi[x]/SiC and Ni/SiC Schottky rectifiers to high dose gamma-ray irradiation.

Authors:
 [1];  [2];  [2];  [1];  [1]; ;  [1];
  1. (University of Florida, Gainesville, FL)
  2. (Sterling Semiconductor, Tampa, FL)
Publication Date:
Research Org.:
Sandia National Laboratories
Sponsoring Org.:
USDOE
OSTI Identifier:
924229
Report Number(s):
SAND2003-1942J
DOE Contract Number:
AC04-94AL85000
Resource Type:
Journal Article
Resource Relation:
Journal Name: Proposed for publication in Applied Physics Letters.
Country of Publication:
United States
Language:
English

Citation Formats

Schoenfeld, D., MacMillan, M. F., Chung, Gilyong Y., Kim, Jihyun, Pearton, Steve J., Baca, Albert G., Ren, Fan, and Briggs, Ronald D.. Comparison of stability of WSi[x]/SiC and Ni/SiC Schottky rectifiers to high dose gamma-ray irradiation.. United States: N. p., 2003. Web.
Schoenfeld, D., MacMillan, M. F., Chung, Gilyong Y., Kim, Jihyun, Pearton, Steve J., Baca, Albert G., Ren, Fan, & Briggs, Ronald D.. Comparison of stability of WSi[x]/SiC and Ni/SiC Schottky rectifiers to high dose gamma-ray irradiation.. United States.
Schoenfeld, D., MacMillan, M. F., Chung, Gilyong Y., Kim, Jihyun, Pearton, Steve J., Baca, Albert G., Ren, Fan, and Briggs, Ronald D.. 2003. "Comparison of stability of WSi[x]/SiC and Ni/SiC Schottky rectifiers to high dose gamma-ray irradiation.". United States. doi:.
@article{osti_924229,
title = {Comparison of stability of WSi[x]/SiC and Ni/SiC Schottky rectifiers to high dose gamma-ray irradiation.},
author = {Schoenfeld, D. and MacMillan, M. F. and Chung, Gilyong Y. and Kim, Jihyun and Pearton, Steve J. and Baca, Albert G. and Ren, Fan and Briggs, Ronald D.},
abstractNote = {},
doi = {},
journal = {Proposed for publication in Applied Physics Letters.},
number = ,
volume = ,
place = {United States},
year = 2003,
month = 5
}
  • Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V{sub RB}) up to 550V and >2000V, respectively, have been fabricated. The on-state resistance, R{sub ON}, was 6m{Omega}{center_dot} cm{sup 2} and 0.8{Omega}cm{sup 2}, respectively, producing figure-of-merit values for (V{sub RB}){sup 2}/R{sub ON} in the range 5-48 MW{center_dot}cm{sup -2}. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biasesmore » the bulk component dominates. On-state voltages were 3.5V for the 550V diodes and {ge}15 for the 2kV diodes. Reverse recovery times were <0.2{micro}sec for devices switched from a forward current density of {approx}500A{center_dot}cm{sup -2} to a reverse bias of 100V.« less
  • Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V{sub RB}) up to 550 and >2,000V, respectively have been fabricated. The on-state resistance, R{sub ON}, was 6 m{Omega}{center_dot}cm{sup 2} and 0.8{Omega} cm{sup 2}, respectively, producing figure-of-merit values for (V{sub RB}){sup 2}/R{sub ON} in the range 5-48 MW{center_dot}cm{sup {minus}2}. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at highermore » biases the bulk component dominates. On-stage voltages were 3.5 V for the 550 V diodes and {ge}15 for the 2kV diodes. Reverse recovery times were <0.2 {mu}s for devices switched from a forward current density of {approximately}500 A{center_dot}cm{sup {minus}2} to a reverse bias of 100 V.« less
  • The forward-pulse isothermal current–voltage characteristics of 4H-SiC junction barrier Schottky rectifiers (JBSs) with a nominal blocking voltage of 1700 V are measured in the temperature range from–80 to +90°C (193–363 K) up to current densities j of ~5600 A/cm{sup 2} at–80°C and 3000 A/cm{sup 2} at +90°C. In these measurements, the overheating of the structures relative to the ambient temperature, ΔT, did not exceed several degrees. At higher current densities, the effective injection of minority carriers (holes) into the base of the structures is observed, which is accompanied by the appearance of an S-type differential resistance. The pulsed isothermal current–voltagemore » characteristics are also measured at a temperature of 77 K.« less