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Title: Comparison of stability of WSi[x]/SiC and Ni/SiC Schottky rectifiers to high dose gamma-ray irradiation.

Authors:
 [1];  [2];  [2];  [1];  [1]; ;  [1];
  1. (University of Florida, Gainesville, FL)
  2. (Sterling Semiconductor, Tampa, FL)
Publication Date:
Research Org.:
Sandia National Laboratories
Sponsoring Org.:
USDOE
OSTI Identifier:
924229
Report Number(s):
SAND2003-1942J
DOE Contract Number:
AC04-94AL85000
Resource Type:
Journal Article
Resource Relation:
Journal Name: Proposed for publication in Applied Physics Letters.
Country of Publication:
United States
Language:
English

Citation Formats

Schoenfeld, D., MacMillan, M. F., Chung, Gilyong Y., Kim, Jihyun, Pearton, Steve J., Baca, Albert G., Ren, Fan, and Briggs, Ronald D.. Comparison of stability of WSi[x]/SiC and Ni/SiC Schottky rectifiers to high dose gamma-ray irradiation.. United States: N. p., 2003. Web.
Schoenfeld, D., MacMillan, M. F., Chung, Gilyong Y., Kim, Jihyun, Pearton, Steve J., Baca, Albert G., Ren, Fan, & Briggs, Ronald D.. Comparison of stability of WSi[x]/SiC and Ni/SiC Schottky rectifiers to high dose gamma-ray irradiation.. United States.
Schoenfeld, D., MacMillan, M. F., Chung, Gilyong Y., Kim, Jihyun, Pearton, Steve J., Baca, Albert G., Ren, Fan, and Briggs, Ronald D.. Thu . "Comparison of stability of WSi[x]/SiC and Ni/SiC Schottky rectifiers to high dose gamma-ray irradiation.". United States. doi:.
@article{osti_924229,
title = {Comparison of stability of WSi[x]/SiC and Ni/SiC Schottky rectifiers to high dose gamma-ray irradiation.},
author = {Schoenfeld, D. and MacMillan, M. F. and Chung, Gilyong Y. and Kim, Jihyun and Pearton, Steve J. and Baca, Albert G. and Ren, Fan and Briggs, Ronald D.},
abstractNote = {},
doi = {},
journal = {Proposed for publication in Applied Physics Letters.},
number = ,
volume = ,
place = {United States},
year = {Thu May 01 00:00:00 EDT 2003},
month = {Thu May 01 00:00:00 EDT 2003}
}