skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Damage threshold of inorganic solids under free-electron-laser irradiation at 32.5 nm wavelength

Abstract

We exposed samples of B4C, amorphous C, chemical-vapor-deposition (CVD)-diamond C, Si, and SiC to single 25 fs-long pulses of 32.5 nm free-electron-laser radiation at fluences of up to 2.2 J/cm{sup 2}. The samples were chosen as candidate materials for x-ray free electron laser (XFEL) optics. We found that the threshold for surface-damage is on the order of the fluence required for thermal melting. For larger fluences, the crater depths correspond to temperatures on the order of the critical temperature, suggesting that the craters are formed by two-phase vaporization [1]. XFELs have the promise of producing extremely high-intensity ultrashort pulses of coherent, monochromatic radiation in the 1 to 10 keV regime. The expected high output fluence and short pulse duration pose significant challenges to the optical components, including radiation damage. It has not been possible to obtain direct experimental verification of the expected damage thresholds since appropriate x-ray sources are not yet available. FLASH has allowed us to study the interaction of high-fluence short-duration photon pulses with materials at the shortest wavelength possible to date. With these experiments, we have come closer to the extreme conditions expected in XFEL-matter interaction scenarios than previously possible.

Authors:
; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; more »; ; ; ; ; ; ; ; ; ; « less
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
924009
Report Number(s):
UCRL-TR-236970
TRN: US200806%%458
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUMM MECHANICS, GENERAL PHYSICS; CHEMICAL VAPOR DEPOSITION; CRITICAL TEMPERATURE; EVAPORATION; FREE ELECTRON LASERS; IRRADIATION; MELTING; MONOCHROMATIC RADIATION; OPTICS; PHOTONS; RADIATIONS; VERIFICATION; WAVELENGTHS; X-RAY SOURCES

Citation Formats

Hau-Riege, S, London, R A, Bionta, R M, McKernan, M A, Baker, S L, Krzywinski, J, Sobierajski, R, Nietubyc, R, Pelka, J B, Jurek, M, Klinger, D, Juha, L, Chalupsky, J, Cihelka, J, Hajkova, V, Koptyaev, S, Velyhan, A, Krasa, J, Kuba, J, Tiedtke, K, Toleikis, S, Tschentscher, T, Wabnitz, H, Bergh, M, Caleman, C, Sokolowski-Tinten, K, Stojanovic, N, Zastrau, U, Tronnier, A, and Meyer-ter-Vehn, J. Damage threshold of inorganic solids under free-electron-laser irradiation at 32.5 nm wavelength. United States: N. p., 2007. Web. doi:10.2172/924009.
Hau-Riege, S, London, R A, Bionta, R M, McKernan, M A, Baker, S L, Krzywinski, J, Sobierajski, R, Nietubyc, R, Pelka, J B, Jurek, M, Klinger, D, Juha, L, Chalupsky, J, Cihelka, J, Hajkova, V, Koptyaev, S, Velyhan, A, Krasa, J, Kuba, J, Tiedtke, K, Toleikis, S, Tschentscher, T, Wabnitz, H, Bergh, M, Caleman, C, Sokolowski-Tinten, K, Stojanovic, N, Zastrau, U, Tronnier, A, & Meyer-ter-Vehn, J. Damage threshold of inorganic solids under free-electron-laser irradiation at 32.5 nm wavelength. United States. https://doi.org/10.2172/924009
Hau-Riege, S, London, R A, Bionta, R M, McKernan, M A, Baker, S L, Krzywinski, J, Sobierajski, R, Nietubyc, R, Pelka, J B, Jurek, M, Klinger, D, Juha, L, Chalupsky, J, Cihelka, J, Hajkova, V, Koptyaev, S, Velyhan, A, Krasa, J, Kuba, J, Tiedtke, K, Toleikis, S, Tschentscher, T, Wabnitz, H, Bergh, M, Caleman, C, Sokolowski-Tinten, K, Stojanovic, N, Zastrau, U, Tronnier, A, and Meyer-ter-Vehn, J. Mon . "Damage threshold of inorganic solids under free-electron-laser irradiation at 32.5 nm wavelength". United States. https://doi.org/10.2172/924009. https://www.osti.gov/servlets/purl/924009.
@article{osti_924009,
title = {Damage threshold of inorganic solids under free-electron-laser irradiation at 32.5 nm wavelength},
author = {Hau-Riege, S and London, R A and Bionta, R M and McKernan, M A and Baker, S L and Krzywinski, J and Sobierajski, R and Nietubyc, R and Pelka, J B and Jurek, M and Klinger, D and Juha, L and Chalupsky, J and Cihelka, J and Hajkova, V and Koptyaev, S and Velyhan, A and Krasa, J and Kuba, J and Tiedtke, K and Toleikis, S and Tschentscher, T and Wabnitz, H and Bergh, M and Caleman, C and Sokolowski-Tinten, K and Stojanovic, N and Zastrau, U and Tronnier, A and Meyer-ter-Vehn, J},
abstractNote = {We exposed samples of B4C, amorphous C, chemical-vapor-deposition (CVD)-diamond C, Si, and SiC to single 25 fs-long pulses of 32.5 nm free-electron-laser radiation at fluences of up to 2.2 J/cm{sup 2}. The samples were chosen as candidate materials for x-ray free electron laser (XFEL) optics. We found that the threshold for surface-damage is on the order of the fluence required for thermal melting. For larger fluences, the crater depths correspond to temperatures on the order of the critical temperature, suggesting that the craters are formed by two-phase vaporization [1]. XFELs have the promise of producing extremely high-intensity ultrashort pulses of coherent, monochromatic radiation in the 1 to 10 keV regime. The expected high output fluence and short pulse duration pose significant challenges to the optical components, including radiation damage. It has not been possible to obtain direct experimental verification of the expected damage thresholds since appropriate x-ray sources are not yet available. FLASH has allowed us to study the interaction of high-fluence short-duration photon pulses with materials at the shortest wavelength possible to date. With these experiments, we have come closer to the extreme conditions expected in XFEL-matter interaction scenarios than previously possible.},
doi = {10.2172/924009},
url = {https://www.osti.gov/biblio/924009}, journal = {},
number = ,
volume = ,
place = {United States},
year = {2007},
month = {12}
}