A Chemical Approach to 3-D Lithographic Patterning of Si and GeNanocrystals
Abstract
Ion implantation into silica followed by thermal annealingis an established growth method for Si and Ge nanocrystals. Wedemonstrate that growth of Group IV semiconductor nanocrystals can besuppressed by co-implantation of oxygen prior to annealing. For Sinanocrystals, at low Si/O dose ratios, oxygen co-implantation leads to areduction of the average nanocrystal size and a blue-shift of thephotoluminescence emission energy. For both Si and Ge nanocrystals, atlarger Si/O or Ge/O dose ratios, the implanted specie is oxidized andnanocrystals do not form. This chemical deactivation was utilized toachieve patterned growth of Si and Ge nanocrystals. Si was implanted intoa thin SiO2 film on a Si substrate followed by oxygen implantationthrough an electron beam lithographically defined stencil mask. Thermalannealing of the co-implanted structure yields two-dimensionallypatterned growth of Si nanocrystals under the masked regions. We applieda previously developed process to obtain exposed nanocrystals byselective HF etching of the silica matrix to these patterned structures.Atomic force microscopy (AFM) of etched structures revealed that exposednanocrystals are not laterally displaced from their original positionsduring the etching process. Therefore, this process provides a means ofachieving patterned structures of exposed nanocrystals. The possibilitiesfor scaling this chemical-based lithography process to smaller featuresand for extending it to 3-D patterning is discussed.
- Authors:
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE Director. Office of Science. Basic EnergySciences
- OSTI Identifier:
- 922997
- Report Number(s):
- LBNL-59198
R&D Project: 513310; BnR: KC0201030; TRN: US200804%%829
- DOE Contract Number:
- DE-AC02-05CH11231
- Resource Type:
- Conference
- Resource Relation:
- Conference: Materials Research Society 2005 Fall Meeting,Boston, MA, November 28-December 2, 2005
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36; ANNEALING; ATOMIC FORCE MICROSCOPY; DEACTIVATION; ELECTRON BEAMS; ETCHING; ION IMPLANTATION; OXYGEN; PHOTOLUMINESCENCE; SILICA; SUBSTRATES
Citation Formats
Sharp, I D, Xu, Q, Yi, D O, Liao, C Y, Ager, III, J W, Beeman, J W, Yu, K M, Robinson, J T, Dubon, O D, Chrzan, D C, and Haller, E E. A Chemical Approach to 3-D Lithographic Patterning of Si and GeNanocrystals. United States: N. p., 2005.
Web.
Sharp, I D, Xu, Q, Yi, D O, Liao, C Y, Ager, III, J W, Beeman, J W, Yu, K M, Robinson, J T, Dubon, O D, Chrzan, D C, & Haller, E E. A Chemical Approach to 3-D Lithographic Patterning of Si and GeNanocrystals. United States.
Sharp, I D, Xu, Q, Yi, D O, Liao, C Y, Ager, III, J W, Beeman, J W, Yu, K M, Robinson, J T, Dubon, O D, Chrzan, D C, and Haller, E E. 2005.
"A Chemical Approach to 3-D Lithographic Patterning of Si and GeNanocrystals". United States. https://www.osti.gov/servlets/purl/922997.
@article{osti_922997,
title = {A Chemical Approach to 3-D Lithographic Patterning of Si and GeNanocrystals},
author = {Sharp, I D and Xu, Q and Yi, D O and Liao, C Y and Ager, III, J W and Beeman, J W and Yu, K M and Robinson, J T and Dubon, O D and Chrzan, D C and Haller, E E},
abstractNote = {Ion implantation into silica followed by thermal annealingis an established growth method for Si and Ge nanocrystals. Wedemonstrate that growth of Group IV semiconductor nanocrystals can besuppressed by co-implantation of oxygen prior to annealing. For Sinanocrystals, at low Si/O dose ratios, oxygen co-implantation leads to areduction of the average nanocrystal size and a blue-shift of thephotoluminescence emission energy. For both Si and Ge nanocrystals, atlarger Si/O or Ge/O dose ratios, the implanted specie is oxidized andnanocrystals do not form. This chemical deactivation was utilized toachieve patterned growth of Si and Ge nanocrystals. Si was implanted intoa thin SiO2 film on a Si substrate followed by oxygen implantationthrough an electron beam lithographically defined stencil mask. Thermalannealing of the co-implanted structure yields two-dimensionallypatterned growth of Si nanocrystals under the masked regions. We applieda previously developed process to obtain exposed nanocrystals byselective HF etching of the silica matrix to these patterned structures.Atomic force microscopy (AFM) of etched structures revealed that exposednanocrystals are not laterally displaced from their original positionsduring the etching process. Therefore, this process provides a means ofachieving patterned structures of exposed nanocrystals. The possibilitiesfor scaling this chemical-based lithography process to smaller featuresand for extending it to 3-D patterning is discussed.},
doi = {},
url = {https://www.osti.gov/biblio/922997},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Dec 12 00:00:00 EST 2005},
month = {Mon Dec 12 00:00:00 EST 2005}
}