Method of produce ultra-low friction carbon films
Patent
·
OSTI ID:921345
- Naperville, IL
- Downers Grove, IL
- Istanbul, TK
- Lemont, IL
A method and article of manufacture of amorphous diamond-like carbon. The method involves providing a substrate in a chamber, providing a mixture of a carbon containing gas and hydrogen gas with the mixture adjusted such that the atomic molar ratio of carbon to hydrogen is less than 0.3, including all carbon atoms and all hydrogen atoms in the mixture. A plasma is formed of the mixture and the amorphous diamond-like carbon film is deposited on the substrate. To achieve optimum bonding an intervening bonding layer, such as Si or SiO.sub.2, can be formed from SiH.sub.4 with or without oxidation of the layer formed.
- Research Organization:
- Argonne National Laboratory (ANL), Argonne, IL
- Sponsoring Organization:
- United States Department of Energy
- DOE Contract Number:
- W-31109-ENG-38;
- Assignee:
- Argonne National Laboratory (Argonne, IL)
- Patent Number(s):
- 6,548,173
- Application Number:
- 09/808,632
- OSTI ID:
- 921345
- Country of Publication:
- United States
- Language:
- English
The effect of TiN interlayers on the indentation behavior of diamond-like carbon films on alloy and compound substrates
|
journal | March 1994 |
Effect of source gas and deposition method on friction and wear performance of diamondlike carbon films
|
journal | October 1997 |
Interpretation of Raman spectra of disordered and amorphous carbon
|
journal | May 2000 |
Processing and characterisation of diamondlike carbon films
|
journal | January 1997 |
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