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Title: TEM studies of laterally overgrown GaN layers grown on non-polarsubstrates

Abstract

Transmission electron microscopy (TEM) was used to study pendeo-epitaxial GaN layers grown on polar and non-polar 4H SiC substrates. The structural quality of the overgrown layers was evaluated using a number of TEM methods. Growth of pendeo-epitaxial layers on polar substrates leads to better structural quality of the overgrown areas, however edge-on dislocations are found at the meeting fronts of two wings. Some misorientation between the 'seed' area and wing area was detected by Convergent Beam Electron Diffraction. Growth of pendeo-epitaxial layers on non-polar substrates is more difficult. Two wings on the opposite site of the seed area grow in two different polar directions with different growth rates. Most dislocations in a wing grown with Ga polarity are 10 times wider than wings grown with N-polarity making coalescence of these layers difficult. Most dislocations in a wing grown with Ga polarity bend in a direction parallel to the substrate, but some of them also propagate to the sample surface. Stacking faults formed on the c-plane and prismatic plane occasionally were found. Some misorientation between the wings and seed was detected using Large Angle Convergent Beam Diffraction.

Authors:
; ;
Publication Date:
Research Org.:
Ernest Orlando Lawrence Berkeley NationalLaboratory, Berkeley, CA (US)
Sponsoring Org.:
USDOE; AFOSR ISSA 06NE001
OSTI Identifier:
920343
Report Number(s):
LBNL-60794
R&D Project: M70022; BnR: 400403109; TRN: US200818%%1145
DOE Contract Number:
DE-AC02-05CH11231
Resource Type:
Conference
Resource Relation:
Conference: Photonic West SPIE-The International Society forOptical Engineering, San Jose, CA, 1/22-1-16/06
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; COALESCENCE; DIFFRACTION; DISLOCATIONS; ELECTRON DIFFRACTION; SEEDS; STACKING FAULTS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Liliental-Weber, Z., Ni, X., and Morkoc, H. TEM studies of laterally overgrown GaN layers grown on non-polarsubstrates. United States: N. p., 2006. Web.
Liliental-Weber, Z., Ni, X., & Morkoc, H. TEM studies of laterally overgrown GaN layers grown on non-polarsubstrates. United States.
Liliental-Weber, Z., Ni, X., and Morkoc, H. Thu . "TEM studies of laterally overgrown GaN layers grown on non-polarsubstrates". United States. doi:. https://www.osti.gov/servlets/purl/920343.
@article{osti_920343,
title = {TEM studies of laterally overgrown GaN layers grown on non-polarsubstrates},
author = {Liliental-Weber, Z. and Ni, X. and Morkoc, H.},
abstractNote = {Transmission electron microscopy (TEM) was used to study pendeo-epitaxial GaN layers grown on polar and non-polar 4H SiC substrates. The structural quality of the overgrown layers was evaluated using a number of TEM methods. Growth of pendeo-epitaxial layers on polar substrates leads to better structural quality of the overgrown areas, however edge-on dislocations are found at the meeting fronts of two wings. Some misorientation between the 'seed' area and wing area was detected by Convergent Beam Electron Diffraction. Growth of pendeo-epitaxial layers on non-polar substrates is more difficult. Two wings on the opposite site of the seed area grow in two different polar directions with different growth rates. Most dislocations in a wing grown with Ga polarity are 10 times wider than wings grown with N-polarity making coalescence of these layers difficult. Most dislocations in a wing grown with Ga polarity bend in a direction parallel to the substrate, but some of them also propagate to the sample surface. Stacking faults formed on the c-plane and prismatic plane occasionally were found. Some misorientation between the wings and seed was detected using Large Angle Convergent Beam Diffraction.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Jan 05 00:00:00 EST 2006},
month = {Thu Jan 05 00:00:00 EST 2006}
}

Conference:
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